SI-8100D
Abstract: si8100 Si8100DB
Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si8100DB
2002/95/EC
Si8100DB-T2trademarks
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SI-8100D
si8100
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Untitled
Abstract: No abstract text available
Text: VLZ-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • High reliability • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in
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AEC-Q101
2002/95/EC
2002/96/EC
VLZ-series-GS18
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Global Part Numbering Information
Abstract: NTCS0603E3103 NTCS0805E3222 NTCS0805E3103 NTCS0805E3153 NTCS0402E3223 NTCS0402E3103 NTC 4,7 S M NTCS0805E3334 NTCS0402E3104
Text: Global Part Numbering Information Vishay BCcomponents NTC SMD GENERAL ORDER INFORMATION GLOBAL PART NUMBER: NTC S 0805 E3 103 F M T N T C S PRODUCT FAMILY EXECUTION SIZE NTC S = SMD 0805 0603 0402 8 5 RoHS COMPLIANCE TERMINATION TYPE E 3 R25 VALUE 103 = 10 x 103
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B25/85
NTCS0805E3222
NTCS0805E3472
NTCS0805E3103
Global Part Numbering Information
NTCS0603E3103
NTCS0805E3153
NTCS0402E3223
NTCS0402E3103
NTC 4,7 S M
NTCS0805E3334
NTCS0402E3104
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Untitled
Abstract: No abstract text available
Text: New Product Si7794DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0034 at VGS = 10 V 60 0.0042 at VGS = 4.5 V 60 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Si7794DP
2002/95/EC
Si7794DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters
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SiR818DP
2002/95/EC
SiR818DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR812DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.00145 at VGS = 10 V 60 0.00165 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 109 nC APPLICATIONS PowerPAK SO-8 6.15 mm • • • • 5.15 mm
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SiR812DP
2002/95/EC
SiR812DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TLHK4600 www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Very wide viewing angle
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TLHK4600
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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si7792
Abstract: 325B MARKING
Text: New Product Si7792DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0021 at VGS = 10 V 60 0.0026 at VGS = 4.5 V 60 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Si7792DP
2002/95/EC
Si7792DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si7792
325B MARKING
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Untitled
Abstract: No abstract text available
Text: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server
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SiR774DP
2002/95/EC
SiR774DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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K134
Abstract: No abstract text available
Text: New Product SiS444DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) () Max.
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SiS444DN
2002/95/EC
SiS444DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
K134
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SiR812DP-T1-GE3
Abstract: No abstract text available
Text: New Product SiR812DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.00145 at VGS = 10 V 60 0.00165 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 109 nC APPLICATIONS PowerPAK SO-8 6.15 mm • • • • 5.15 mm
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SiR812DP
2002/95/EC
SiR812DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si7792DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0021 at VGS = 10 V 60 0.0026 at VGS = 4.5 V 60 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Si7792DP
2002/95/EC
Si779electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR818DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0028 at VGS = 10 V 50g 0.0033 at VGS = 4.5 V 50g VDS (V) 30 Qg (Typ.) 30.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Low-Side Switch for DC/DC Converters
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SiR818DP
2002/95/EC
SiR818DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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SiS410DN
2002/95/EC
SiS410DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR820DP
2002/95/EC
SiR820DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: O C/ >0D RASTER •o > 3r M ^io 'NlO o_ oo , > o n IO o-n 6 I 4* •vj WJM |10 AUG 89 check DCS 14 AUG 89 CMH 30JAN12 [c h e c k CATALOG LISTING V 7 -4 A 17 D 8 [r e l e a s e NO. PR — 17596 | REPLACES X91517-V7 x S € 70 m > s 3 0 D is £ = 70 > (/>
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30JAN12
X91517-V7
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C6076
Abstract: No abstract text available
Text: CATALOG MICRO SWITCH SWITCH-BASIC a Honeywell Division F E D .M F G .C O D E LISTIN G V 7 -7 A 1 9 D 8 CW -C6076 9 1929 00 û Ö < h Ll_ ° - _ I ^ Q * > < CL CN R E V I S I ONS A 0085964 SBH 30JAN12 ANSI Y14.5M — 1982 APPLIES THI RD A N G L E P R O J E C T I O N
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-C6076
30JAN12
C6076
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X9412
Abstract: No abstract text available
Text: M ro RASTER DCS n r| o C/ > 0D |27 F EB 89 check j a P 28 FEB 89 CMH 30JAN12 [check CATALOG LISTING V7-1A17D8 [ RELEASE NO. P R — 17140 [REPLACES X94122-V7 s 0I S « m "< o € 7) X * 30 m> !=* D Eo 01 o < ° m 73 > (/> S £ •Z = O «! i> o o 73 cn ho
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30JAN12
V7-1A17D8
X94122-V7
X9412
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n6tp
Abstract: No abstract text available
Text: CATALOG MICRO SWITCH F E D .M FG .C O D E V 7 -2 B 1 7 D 8 -1 6 2 SWITCH-BASIC a Honeywell Division L I S T I NG CW -B3072 9 1929 CN CD T oo Q 5 CN ï I s 1^ : > S TEEL LEVER CO REV I S I ONS CM CO A 76214 G R T 2 OCT 9 3 < O B 0 0 8 5 9 6 4 CO SBH 30JAN12
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-B3072
30JAN12
n6tp
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Untitled
Abstract: No abstract text available
Text: CATALOG MICRO SWITCH SWITCH - a Honeywell Division FED.M FG .CO DE BASIC L I ST I NG V 7 -2 B 1 7 D 8 -0 2 2 C W -B 3 0 8 3 91929 CN CN o I 00 o l \ s CN S TE EL A CT UA TO R I > CO R E V I S I ONS A CO 76214 CM CRT 25 OCT 93 < B 0085964 o CO SBH 30JAN12 2
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30JAN12
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Untitled
Abstract: No abstract text available
Text: CATALOG MICRO SWITCH FED.M FG .CO DE V7-2B17D8-048 SWITCH-BASIC a Honeywell Division L I ST I NG C W -B 3 0 8 8 91929 oo 1 oo 5 CN 1 > CO REV I S IONS CO 76214 2QG0CTT 93 B 0085964 SBH 30JAN12 NOTE 1 - CAUTION: OVERTRAVEL FORCE ON LEVER MUST NOT RESULT AN OVERTRAVEL FORCE ON PLUNGER EXCEEDING 5 LBS
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V7-2B17D8-048
30JAN12
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Untitled
Abstract: No abstract text available
Text: CATALOG MICRO SWITCH FED.MFG.CODE V7-1A37D8-000-3 SWITCH-BASIC a Honeywell Division L I ST ING C W -B 0088 9 1929 -.165 .125 .3 8 5 .11 i 1 REF.187 *.0 0 3 I n nn .4 0 T PLASTIC PLUNGER REV I S I O N S PR19025 J A P 11 MAR 91 B 1^108 LJF 2 0 OCT 93 cJq SBH
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V7-1A37D8-000-3
PR19025
30JAN12
1/10HP
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Untitled
Abstract: No abstract text available
Text: > I <T> OJ c MICRO SWITCH FREEPORT ILLINOIS. U S A A DIVISION OF l i s t i n g V7 -2 BI7 D8 SW ITC H -B A SIC HONEYWELL a t a l o g CW-B3068 FED. MFG. CODE »182* a> X GO Û ÍX GQ CM i N - > .796*.010 u z £ * o; u I S I h». 165 1 -.047 MAX K .ll Od X LO
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CW-B3068
C06635C
30JAN12
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Untitled
Abstract: No abstract text available
Text: CATALOG MICRO SWITCH FED.M FG .CO DE V 7 -1B 17D 8 -2 6 3 SWITCH-BASIC a Honeywell Division L I ST I NG C W -B 4 7 0 9 91929 CO c\i I 00 Cl m T > - - .1 1 .110 MAX -n PRETRAVEL I— -.0 4 0 1 0 .114*.002 HOLE .116 ±.015 CO -.24 .73 0 *.06 0 OPERATING POSITION .4 0 6 *.0 0 3
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C071698
30JAN12
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