trailing SCHEMATIC dimmer
Abstract: LNK416 LNK417 eSIP-7f LNK419 Triac 3 kw dimmer schematic diagram ESIP-7C LNK413-419 LNK403-409 130 174 triac
Text: LNK403-409/413-419 LinkSwitch-PH LED Driver IC Family Single-Stage PFC, Primary-Side Constant Current Control and TRIAC Dimming/Non-Dimming Options Product Highlights Dramatically Simplifies Off-line LED Drivers • Single-stage combination of power factor correction and
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LNK403-409/413-419
LNK403-409
trailing SCHEMATIC dimmer
LNK416
LNK417
eSIP-7f
LNK419
Triac 3 kw dimmer schematic diagram
ESIP-7C
LNK413-419
130 174 triac
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LNK416
Abstract: til 112 optocoupler C 12 PH zener diode LNK413-419 LNK408 LNK413 lnk417 lnk419 LNK418 schematic circuit diagram of flyback PFC converter for LED
Text: LNK403-409/413-419 LinkSwitch-PH LED Driver IC Family Single-Stage PFC, Primary-Side Constant Current Control and TRIAC Dimming/Non-Dimming Options Product Highlights Dramatically Simplifies Off-line LED Drivers • Single-stage combination of power factor correction and
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LNK403-409/413-419
LNK403-409
LNK416
til 112 optocoupler
C 12 PH zener diode
LNK413-419
LNK408
LNK413
lnk417
lnk419
LNK418
schematic circuit diagram of flyback PFC converter for LED
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LNK418
Abstract: Triac 3 kw dimmer schematic diagram LNK417 LNK419 LNK416 LNK413 LNK403-409EG LNK414 LNK406 LNK413-419
Text: LNK403-409EG/413-419EG LinkSwitch-PH Family LED Driver IC, Single-Stage PFC, Primary-Side Constant Current Control and TRIAC Dimming/Non-Dimming Device Options Product Highlights Dramatically Simplifies Off-line LED Drivers • LNK403-409 family is optimized for flicker-free operation in
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LNK403-409EG/413-419EG
LNK403-409
LNK418
Triac 3 kw dimmer schematic diagram
LNK417
LNK419
LNK416
LNK413
LNK403-409EG
LNK414
LNK406
LNK413-419
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samsung loose tube cable 216 fiber
Abstract: samsung loose tube cable single mode 8FA-SL2M2S-024-T6N samsung ribbon Telcordia GR-20-CORE aramid rod flexible Absorbent material 8FA-SL2M2S-006-T6N NZDSF
Text: Samsung Electronics Fiberoptics products Figure-8 Cable Armored Design SA MS UNG Mult it ub e, Armored Figu re-8 Cable S C 8 F A 1 0 0 / 2 0 0 offers highly reliable, industry standard performance and accommodates the flexible and versatile needs of outside plant cables for today’s most demanding
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8FA200
1130E,
1-877-ssoptic/1-877-776-7842
samsung loose tube cable 216 fiber
samsung loose tube cable single mode
8FA-SL2M2S-024-T6N
samsung ribbon
Telcordia GR-20-CORE
aramid rod
flexible Absorbent material
8FA-SL2M2S-006-T6N
NZDSF
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PGA 101 pin kyocera
Abstract: No abstract text available
Text: SO C I ATI O IN DU ST RY AU T RoHS Compliant ISO 9001 Certified NT ME RN VE GO AS INTERCONNECTION SPECIALISTS G IN ANDON TED IMA MA G O N EDUCATION Table of Contents Applications Guide 2 NEC 7 Manufacturer Cross Reference Altasens 4 OSI Optoelectronics
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IS-09B
PGA 101 pin kyocera
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AO222
Abstract: ND3B FD2D2 FD3D2 STD150 FD2Q OA221 Samsung 546 NID4 FD4D2
Text: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.112ns, one fanout (SL = 0.00305pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2
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112ns,
00305pF)
ao211
ao2111
ao2111d2
ao211d2
ao211d4
ao21d2
ao21d4
ao221
AO222
ND3B
FD2D2
FD3D2
STD150
FD2Q
OA221
Samsung 546
NID4
FD4D2
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lpddr2
Abstract: lpddr2 datasheet samsung lpddr2 samsung* lpddr2 LPDDR2 1Gb Memory lpddr2 spec lpddr1 samsung toggle mode NAND lpddr2 samsung DDR3L lpddr2
Text: Green Memory Moving into Driver’s Seat Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing Mueez Deen, Director of Mobile Memory Marketing Steven Peng, SSD Technical Marketing Samsung Semiconductor, Inc. 1/? Agenda Industry Trends: IT & Mobile
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SAMSUNG DDR4
Abstract: samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung
Text: Optimizing Virtualization using Advanced Memory and Storage Technology Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing, Samsung Steve Weinger, Director, Flash Marketing, Samsung 1/? No.2 for 8 years in Semiconductor Industry *Source : Gartner March 2010
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320GB
SAMSUNG DDR4
samsung toggle mode NAND
samsung ddr3
RAM DDR2
samsung 30nm green ddr3
HS21XM
ddr2 ram slots for laptop
Samsung 8Gb MLC Nand flash
DIMM DDR4 socket
DDR3 DIMM spec samsung
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Untitled
Abstract: No abstract text available
Text: Introduction J apan Aviation Electronics Industry, Ltd. JAE is an international manufacturer and supplier of electronic components and systems. For over four decades, JAE has provided the electronics industry with solutions to complex design requirements. Since its
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10M807TA
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Connector Profile
Abstract: micro SD connector peza
Text: Introduction J apan Aviation Electronics Industry, Ltd. JAE is an international manufacturer and supplier of electronic components and systems. For over four decades, JAE has provided the electronics industry with solutions to complex design requirements. Since its
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10M807TA
Connector Profile
micro SD connector
peza
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1RF9540
Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Text: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY
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D0GS40Ö
IRF9140/
IRFP9140/9141
IRF9540/
9541Z
IRF/IRFP9140,
IRF9540
IRF/IRFP9141,
IRF9541
IRF/IRFP9142,
1RF9540
l 9143
irf 409
IRF 9540
L 9141
IRF95XX
IRF high current p-channel
IRF9140
IRF9140 TO 220
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KM416C1200AJ
Abstract: km44c1003cj kmm5361203aw
Text: DRAM MODULE 4 Mega Byte KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The
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KMM5361203AW/AWG
1Mx36
1Mx16
KMM5361203AW
42-pin
24-pin
72-pin
KM416C1200AJ
km44c1003cj
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KA2418
Abstract: low noise tone control circuits KA2419 circuit diagram of calling bell KA-241 ka24189 piezo buzzer
Text: LINEAR INTEGRATED CIRCUIT KA2418/KA2419 TONE RINGER WITH BRIDGE DIODE The KA2418/KA2419 is a monolithic integrated circuit designed to replace tne mechanical bell in telephone sets, in connection with an electro acoustical converter. The supply voltage is obtained from the AC ring
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KA2418/KA2419
KA2418/KA2419
KA2418
low noise tone control circuits
KA2419
circuit diagram of calling bell
KA-241
ka24189
piezo buzzer
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Untitled
Abstract: No abstract text available
Text: KMM5322000AV/AVG DRAM MODULES 2Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM532200QAV is a 2M bitsx32 Dynamic RAM high, density memory module. The Samsung KMM5322000AV consist of sixteen CMOS 1M x4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin
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KMM5322000AV/AVG
2Mx32
KMM532200QAV
bitsx32
KMM5322000AV
20-pin
72-pin
KMM5322000AV-
150ns
180ns
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Untitled
Abstract: No abstract text available
Text: KMM372C400BK/BS KMM372C41OBK/BS DRAM MODULE KMM372C400BK/BS / KMM372C41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C40 1 OB is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM372C400BK/BS
KMM372C41OBK/BS
KMM372C400BK/BS
KMM372C41
4Mx72
KMM372C40
300mil
48pin
168-pin
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KMM366S403CTL-GO
Abstract: No abstract text available
Text: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S403CTL
KMM366S403CTL
400mil
168-pin
000DIA
KM48S2020CT
KMM366S403CTL-GO
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IRFZ22 mosfet
Abstract: IRFZ25 IRFZ24 IRFZ20 IRFZ2 IRFZ22 irfz24 mosfet
Text: SAMSUNÛ ELECTRONICS INC b4E I> • 7 ^ 4 1 4 2 001244G Oâb IRFZ24/Z25 IRFZ20/Z22 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • SM6K TO-220 Lower Rds on Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure
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IRFZ24/Z25
IRFZ20/Z22
IRFZ20
IRFZ22
IRFZ24
IRFZ25
IRFZ22
G012444
IRFZ22 mosfet
IRFZ2
irfz24 mosfet
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409 samsung
Abstract: No abstract text available
Text: KS54HCTLS KS74HCTLS . KS54HCTLS KS74HCTLS 174 175 Hex/Quad D-type Flip-Flops with Clear 16 Dip Unit: mm The '1 7 4 contains six, and the '1 7 5 contains four D-type filp-flops all sharing a common clock and a common clear. The '1 7 4 features single rail outputs for every flip-flops whereas the '1 7 5 has complementary
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KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
409 samsung
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KS74HCTLS
Abstract: No abstract text available
Text: KS54HCTLS KS74HCTLS _ KS54HCTLS KS74HCTLS 174 175 Hex/Quad D-type Flip-Flops with Clear 16 Dip Unit: mm The '1 7 4 contains six, and the '1 7 5 contains four D-type filp-flops all sharing a common clock and a common clear. The '1 7 4 features single rail outputs for every flip-flops whereas the '1 7 5 has complementary
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KS54HCTLS
KS74HCTLS
90-xo
14-Pin
16-Pin
20-Pin
24-Pin
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C21DC
Abstract: No abstract text available
Text: S A M S U N G S E M I CONDU CT OR INC 05 D e | TTbMlME OOObSb? M | 8-Bit Bus Interface D-type Latches with 3-State Outputs g & S g f 8 4 5 /8 4 6 ~ Preliminary Specifications ! ' ' y - % - b i''0 5 FEATURE • DESCRIPTION • 3-state buffer-type outputs drive bus-Hnes directly
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KS74AC
7Tb414S
14-Pin
C21DC
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 1 A is a C M OS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM41C4001A
18-LEAD
20-LEAD
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d5101
Abstract: C5VI
Text: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM 2S6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17, 20ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : tOmA(Max ) Operating KM6164002A -1 5 : 210mA(Max.)
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KM6164002A,
KM6164002AE,
KM6164002AI
KM6164002A
210mA
205mA
200mA
KM6164002AJ
d5101
C5VI
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 b it X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM44C1000A
130ns
44C1000A-
150ns
20-LEAD
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samsung UC 40207
Abstract: samsung 943 UC 40207 dupont 943
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northeast North Central Northwest 3 6 5 5 N o rth First S tre e t 3 0 0 P a rk B o u le vard 1 1 9 R u s s e ll S tre e t S an José, C A 951 34 S u ite 2 1 0 L itlleto n , M A 0 1 4 6 0 T E L : 4 0 0 9 5 4 -7 0 0 0
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516J-273-5500
samsung UC 40207
samsung 943
UC 40207
dupont 943
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