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32N80 Price and Stock

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Littelfuse Inc IXFK32N80Q3 MOSFET N-CH 800V 32A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK32N80Q3	Tube	442		1	1 $25.63 10 $25.63 100 $17.8668 1000 $17.8668 10000 $17.8668	Buy Now
Newark	IXFK32N80Q3	Bulk			300	1 - 10 - 100 - 1000 $18.73 10000 $18.73	Buy Now
RS	IXFK32N80Q3	Bulk		8 Weeks	25	1 - 10 - 100 $27.63 1000 $27.63 10000 $27.63	Get Quote
Littelfuse Inc IXFK32N80P MOSFET N-CH 800V 32A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK32N80P	Tube	300		1	1 $17.62 10 $17.62 100 $17.62 1000 $9.60338 10000 $9.60338	Buy Now
Newark	IXFK32N80P	Bulk			300	1 - 10 - 100 - 1000 $10.07 10000 $10.07	Buy Now
RS	IXFK32N80P	Bulk		8 Weeks	25	1 - 10 - 100 $14.85 1000 $14.85 10000 $14.85	Get Quote
Remington Industries 32N8025 RESISTANCE WIRE 32AWG 25'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	32N8025	Bag			1	1 $10.95 10 $10.95 100 $10.95 1000 $10.95 10000 $10.95	Buy Now
Remington Industries 32N80500 RESISTANCE WIRE 32AWG 500'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	32N80500	Bag			1	1 $26.39 10 $26.39 100 $26.39 1000 $26.39 10000 $26.39	Buy Now
Remington Industries 32N80100 RESISTANCE WIRE 32AWG 100'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	32N80100	Bag			1	1 $12.51 10 $12.51 100 $12.51 1000 $12.51 10000 $12.51	Buy Now

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32N80 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
32N80P Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFK 32N80P IXFX 32N80P VDSS ID25 = 800 V = 32 A Ω ≤ 270 mΩ ≤ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800	Original	32N80P O-264 32N80P	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM VDSS = ID25 = RDS on ≤ ≤ trr IXFR 32N80P (Electrically Isolated Back Surface) 800 V 20 A 290 m Ω 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 32N80P	PDF
32n80 Abstract: ISOPLUS247 Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 32N80P VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 800 V 20 A 290 m Ω 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 32N80P 32n80 ISOPLUS247	PDF
32N80P Abstract: PLUS247 IXFK 32N80P TO264 IXFK32N80P Text: PolarHVTM HiPerFET Power MOSFET IXFK 32N80P IXFX 32N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	32N80P 32N80P PLUS247 IXFK 32N80P TO264 IXFK32N80P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
Untitled Abstract: No abstract text available Text: Hi Per FAST IGBT with Diode IXGH 32N60BD1 CES CE sat Combi Pack t f1 600 60 2.2 80 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T j =25° C to 150° C 600 V VCGR T j = 25° C to 150° C; RGE= 1 M ii 600 V v GES Continuous	OCR Scan	32N60BD1 O-247	PDF