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    303DB Price and Stock

    Diodes Incorporated PAM8303DBYC

    IC AMP CLASS D MONO 3W 8DFN
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    DigiKey PAM8303DBYC Reel
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    Avnet Americas PAM8303DBYC Reel 3,000
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    TME PAM8303DBYC 1
    • 1 $0.757
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    • 100 $0.355
    • 1000 $0.332
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    Avnet Silica PAM8303DBYC 18 Weeks 3,000
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    Vishay Dale RN55C1303DB14

    RES 130K OHM 1/8W .5% AXIAL
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    DigiKey RN55C1303DB14 Bulk 100
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    Vishay Dale RN55C1303DBSL

    RES 130K OHM 1/8W .5% AXIAL
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    DigiKey RN55C1303DBSL Bulk 100
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    Vishay Dale RN60C3303DB14

    RES 330K OHM 1/4W .5% AXIAL
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    DigiKey RN60C3303DB14 Bulk 1,000
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    YAGEO Corporation 9T08052A4303DBHFT

    RES SMD 430K OHM 0.5% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 9T08052A4303DBHFT Reel 5,000
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    Find more 303DB price and stock on Findchips.com

    303DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    quadrant photodiode rca

    Abstract: No abstract text available
    Text: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .


    OCR Scan     		PDF 303Dbl0 GDQ0143 C30927E C30927E-03 C30927E-02 C30927E-01 VP-104 C30927E-01, C30927E-02, C30927E-03 quadrant photodiode rca

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANAD A/O PTOELEK IO D • 303DblQ DOODObS «Ì22 H C A N A C86051E Series GaAIAs Injection Lasers T -w -ù s Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors


    OCR Scan     		PDF 303DblQ C86051E

    C30971

    Abstract: RCA H 515 PREAMPLIFIER TRANSIMPEDANCE optic fet 090Q C30997-010 C30997-250 C30997-XXXQC-YY
    Text: E G v t & G/CANADA/OPTOELEK c / r 303DblD DODGlb? bôb H C A N A ID Silicon Photodiodes C30997 Series DATA SHEET Optics Tran sim p ed a n c e P re a m p lifie r M o d u le s W ith or W ith o u t Integral Fib e r O p tic P ig ta ils for D ete ction of 40 0 to 10 0 0 nm R a d ia tio n


    OCR Scan     		PDF C30997 C30997-XXX C30997-XXXQC-YY 14-pin C30971) ED-0015/02/88 C30971 RCA H 515 PREAMPLIFIER TRANSIMPEDANCE optic fet 090Q C30997-010 C30997-250 C30997-XXXQC-YY

    linear array photodiode element

    Abstract: Photodiode Array 32 element germanium photodiode PIN photodiode ge Photodiode Array linear Ge dual photodiode photodiode germanium photodiode linear array GE PHOTODIODE germanium
    Text: E G & G JUDSON 3 ^ ^ H CD J 1 D r Series ] • 303Db05 0000E22 S ■JUD -


    OCR Scan     		PDF 303Db05 16-element 32-element 30QHz J16P-40P- 500Ux1M 500Ux1 linear array photodiode element Photodiode Array 32 element germanium photodiode PIN photodiode ge Photodiode Array linear Ge dual photodiode photodiode germanium photodiode linear array GE PHOTODIODE germanium

    HgCdTe

    Abstract: PA100 ZnSe judson PA-100
    Text: E C U I H C T I Z J I v I C J UDSON 3TE J> . S r ie S • 303Db05 00 00235 3 M J U D Short-Wave Mercury Cadmium Telluride Detectors 2 to 5 jam 7-m-m Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors


    OCR Scan     		PDF 303Db05 J15TE J1435-Ì J15TE2-66S J15TE3-66S J15TE2 J15TE3 5-66S HgCdTe PA100 ZnSe judson PA-100

    090Q

    Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
    Text: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails


    OCR Scan     		PDF 303dbl0 C30998 --H/-67 C30998-XXXQC-YY L-1075 C30998-XXX 14-pin C30902) ED-0016/02/88 090Q PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db

    Untitled

    Abstract: No abstract text available
    Text: 5bE D • 303DbDci G0 010 34 455 H V C T VT B 1 1 1 2B I, 13BI VTB Process Photodiodes E G 8. G VACTEC PACKAGE DIMENSIONS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead, TO-46 package. The package incorporates an infrared rejection filter. Chip is isolated from


    OCR Scan     		PDF 303DbDci VTB1113BI VTB1112BI

    Vactec

    Abstract: dual photodiode VTB1012BI VTB1013BI k420
    Text: 5L.E ]> • 303DbGT 00G1G3D ÔOT « V C T VTB Process Photodiodes T ' 4^' 6 I V T B 1 0 1 2 B I , 1 3B I E G 8, G VACTEC " PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 18 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in


    OCR Scan     		PDF 303Dbm Q00103D VTB1012BI, to-46 4x1012 x1013 Vactec dual photodiode VTB1012BI VTB1013BI k420

    DDD1222

    Abstract: VTE3372LA VTE3374LA
    Text: SbE D 303DbDT DDD1222 STS GaAIAs Infrared Emitting Diodes VCT VTE3372LA, 74LA Long T-1 Plastic Package — 880 nm E 6 & 6 VACTEC - T-H» - I 3 h PACKAGE DIMENSIONS inch mm .2 2 .0 6 (5 .6 ) ( 1 .5 ) ( 0 .5 *) ( 0 . 4 -3 ) .0 2 3 .0 1 7 .0 2 6 .0 1 7 .1 2 6


    OCR Scan     		PDF DDD1222 VTE3372LA, VTE3372LA VTE3374LA VTE3372LA VTE3374LA

    VTB5050B

    Abstract: VTB5051B
    Text: SbE T> m 303DbDT 0001041 b'IS » V C T / V T B 5 0 5 0 B , 5051 B VTB Process Photodiodes E G & G VACTEC P A C K A G E D IM E N S IO N S inch mm CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) P R O D U C T D E S C R IP T IO N Planar silicon photodiode in a “flat" win­


    OCR Scan     		PDF 303DbDT VTB5050B, VTB5050B VTB5051B VTB5050B VTB5051B

    SIECOR Fiber Optic cable

    Abstract: EG*G Optoelectronics 2sa 1300 equivalent c30617e Siecor C860XXE-12 C30654 C30617 Siecor 62.5 SIECOR Fiber Optics
    Text: E G & 6 /CANADA/ OPTOELEK 47E » • 303DblG 00002=13 h ■ E O S iG CANA C86075E & OPTOELECTRONICS C86082E Series T - v t - e i C86082E Series C86075E Series HI“ - Dual-in-Line Package with Single or


    OCR Scan     		PDF 303Dbl0 C86075E C86082E C86075E C30616E, C30617E C30654 ED-0050/12/90 SIECOR Fiber Optic cable EG*G Optoelectronics 2sa 1300 equivalent Siecor C860XXE-12 C30617 Siecor 62.5 SIECOR Fiber Optics

    Untitled

    Abstract: No abstract text available
    Text: 303Db 0T 0 0 0 1 0 4 4 3T4 • VCT SbE D VTB5050UVJ, 1UVJ VTB Process Photodiodes 4 1 -S I E G & 6 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE14A Planarsilicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from


    OCR Scan     		PDF 303Db VTB5050UVJ, CASE14A VTB5050UVJ

    Untitled

    Abstract: No abstract text available
    Text: E G 8. G/ CANADA/ OPTOELEK M7E D 303Dbl0 OODOBEb b • CANA HAD Series 1100A T-W-67 Features • Built-in High Speed Amplifier • Groundable Case • Shielded Amplifier • Offset Null Control • Wide Spectral Range • Large Active Area Operating Data and Specifications at 23°C


    OCR Scan     		PDF 303Dbl0 T-W-67

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK SGD/YAG Series: 47E D • 303Dbl0 00D032M 2 ■ CANA Multi-Element T-V/-53 Features • • • Cross Talk > 1 % Between Elements Oxide Passivated Wide Spectral Range • • • Planar Diffused Structure Wide Spectral Range Linearity Over Wide Dynamic Range


    OCR Scan     		PDF 303Dbl0 00D032M T-V/-53 SGD-444-2 SGD-444-4 YAG-444-4 YAG-444-4: MIL-STD-750B MIL-STD-202D

    Untitled

    Abstract: No abstract text available
    Text: SbE D • 303DbD^ 0Ü D llfl3 .050" NPN Phototransistors HVCT VTT 111 2, 13, 14 TO-46 Lensed Package E TES G 8. G V A C T E C T—47—67 PACKAGE DIMENSIONS inch mm CASE 3 PRODUCT DESCRIPTION T0-4G HERMETIC (LENSED) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS ■


    OCR Scan     		PDF 303DbD^ VTT1112 VTT1113 VTT1114

    C30122

    Abstract: rca 036 LS117 o canada general electric
    Text: E G & Ê/CANADA/OPTOELEK 2e! D 303DblD tecîn c Optii 00D025G Eb3 ICANA 7141-1! Infrared-Emitting Diode C30122 D A TA S H E E T C30122 - Surface Emitting LED in two lead TO-18 package • W avelength o f Peak Radiant Intensity 904 nanom eters ■ T otal Radiant Flux at IF= 1 0 0 m A


    OCR Scan     		PDF 303DblD 00D025G C30122 C30122 rca 036 LS117 o canada general electric

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK 47E 3030blG D GGQ0332 I CANA 1 F Series FND-100;FNP-100Q;FOD-100 T4/-53 Features • • • High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Large Active Area Wide Spectral Range Low NEP Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias


    OCR Scan     		PDF 3030blG GGQ0332 FND-100 FNP-100Q FOD-100) T4/-53 FND-100Q) 303DblD FND-100, FND-100Q

    UV led 200 nm peak

    Abstract: UV led 320 nm 130LA uv led 365 VTB5051 VTB5051UV
    Text: VTB 5051U V VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a dual lead TO-5 package with a UV trans­ mitting “flat” window. Cathode is com­ mon to the case. These diodes offer very high shunt resistance and good


    OCR Scan     		PDF VTB5051 VTB5051UV 303Db0T UV led 200 nm peak UV led 320 nm 130LA uv led 365 VTB5051UV

    rca 036

    Abstract: C30957E photodiode demodulation
    Text: £ I G t & G/CANADA/OPTOELEK c / 3D30bl0 OOGGISS SbM H C A N A ID Photodiode C30957E DATA SHEET Optics l T - W n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm


    OCR Scan     		PDF 3030bl0 C30957E C30957E ED-0032/10/88 rca 036 photodiode demodulation

    C30817

    Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
    Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —


    OCR Scan     		PDF 3030bl0 C30954E, C30955E, C30956E C30954E C30955E Range--40Â C30817 s915 C30872 C30955E tic 1060 C30956E s914 C30916E 92LS-S916

    Vactec 25

    Abstract: Vactec phct VTT-C60
    Text: 3030bDti GQOliab 7 3 4 5t>E D .060" NPN Phototransistor Chip V TT-C 60 E G & G VACTEC C H IP D IM E N S IO N S inch mm> D E SC R IP T IO N EG&G Vactec fabricates its silicon photosensor chips using state-of-the-art planar diffusion technology. All chips are


    OCR Scan     		PDF VTT-C60 3030bCH T-41-47 2850K) Vactec 25 Vactec phct VTT-C60

    Untitled

    Abstract: No abstract text available
    Text: VTP4085, 4085S VTP Process Photodiodes PACKAGE DIMENSIONS inch mm .265 ( 6 . 73 ) .067 ( 1 .70 ) ( 0 . 51 ) CASE 13 CERAMIC PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­ strate and coated with a layer of clear


    OCR Scan     		PDF VTP4085, 4085S VTP4085 TP4085S 303Db0T

    A1W 73

    Abstract: .7J4 VTB100
    Text: VTB Process Photodiodes V T B 100 P A C K A G E D IM E N S IO N S cathode: 45° mark X .0 3 5 inch mm 1 .0 0 (0 .8 9 ) Ï - \ CATHODE, .2 3 0 (5 .8 4 ) SENSITIVE .2 1 0 (5 .3 3 ) SURFACE + jr_ AN O D E .2 8 5 (7 .2 4 ) .2 6 5 (6 .7 3 )’ .1 6 2


    OCR Scan     		PDF VTB100 3030bCH A1W 73 .7J4 VTB100

    VTL3B29

    Abstract: resistance 1k ohm E73887 27110 3B29 VTL3B19 20MA120
    Text: V T L 3 B 1 9, 3 B 2 9 Low Cost Neon Axial Vactrols PACKAGE DIMENSIONS inch mm UL Listed File #E73887 DESCRIPTION V T L 3 B 2 9 has a comparable "on” resistance to the V T L 3 B 1 9 , but with a much sm aller tem pera­ ture coefficient of resistance and less light his­


    OCR Scan     		PDF E73887 VTL3B19 VTL3B29 VTL3B19, VTL3B19. VTL3B19 VTL3B29 303DbCn 0D013L3 resistance 1k ohm E73887 27110 3B29 20MA120