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    32N90 Search Results

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    32N90 Price and Stock

    Cypress Semiconductor S29GL032N90FFIS30

    NO WARRANTY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S29GL032N90FFIS30 Tray 16,817 1
    • 1 $0.92
    • 10 $0.92
    • 100 $0.92
    • 1000 $0.92
    • 10000 $0.92
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    Flip Electronics S29GL032N90FFIS30 2,720
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    Infineon Technologies AG S29GL032N90FFIS10

    IC FLASH 32MBIT PARALLEL 64FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S29GL032N90FFIS10 Tray 782 1
    • 1 $3.41
    • 10 $3.026
    • 100 $2.8165
    • 1000 $2.46035
    • 10000 $2.46035
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    Avnet Americas S29GL032N90FFIS10 Tray 0 Weeks, 2 Days 327
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    • 1000 $2.142
    • 10000 $2.0196
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    Infineon Technologies AG S29GL032N90FFIS20

    IC FLASH 32MBIT PARALLEL 64FBGA
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    DigiKey S29GL032N90FFIS20 Tray 705 1
    • 1 $3.51
    • 10 $3.111
    • 100 $2.8955
    • 1000 $2.52941
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    Infineon Technologies AG S29GL032N90DFI020

    IC FLASH 32MBIT PARALLEL 64FBGA
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    DigiKey S29GL032N90DFI020 Tray 127 1
    • 1 $3.51
    • 10 $3.111
    • 100 $2.79325
    • 1000 $2.79325
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    Avnet Americas S29GL032N90DFI020 Tray 0 Weeks, 2 Days 175
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    • 1000 $3.9032
    • 10000 $3.7884
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    Rochester Electronics S29GL032N90DFI020 1,186 1
    • 1 $2.44
    • 10 $2.44
    • 100 $2.29
    • 1000 $2.07
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    IXYS Corporation IXGH32N90B2D1

    IGBT 900V 64A 300W TO247
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    DigiKey IXGH32N90B2D1 Tube
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    32N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32N90B2

    Abstract: 32n90
    Text: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 32N90B2 IC110 O-247 O-268 32N90B2 32n90

    32N90B2

    Abstract: No abstract text available
    Text: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES


    Original     		PDF 32N90B2D1 IC110 O-247 32N90B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original     		PDF 32N90B2D1 150OC 150OC; IC110 125OC, 10parameters 30-12AR 0-12A) 0-12A 30-12AR)

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 32N90B2 IC110 O-247 O-268

    SiS 961

    Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9
    Text: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM


    Original     		PDF 32N90B2D1 150OC 150OC; IC110 125OC, 30-12AR 0-12A) 0-12A 30-12AR) SiS 961 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9

    IXGH 32N90B2D1

    Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2
    Text: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES


    Original     		PDF 32N90B2D1 O-247 IC110 IXGH 32N90B2D1 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    32N50

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C


    OCR Scan     		PDF 32N50BU1 32N50BU1S O-247 32N50BU1S) 32N90BU1 32NS0BU1S B2-22 32N50