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    3n0408

    Abstract: 3N04
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPD50N04S3-08 Product Summary V DS 40 V R DS on ,max 8.0 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N04S3-08 PG-TO252-3-11 3N0408 3n0408 3N04

    3n0408

    Abstract: IPD50N04S3-08 SMD MARKING "68A" IPD50N04S3 ANPS071E PG-TO252-3-11
    Text: IPD50N04S3-08 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max 7.5 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50N04S3-08 PG-TO252-3-11 3N0408 3n0408 IPD50N04S3-08 SMD MARKING "68A" IPD50N04S3 ANPS071E PG-TO252-3-11