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    CEM4435

    Abstract: CEM4435 transistor so-8
    Text: P R E L IM IN A R Y P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V , -8A , R ds on =20it iQ -5A , R ds(on)=35iti Q @Vgs=-10V. @Vgs=-4.5V. • Super high dense cell design for extremely low Rds(on).


    OCR Scan     		PDF CEM4435 20itiQ 35iti CEM4435 CEM4435 transistor so-8

    CEM8958

    Abstract: No abstract text available
    Text: mu CEM8958 PRELIMINARY Dual Enhancement Mode Field Effect Transistor^ and P Channel FEATURES • 3 0 V , 5 .3 A , Rds on)=35iti Q @Vgs=10V. Di R ds(on)=50iti Q @Vgs=4.5V. Di D2 D2 -30V, -4.0A , RDS(ON)=65m Q @Vgs=-10V. R ds(on)=100iti Q @Vgs=-4.5V. • Super high dense cell design for extremely low R d s (o n >.


    OCR Scan     		PDF CEM8958 Power958 CEM8958