Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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bb53331
OT223
BUK581-60A
bbS3831
D030fl35
OT223.
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS /DISC RE TE bTE D • htjS3T31 DOSOTOD TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.
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htjS3T31
O220AB
BUK854-800A
bbS3831
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Untitled
Abstract: No abstract text available
Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections
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J308/309/310
-TO-92
MCD212
bbS3831
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors b bS 3T 31 0D 3240D 22fl M A P V Product specification BGY587B CATV amplifier module N AMER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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3240D
BGY587B
PINNING-SOT115C
DIN45004B;
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Untitled
Abstract: No abstract text available
Text: N AP1ER PHILIPS/PISCRETE b'lE D bb53T31 D03D675 T73 * A P X Product Specification Philips semiconductors PowerMOS transistor BUK638-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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bb53T31
D03D675
BUK638-500B
bb53331
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb 5 3 S 31 0 0 2 T 2 b 7 72A H APX Product specification UHF push-pull power transistor BLV948 N AMER PHILIPS/DISCRETE FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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BLV948
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BT 1840 PA
Abstract: No abstract text available
Text: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure
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bb53T31
BFG67;
BFG67/X;
BFG67R;
BFG67/XR
BFG67
BFG67/X
BFG67
OT143
BFG67)
BT 1840 PA
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y1 npn
Abstract: 538 NPN transistor
Text: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION
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bbS3R31
0Q2Mb37
BF547
BF547
y1 npn
538 NPN transistor
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b b S B ' i a i □QSt17Q5 2flb WAPX b'JE D X BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized
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QSt17Q5
BLY89C
Z77109
7Z7710S
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Untitled
Abstract: No abstract text available
Text: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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BLF348
OT262
bbS3831
UCB237
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbSBTBl 0025104 251 H A P X Product specification PNP 1 GHz switching transistor ^— ^ “ N AUER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN 1 The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its
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PMBTH81
PMBTH81
PMBTH10.
MRA567
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