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Vishay Siliconix SIS410DN-T1-GE3 MOSFET N-CH 20V 35A PPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS410DN-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.42786	Buy Now
Vishay Intertechnologies SIS410DN-T1-GE3 N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIS410DN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS410DN-T1-GE3	Reel		17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.41075	Buy Now
Mouser Electronics	SIS410DN-T1-GE3		32,000			1 $1.27 10 $0.937 100 $0.679 1000 $0.487 10000 $0.388	Buy Now
Verical	SIS410DN-T1-GE3		6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.3786	Buy Now
	SIS410DN-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.4011	Buy Now
Arrow Electronics	SIS410DN-T1-GE3		6,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.3786	Buy Now
	SIS410DN-T1-GE3		3,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.4002	Buy Now
Newark	SIS410DN-T1-GE3	Bulk			1	1 $1.12 10 $0.936 100 $0.749 1000 $0.649 10000 $0.649	Buy Now

TTI	SIS410DN-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.387	Buy Now
TME	SIS410DN-T1-GE3				1	1 $1.01 10 $0.9 100 $0.71 1000 $0.67 10000 $0.67	Get Quote
EBV Elektronik	SIS410DN-T1-GE3			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIS410DNT1GE3 N-CHANNEL 20 V (D-S) MOSFET Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIS410DNT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIS410DN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIS410DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 35A PPAK 1212-8		Original	PDF

SIS410DN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SiS410DN-T1-GE3 Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS410DN SiS410DN-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	SiS410DN 2002/95/EC SiS410DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	SiS410DN 2002/95/EC SiS410DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiS410DN-T1-GE3 Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS410DN SiS410DN-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	SiS410DN 2002/95/EC SiS410DN-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)	Original	PDF	SiS410DN SiS410DN-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS410DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiS410DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	SiS410DN 2002/95/EC SiS410DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	SiS410DN 2002/95/EC SiS410DN-T1-GE3 11-Mar-11
82377 Abstract: No abstract text available Text: SPICE Device Model SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	PDF	SiS410DN 18-Jul-08 82377
AN609 Abstract: No abstract text available Text: SiS410DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	SiS410DN AN609, 19-Sep-08 AN609
Untitled Abstract: No abstract text available Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	SiS410DN 2002/95/EC SiS410DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836