BD785
Abstract: bd786 BD787 bd788 B0786 B0788 Motorola BD785 b0787 60VOLTS NPN, Si, POWER TRANSISTOR, PLASTIC
Text: motorola sc xstrs / r 15E f D I fc,3b72S4 G G f l4 7 4cl 1 | NPN MOTOROLA BD785, BD787 SEM ICO N D U CTO R PNP TECHNICAL DATA BD786, BD788 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY PLASTIC SILICON ANNULAR* POWER TRANSISTORS . , . designed for low power audio amplifier and low current, high
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3b72s4
BD785,
BD787
BD786,
BD788
BD786
BD787,
60VOLTS
BD785
BD787
bd788
B0786
B0788
Motorola BD785
b0787
NPN, Si, POWER TRANSISTOR, PLASTIC
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transistor MJE8501
Abstract: MJE8501 je8501 IN4914 MJE8500 MJE-8501 221A-04 AN-222 S370 pd6517
Text: MOTOROLA SC 1EE D § fc.3b72SM □GöSat.'J 7 | XSTRS/R F M JE6 0 4 0 th n iM JE6 0 4 5 ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8500 MJE8501 D esign ers Data Sheet 2 .5 A M P E R E NPN SILICON POWER TR A N SISTO R S SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
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3b72S4
MJE8500
MJE8501
MJE8501
transistor MJE8501
je8501
IN4914
MJE-8501
221A-04
AN-222
S370
pd6517
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74HC77
Abstract: No abstract text available
Text: MOTOROLA SC -CLOGIC3- fll DE|t,3b72S2 0077^27 2 f ~ 6 3 67Z52 M O T O R O L A S C L O G IC 89D 7 7 9 2 7 'M O T O R O L A - • SEMICONDUCTOR 7- ¥ 6 - 0 7 - o f TECHNICAL DATA MC54/74HC7793 Product Preview Octal 3-State IMoninverting Transparent Latch with
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3b72S2
67Z52
MC54/74HC7793
MC54/74HC7793
74HC77
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F SbE D • fc.3b72S4 QCH0537 5 ■ MOTOROLA SEMICONDUCTOR mmmimmmmmi TECHNICAL DATA I£ "T 1 PRELIMINARY DATA MRH1230PHXV, MRH1230PHS D PR O C ESSED TO MIL-S-19500 O m im RADIATION TOLERANT TRANSISTOR 30 VOLT, 6 AM PERE U Discrete Military
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3b72S4
QCH0537
MRH1230PHXV,
MRH1230PHS
MIL-S-19500
b3b7254
00T0S3fl
T-37-/S
MRH630PHXV
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Untitled
Abstract: No abstract text available
Text: MOTOROL A SC X S TR S/R F 1SE D | fc>3b72S4 OOöhSSl 1 | M A X I M U M R A T IN G S Sym bol Value Collector-Emitter Voltage VcEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Rating Unit Ve b o 4.0 Vdc Collector Current — Continuous 'C 50
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3b72S4
IMD4261
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6a2c
Abstract: A1023
Text: MOTOROLA SC M E M O R Y / A S I C 4bE D B L,3b72Sl QOôQ'îaS 7 É I M 0 T 3 8K x 9 Bit Fast Static RAM MCM6265C T -H L -X 3 -3 7 P PACKAGE 300 MIL PLASTIC CASE 71 OB Nd PACKAGE 300 MIL SOJ CASE 81 OB PIN ASSIGNMENT A8 C 1 * PIN NAMES A0-A12 . . Address Input
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3b72Sl
MCM6265C
A0-A12
MCM6265C
MCM6265CP12
MCM6265CNJ12
MCM6265CNJ12R2
6a2c
A1023
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2N2195
Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
Text: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:
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-CDI0DES/0PT03-
3b72SS
2N656
2N699
2N718
2N720
2N735
2N736
2N739
2N740
2N2195
2N1990
2N1893 motorola
2N3700 DIE
motorola 2N2270
2n2102 motorola
2N2297
motorola 2N3019
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3B2S
Abstract: MRF428
Text: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power
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3b72S4
MRF428
T--33--13
3B2S
MRF428
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Ferroxcube core
Abstract: PT8864 PT8864A VK21107-3B C3-250
Text: 15E O I fc,3b72S4 000013^ S I MO TOR OLA SC MOTOROLA r- XSTRS/R F SEMICONDUCTOR TECHNICAL DATA PT8864 PT8864A The RF Line NPN Silicon VHF Pow er Transistors . . . designed for 12,5 Volt, mid-band large-signal amplifier applications in industrial and com m ercial FM equipm ent operating in the 40 to 100 MHz range.
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PT8864
PT8864A
16AWG,
VK211-073B
Ferroxcube core
PT8864A
VK21107-3B
C3-250
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cr8s motorola
Abstract: MTM2N50 AN569 N250 mtp2n mtp2n50 transistor
Text: MOTOROLA SC XSTRS/R F bflE D fc>3b72S4 ÜO^ f l S4 7 052 M OTOROLA • SEMICONDUCTOR H TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C hannel Enhan cem en t-M ode S ilic o n Gate TMOS ROWER FET 2 AMPERES RDS(on) = 4 OHMS
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s400\
cr8s motorola
MTM2N50
AN569
N250
mtp2n
mtp2n50 transistor
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MPSA06 transistor
Abstract: MPS-8000 mps-a06 MPSA05 motorola SILICON DICE motorola
Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 &F|t.3b72SS 0030000 7 CDIODES/OPTO 3 ^c SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) D IE N O . MPSAC05 — LIN E S O U R C E — T ' 2 38008 2- / NPN D M B 1 08 This die provides performance similar to that of the following device types:
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3b72SS
MPSAC05
MPS3402
MPS8000
MPSA05
MPSA06
MPSA06 transistor
MPS-8000
mps-a06
MPSA05 motorola
SILICON DICE motorola
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mt 1389 de
Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
Text: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B
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3b72S4
MM3735
MM3737
MIL-S-19500/395B
O-116)
mt 1389 de
mt 1389 de ic
NS 8002 1151
mt 1389 de motorola
2N3737
2N3735
TO-206AB
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC -CLOGICÏ Tfl dF | fc,3b72Sa 0 0 7 ^ 4 5 7 1 J “ 636725? MOTOROLA SC LOGIC ' D 7^ H ~07'65 98D 79457 MC14011B, MC14Û12B See Page 6-5 MOTOROLA MC14011UB, MC14012UB See Page 6-14 MC14013B DUAL TYPE D FLIP-FLOP T h e M C 1 4 0 1 3 B d u a l ty p e D flip - flo p is c o n stru c te d w it h M O S
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3b72Sa
MC14011B,
MC14011UB,
MC14012UB
MC14013B
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bfl 177
Abstract: IR 92 0151 motorola 600 ssd MTP2N50 mosfet ssd
Text: MOTOROLA SC M O TO R O LA XSTRS/R F bfl E ]> • fc>3b72S4 ÜO' îflSM? 052 ■MOTf c. ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2 AMPERES RDS(on) = 4 OHMS
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3b72S4
O-204AA)
97A-01
97A-03
97A-03
O-204AE)
bfl 177
IR 92 0151
motorola 600 ssd
MTP2N50
mosfet ssd
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10549/BFAJC
Abstract: No abstract text available
Text: MOTOROLA M M SC íílEPIORY/ASI bSE D • b 3b72S l G O flW ñ T33 10549 O T O R O L A 1024-Bit Programmable Read Only Memory (PROM) ELECTRICALLY TESTED PER: MPG10549 This device is a 256-word x 4-bit field programmable read only memory (PROM). Prior to programming, all stored bit are at logic 1 (high) levels. The logic
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3b72S
10549/BXAJC
1024-Bit
MPG10549
256-word
10549/BFAJC
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3N204
Abstract: 3N205 3N3204
Text: MOTOROLA SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R DË|t,3b72SM 96D F 82613 D0flSbl3 D M A X I M U M R A T IN G S Sym bol Value Drain-Source Voltage VD S 25 Vdc Drain-Gate Voltage Vdg 30 Vdc mA Rating Unit Drain Current Id 50 Reverse Gate Current Ig
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3b725M
3N204
3N205
O-206AF)
3N3204
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2N5568
Abstract: motorola 2N5567 2N5567 MAC4111M MAC4121M MAC4121D MAC5570 MAC4121B MAC4121N MAC5569
Text: M O T O R O L A SC D IO DES /O PTO SSE D • fc>3b72S5 ÖÜflOTMfl 1 ■ A25i/S' Triacs Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the fullwave control o f ac loads in applications such as light dimmers, power supplies, heating
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2N5567,
MAC5569,
MAC4121B
2N5568,
MAC5570,
MAC4121D
T4101M,
MAC4111M,
MAC4121M
MAC4121N
2N5568
motorola 2N5567
2N5567
MAC4111M
MAC5570
MAC5569
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motorola U310
Abstract: j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310
Text: MOTOROLA SC { DIODES/OPTOJ 6367255 MOTOROLA SC 34 D iT|t:3b72S5 D IO D E S /O P T O 34C O D B f l O 1! ? 38047 h Q T * i I - IS ' FIELD-EFFECT TRANSISTORS DICE (continued) UC310 DIE NO. UNE SOURCE — DFM145 This die provides performance equal to or better than that of
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UC310
DFM145
motorola U310
j310 fet
fet j310
FET U310
U310 MOTOROLA
J309
U310 fet
U309
J308
J310
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F bflE ]> L 3b72S4 0 CHflb24 43b «M O Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP1N50 Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T M O S P O W E R FE T T h is T M O S P o w e r FET is d esig n ed fo r hig h v o ltag e, high speed
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3b72S4
CHflb24
MTP1N50
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
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mc145388
Abstract: MC145418 cp MC145418 T113AL MC145418 c
Text: DE I t>3b72S2 □ □ 7 i]741 1 MOTOROLA SC -CLOGIO Tfl 6367252 M O TO RO LA SC L O G IC 980 79741 - — M r - s h MC14528B O T O R O L A CM O S M SI DUAL M ONOSTABLE MULTIVIBRATOR (LOW-POWER COM PLEM ENTARY MOS) The M C14S28B multivibrator. It may produces an output
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3b72S2
MC14528B
C14S28B
mc145388
MC145418 cp
MC145418
T113AL
MC145418 c
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PDF
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Z14B
Abstract: MC14555B
Text: MOTOROLA SC {LOGIC} Tfl 6367252 M O TO RO LA SC D E ] L>3b72Sa □D7Tñ42 4 L O G IC 98D 79842 D~ MC14555B MC14556B MOTOROLA CMOS SSI DUAL BINARY TO 1-OF-4 DECODER/DEMULTIPLEXER a O W P O W E B .C O M P L E M E N T A R V M O S ) DUAL BINARY TO VOF-4 DECODER/DEMULTIPLEXER
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3b72Sa
MC14555B
MC14556B
14555B
14556B
Z14B
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sot89 m
Abstract: LA2927
Text: MOTOROLA SC XSTRS/R F a^D D MOTOROLA S E M IC O N D U C T O R f c>3b72S4 P07T T 2Ô =i Order this data sheet by M X V109/D T~" 0 * 7 -/ f TECHNICAL DATA M X V 109 S ilic o n T u n in g D io d e . designed for electronic tuning of A M receivers and high capacitance, high tuning
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3b72S4
V109/D
OT-89
MK145BP,
F--10
MXV109
sot89 m
LA2927
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PDF
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC DI ODE S/OPTO 2SE D t.3b72SS 0 0 6 1 1 3 7 2 • MCR202 thru MCR206 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for industrial/military applications such as relay and lamp drivers, small motor controllers and drivers for larger thyristors, and in
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OCR Scan
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3b72SS
MCR202
MCR206
b3b72SS
MCR206
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PDF
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2N3495
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F b * E fc>3b72S4 ]> □ □ ‘m a ' i T^2 M A X IM U M RATINGS Rating Symbol Value Unit Em itte r-C o lle cto r V oltage v CEO -1 2 0 V dc Co lle ctor-B ase V oltag e v CBO -1 2 0 V dc Em itter-Base V oltag e VebO - 4 .5 V dc C o lle c to r Current — Co ntinu ou s
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3b72S4
2N3495
2N3495
O-205AD)
2N3497
2N3497
O-206AA)
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