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32N90B2D1 Price and Stock

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IXYS Corporation IXGH32N90B2D1 IGBT 900V 64A 300W TO247
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DigiKey	IXGH32N90B2D1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGT32N90B2D1 IGBT 900V 64A TO268AA
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DigiKey	IXGT32N90B2D1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXGT32N90B2D1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGR32N90B2D1 IGBT 900V 47A 160W ISOPLUS247
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DigiKey	IXGR32N90B2D1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	IXGR32N90B2D1				1	1 $11.9 10 $9.48 100 $8.52 1000 $8.52 10000 $8.52	Get Quote
IXYS Integrated Circuits Division IXGH32N90B2D1 IGBT DIS.DIODE SINGLE 32A 900V H.FAST TO247-3
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Ozdisan Elektronik	IXGH32N90B2D1					1 $4.72395 10 $4.72395 100 $4.2945 1000 $4.2945 10000 $4.2945	Get Quote

32N90B2D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
32N90B2 Abstract: No abstract text available Text: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V VGES	Original	PDF	32N90B2D1 IC110 O-247 32N90B2
Untitled Abstract: No abstract text available Text: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM	Original	PDF	32N90B2D1 150OC 150OC; IC110 125OC, 10parameters 30-12AR 0-12A) 0-12A 30-12AR)
SiS 961 Abstract: 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9 Text: Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE sat tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM	Original	PDF	32N90B2D1 150OC 150OC; IC110 125OC, 30-12AR 0-12A) 0-12A 30-12AR) SiS 961 32N90B 720V ISOPLUS247 125OC 32N90B2D1 IF110 32n90 IXGR32N90B2D1 32N9
IXGH 32N90B2D1 Abstract: 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2 Text: Advance Technical Information IXGH 32N90B2D1 IXGT 32N90B2D1 HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings VCES IC25 VCE sat tfi typ = 900 V = 64 A = 2.7 V = 150 ns TO-247 (IXGH) VCES	Original	PDF	32N90B2D1 O-247 IC110 IXGH 32N90B2D1 32N90B2D1 IXGH32N90B2D1 IF110 720v 32N90B2
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2