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    369AC Search Results

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    369AC Price and Stock

    Central Semiconductor Corp CP396V-2N2369A-CT20

    TRANS NPN 15V 0.2A DIE 1=20PCS
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    DigiKey CP396V-2N2369A-CT20 Tray 3 1
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    Analog Devices Inc DC1369A-C

    BOARD DEMO 80MSPS LTC2259-14
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    DigiKey DC1369A-C Bulk 1 1
    • 1 $251.41
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    Mouser Electronics DC1369A-C
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    Analog Devices Inc DC1369A-C 24
    • 1 $251.41
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    Richardson RFPD DC1369A-C 1
    • 1 $246.52
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    Skyworks Solutions Inc SI5369A-C-GQ

    IC CLK MULT JITTER ATTEN 100TQFP
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    DigiKey SI5369A-C-GQ Tray 90
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    Richardson RFPD SI5369A-C-GQ 1
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    Skyworks Solutions Inc SI5369A-C-GQR

    IC CLK MULT JITTER ATTEN 100TQFP
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    DigiKey SI5369A-C-GQR Reel 250
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    Mouser Electronics SI5369A-C-GQR
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    Richardson RFPD SI5369A-C-GQR 1
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    Analog Devices Inc ADL5369ACPZ-R7

    IC MIXER 300MHZ-1100MHZ 20-LFCSP
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    ADL5369ACPZ-R7 Digi-Reel 1
    • 1 $12.7
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    Rochester Electronics ADL5369ACPZ-R7 14,666 1
    • 1 $7.57
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    Find more 369AC price and stock on Findchips.com

    369AC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    369AC

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC−01 ISSUE O DATE 08 FEB 2005 SCALE 1:1 B V C E R A SEATING PLANE K W F J G H D 3 PL 0.13 0.005 W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.


    Original     		PDF 369AC-01 369AC 369AC

    13nhg

    Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G

    369D

    Abstract: NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC
    Text: NTD4857N Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4857N NTD4857N/D 369D NTD4857N NTD4857N-1G NTD4857N-35G NTD4857NT4G 369AC

    mosfet 63ng

    Abstract: MOSFET 48 63ng 49 63ng NTD4863N
    Text: NTD4863N Power MOSFET 25 V, 49 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4863N NTD4863N/D mosfet 63ng MOSFET 48 63ng 49 63ng NTD4863N

    60NG

    Abstract: 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4860N NTD4860N/D 60NG 4860ng 4860N NTD4860N Power MOSFET 369D NTD4860N

    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG

    369D

    Abstract: NTD4970N NTD4970NT4G 70ng
    Text: NTD4970N Advance Information Power MOSFET 30 V, 36 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4970N NTD4970N/D 369D NTD4970N NTD4970NT4G 70ng

    369D

    Abstract: NTD4815NH NTD4815NHT4G 15nhg
    Text: NTD4815NH Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4815NH NTD4815NH/D 369D NTD4815NH NTD4815NHT4G 15nhg

    N03G

    Abstract: nc555 nc 555 65N03 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G
    Text: NTD65N03R Power MOSFET 25 V, 65 A, Single N−Channel, DPAK Features • • • • Low RDS on Ultra Low Gate Charge Low Reverse Recovery Charge Pb−Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP Applications • Desktop CPU Power • DC−DC Converters


    Original     		PDF NTD65N03R NTD65N03R/D N03G nc555 nc 555 65N03 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G

    48 13ng mosfet

    Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet 369C 369D NTD4813N NTD4813NT4G TF 241

    04NG

    Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117

    56NG mosfet

    Abstract: 48 56NG 56NG 4856N 4856ng 369D
    Text: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4856N NTD4856N/D 56NG mosfet 48 56NG 56NG 4856N 4856ng 369D

    55NG

    Abstract: 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D
    Text: NTD4855N Power MOSFET 25 V, 98 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4855N NTD4855N/D 55NG 4855ng 4855n NTD4855NT4G NTD4855N-1G NTD4855N-35G 369D

    4805ng

    Abstract: 369D NTD4805N
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4805N NTD4805N/D 4805ng 369D NTD4805N

    4810NG

    Abstract: No abstract text available
    Text: NTD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4810N NTD4810N/D 4810NG

    48 13ng mosfet

    Abstract: NTD4813N
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet

    08NG

    Abstract: No abstract text available
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 08NG

    4810NG

    Abstract: 4810N
    Text: NTD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4810N 10mplicable NTD4810N/D 4810NG 4810N

    50N03

    Abstract: No abstract text available
    Text: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD50N03R NTD50N03R/D 50N03

    Untitled

    Abstract: No abstract text available
    Text: NTD4913N Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4913N NTD4913N/D

    N03RG

    Abstract: 78N03 NTD78N03RG NTD78N03RT4 NTD78N03RT4G 369D NTD78N03R 78n03r NTD78N03
    Text: NTD78N03R Power MOSFET 25 V, 85 A, Single N−Channel, DPAK Features • Low RDS on to Minimize Conduction Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available http://onsemi.com Applications V(BR)DSS • VCORE Applications


    Original     		PDF NTD78N03R NTD78N03R/D N03RG 78N03 NTD78N03RG NTD78N03RT4 NTD78N03RT4G 369D NTD78N03R 78n03r NTD78N03

    50N03

    Abstract: No abstract text available
    Text: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		PDF NTD50N03R NTD50N03R/D 50N03

    4860ng

    Abstract: 60NG 369D NTD4860N
    Text: NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4860N NTD4860N/D 4860ng 60NG 369D NTD4860N

    4808ng

    Abstract: 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 4808ng 08NG