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    2T2 TRANSISTOR Search Results

    2T2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2T2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


    OCR Scan     		PDF J308/309/310 -TO-92 MCD212 bbS3831

    Untitled

    Abstract: No abstract text available
    Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.


    OCR Scan     		PDF BFR93A BFT93.

    transistor 667

    Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
    Text: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2


    OCR Scan     		PDF BFR93A BFT93. transistor 667 BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor

    D7821

    Abstract: PD78P218 1NTC0 83YL-9181A D78218 p54a TI427 1NTC D78218A P218A
    Text: • L.427525 0043103 2T2 * N E C E NEC NEC Electronics Inc. pPD78218A Family pPD78217A/218A/P218A 8-Bit, K-Series Microcontrollers With A/D Converter, Real-Time Output Ports _ J u ly 1993 Description ^ Pin com patible w ith ¿/PD78214 family The ¡uPD78217A, /JPD78218A, and /JPD78P218A are


    OCR Scan     		PDF uPD78218A uPD78217A uPD78P218A /PD78214 16-bit aiPD78218A/P218A) PD78217A) /JPD78218A/P218A pPD78217A D7821 PD78P218 1NTC0 83YL-9181A D78218 p54a TI427 1NTC D78218A P218A

    etg36 040d

    Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
    Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.


    OCR Scan     		PDF ETG36-040C ETG36-040D O-220F ET375 2SC2930 etg36 040d diode b6 k 450 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833

    2SD1071

    Abstract: 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916 ETG36-040C
    Text: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.


    OCR Scan     		PDF ETG36-040C ETG36-040D O-220F ET375 2SC2930 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916

    Untitled

    Abstract: No abstract text available
    Text: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6


    OCR Scan     		PDF BCX19 BCX20

    BCX19

    Abstract: lem HA BCX20
    Text: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6


    OCR Scan     		PDF BCX19 BCX20 BCX19 lem HA BCX20

    Untitled

    Abstract: No abstract text available
    Text: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS


    OCR Scan     		PDF IFN5911, IFN5912 FN5911 IFN9912 NJ30L 00G07b7

    STP19N05L

    Abstract: STP19N06L
    Text: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STP19N05L STP19N06L STP19N05L STP19N06L O-220

    PHN105

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor P H N 105 FEATURES DESCRIPTION • High speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic S 0 8 SOT96-1 package. • No secondary breakdown


    OCR Scan     		PDF PHN105 OT96-1) 7110fl2Li 711002t PHN105

    3.5b zener diode

    Abstract: diode so3 NDB6050L NDP6050L
    Text: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF NDP6050L/ NDB6050L ne8-59 00402bE bSD1130 D0M02b3 3.5b zener diode diode so3 NDB6050L NDP6050L

    ODD1173

    Abstract: FF200R06KF2 FF200R06KF FF500 15fis Scans-0031044 FF200R06
    Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 0,16 DC, pro Zweig / per arm 0,03 pro B a u ste in /p e r module 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties V CES Maximum rated values


    OCR Scan     		PDF 00R600 FF20DN FF500 ODD1173 FF200R06KF2 FF200R06KF 15fis Scans-0031044 FF200R06

    FZJ 125

    Abstract: transistor z5t STV10NA40 fzj 155
    Text: SCS-THOMSON M œ m iO T is lin e i S T V 10NA 40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STV10NA40 • . . . . . . Vdss RüS on Id 500 V < 0.55 n 10 A TYPICAL RDS(on) = 0.46 D ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


    OCR Scan     		PDF STV10NA40 STV10NA40 D73bSfl FZJ 125 transistor z5t fzj 155

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 DC, pro Zweig / per arm 0,16 pro B au stein / per module 0,03 RthCK pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties


    OCR Scan     		PDF FF500

    Untitled

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF

    Xr 1075

    Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320
    Text: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic


    OCR Scan     		PDF BFG92A; BFG92A/X; BFG92A/XR BFG92 OT143 BFG92A BFG92A/X MSB014 OT143. Xr 1075 BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320

    TC74HC4538P

    Abstract: 2T2 transistor
    Text: TC74HC4538P/F TC 7 4 H C 4 5 3 8 P /F DUAL R E T R IG G E R A B LE MONOSTABLE M U LTIV IBR A TO R The TC74HC4538 is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    OCR Scan     		PDF TC74HC4538P/F TC74HC4538 TC74HC4538P 2T2 transistor

    BA4510F

    Abstract: No abstract text available
    Text: BA451 OF Dual, high slew rate, operational amplifiers BA4510F is a monolithic IC that consists of two high slew-rate operational amplifiers. Features Dimensions Units : mm • • available in SOP8 package wide power supply voltage range (single power supply, 2 V ~ 7 V; dual


    OCR Scan     		PDF BA451 BA4510F BA4510F G012332 0D1E333

    4538A

    Abstract: Diode dx 2A 74HC4538A
    Text: TOSHIBA TC74HC4538AP/AF/AFN Dual Monostable Multivibrator The TC74HC 4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fa b rica te d w ith silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan     		PDF TC74HC4538AP/AF/AFN TC74HC Duty/100 TC74HC/HCT 4538A Diode dx 2A 74HC4538A

    IC 4538

    Abstract: 4538 ic 4538 equivalent CD 4538 PIN DIAGRAM IC CD 4538 74HC4538 CMOS 4538 series circuits for 4538 4538M cmos 4538
    Text: r z 7 Ä 7# S G S -T H O M S O N M 0 » d H I O T « i M74H C 4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR HIGHSPEED = 25 ns (TYP. AT Vcc = 5 V LOW POWER DISSIPATION STANDBYSTATE Ice = 4|iA (MAX.) ATT a = 25 "C ACTIVE STATE Ice = 200 jjA (TYP.) AT Vcc = 5 V


    OCR Scan     		PDF 4538B 4538F1R 4538M Duty/100 001/J 74HC4538 IC 4538 4538 ic 4538 equivalent CD 4538 PIN DIAGRAM IC CD 4538 74HC4538 CMOS 4538 series circuits for 4538 cmos 4538

    T3D 67 diode

    Abstract: Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77
    Text: f Z 7 S G S -T H O M S O N Ä 7 # ¡ i» œ m O T o « S M 54HC4538 M 74HC4538 % DUAL RETRIGGERABLE MONOSTABLE M ULTIVIBRATOR • HIGHSPEED tpD = 25 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION STANDBY STATE lcc = 4|iA (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 |iA (TYP.) AT Vcc = 5 V


    OCR Scan     		PDF 54HC4538 74HC4538 4538B Duty/100 M54/M74HC4538 0DSS332 DG5S333 T3D 67 diode Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77

    C4538

    Abstract: 2t1-2t2 74hci 74HC4538 4538B 54HC 74HC M54HC123 M54HC4538 M74HC123
    Text: M 54HC4538 M 74H C 4538 / T T S G S -T H O M S O N * 7 # . rao jä inieT[is«MKg§ DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR i HIGH SPEED tpD = 27 ns TYP at VCc = 5V i LOW POWER DISSIPATION STANDBY STATE lCC = 4 ¿¿A (MAX.) at TA = 25°C ACTIVE STATE lcc = 200 /tA (TYP) at VCc = 5V


    OCR Scan     		PDF M54HC4538 M74HC4538 120ns 4538B M54/74HC4538 M54/74H C4538 C4538 2t1-2t2 74hci 74HC4538 4538B 54HC 74HC M54HC123 M54HC4538 M74HC123

    4538B

    Abstract: Transistor 2Tz 2T2 transistor 74HC4538 M54HC4538 M54HC4538F1R M74HC4538 M74HC4538B1R M74HC4538C1R M74HC4538M1R
    Text: r z r z S G S -T H O M S O N M54HC4538 ^ 7 # MommiOTTECTOOS_ M74HC4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR HIGH SPEED = 25 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION STANDBY STATE Ice = 4 ^A (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 nA (TYP.) AT Vcc = 5 V


    OCR Scan     		PDF M54HC4538 M74HC4538 10LSTTL 4538B M54HC4538F1R M74HC4538M1R M74HC4538B1R M74HC4538C1R DD5S332 M54/M74HC4538 4538B Transistor 2Tz 2T2 transistor 74HC4538 M54HC4538 M74HC4538 M74HC4538C1R