Untitled
Abstract: No abstract text available
Text: Power Amplifiers KU PA 092096-35 A, Power Amplifier 920 . 960 MHz • 35 W Preliminary technical data Features • LDMOS-technology • High efficiency • Monitor output for forward power detection DC voltage Applications • Analog and digital transmission systems
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s8vt-f48024e
Abstract: S8VT-F12024E
Text: M03E-EN-02B+S8VT+Datasheet.fm Seite 1 Montag, 8. Juni 2009 3:35 15 Switch Mode Power Supply S8VT 120/240/480/960 W Models Natural Cooling Three-phase Power Supply Range from 5A up to 40A with Output Voltage of 24VDC • 3 phase 400 to 500 VAC • 5, 10, 20 and 40 A; 24 VDC output
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24VDC
UL60950
CSA22
UL508
EN61000-3-2
M03E-EN-01
s8vt-f48024e
S8VT-F12024E
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SO42
Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002
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PowerSO-10RF
PD54003
PD54008
PD55003
PD55008
PD55015
PD55025S
PD57002
PD57006
PD57018
SO42
STM 160-30
"class AB Linear" hf
PD55003 equivalent
SD57045
linear amplifier 470-860
LT5232
VHF lna 30 to
SD4100
SD2932 linear amplifier
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100B100JW500X
Abstract: No abstract text available
Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
Hz--895
DS04-134RFPP
DS04-068RFPP)
100B100JW500X
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j0947
Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
AGR09090EF
Typic14
Hz--895
j0947
JESD22-C101A
ZX18
ZO 109 wa
100B100JW500X
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AGR09090EF
Abstract: JESD22-C101A ZX18 grm40x7r103k100al
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
AGR09090EF
DS04-153RFPP
DS04-134RFPP)
JESD22-C101A
ZX18
grm40x7r103k100al
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100B120JW500X
Abstract: grm40x7r103k100al 100B470JW500X 100B100JW500X
Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
DS04-068RFPP
DS04-064RFPP)
100B120JW500X
grm40x7r103k100al
100B470JW500X
100B100JW500X
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
Hz--895
Therma10-12,
DS04-064RFPP
DS04-058RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
DS04-134RFPP
DS04-068RFPP)
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Untitled
Abstract: No abstract text available
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced
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PTFA092201E
PTFA092201F
220-watt,
H-30260-2
H-31260-2
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Untitled
Abstract: No abstract text available
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
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PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
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a2324
Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
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PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
a2324
H-37260-2
elna 50v
LM7805 05
BCP56
LM7805
RO4350
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by TP3034/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3034 The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast
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TP3034/D
TP3034
TP3034
TP3034/D*
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elna 50v
Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
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PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
elna 50v
BCP56
LM7805
RO4350
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MHVIC910HNR2 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MHVIC910HR2 921 MHz - 960 MHz SiFET
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MHVIC910HNR2
MHVIC910HR2
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OZ 960 S
Abstract: 10149 OZ 960 G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM gsm amplifier
Text: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched 70–watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain.
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P5182-ND
P4525-ND
1-877-GOLDMOS
1522-PTF
OZ 960 S
10149
OZ 960
G200
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
gsm amplifier
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diode SKE 1/10
Abstract: G200 0509L OZ 960 S
Text: PTF 10020 125 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10020 is an internally matched, 125–watt GOLDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. This device operates with 55% efficiency and 12.5 dB gain.
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1301-rpm
1-877-GOLDMOS
1522-PTF
diode SKE 1/10
G200
0509L
OZ 960 S
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Untitled
Abstract: No abstract text available
Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier
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PTFA092213EL
PTFA092213FL
PTFA092213EL
PTFA092213FL
220-watt,
H-34288-4/2
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35 W 960 MHz RF POWER TRANSISTOR NPN
Abstract: TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08
Text: MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation
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MAPRST0912-350
35 W 960 MHz RF POWER TRANSISTOR NPN
TRANSISTOR 618
J1 TRANSISTOR
1090
35 W 960 MHz
MAPRST0912-350
1215
transistor j08
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HDR2X10STIMCSAFU
Abstract: MHVIC910HR2 J559
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHVIC910HR2/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. 921 MHz − 960 MHz SiFET RF Integrated Power Amplifier MHVIC910HR2 The MHVIC910HR2 integrated circuit is designed for GSM base stations,
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MHVIC910HR2/D
MHVIC910HR2
MHVIC910HR2
HDR2X10STIMCSAFU
J559
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T119 A
Abstract: sot 122 SOT123 Package BLW78
Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain
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4-26V
BLV97CE
BLV101A
BLV101B
BLV948
OT-171,
OT-273,
OT-262A2,
2N3866
T119 A
sot 122
SOT123 Package
BLW78
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T35 diode
Abstract: power diode T35-4 diode T35 -4-D6 T35-4 diode
Text: Afifacm w an A M P com pany Wireless Bipolar Power Transistor, 35W 850 - 960 MHz PH0810-35 V2.00 Features • • • • • • .975 2 4 .7 7 .725 _ (18,42) D esigned for L inear A m plifier A pplications Class AB: -30dBc Typ 3rd IMD at 15 W atts PEP
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-30dBc
PH0810-35
1N4245
10T/ND.
PH0810-35
T35 diode
power diode T35-4
diode T35 -4-D6
T35-4 diode
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N :IL[i g?GMD § SD1530-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIG NED FOR HIGH POWER PULSED IFF, DME, TACAN APPLIC ATIO N S ■ . ■ . 40 W ATTS (typ. IFF 1030 - 1090 MHz 35 W ATTS (min.) DME 1025 - 1150 MHz 25 W ATTS (typ.) TACAN 960 - 1215 MHz
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SD1530-01
SD1530-01
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35 W 960 MHz RF POWER TRANSISTOR NPN
Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
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TP3034
TP3034
35 W 960 MHz RF POWER TRANSISTOR NPN
2779, transistor
transistor j8
j8 er capacitor
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