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    PC-100

    Abstract: PC100 1998
    Text: 4M x 72 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 72403sSEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72403sSEM4G19T is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 1Mx8x2


    Original     		PDF PC-100 PC-100 72403sSEM4G19T 4Mx72 DS681-0 72403sSEM4G19T PC100 1998

    72 pin dimm

    Abstract: No abstract text available
    Text: 4M x 72 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72405sEGM2G19TD 168 Pin 4Mx72 EDO DIMM Unbuffered, 2k Refresh, 3.3V with SPD Pin Assignment General Description The 72405sEGM2G19TD is a 4Mx72 bit, 19 chip, 3.3V, 168 Pin DIMM module consisting of (18) 4Mx4


    Original     		PDF 72405sEGM2G19TD 4Mx72 DS391-0 72 pin dimm

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY* 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES n n n n n n n n n n n High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 21mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 125MHz WEDPN4M72V-XB2X 32MByte 256Mb) WEDPN4M72V

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original     		PDF KMM372F404CS KMM372F404CS 4Mx16 KMM372F404C 4Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: M372C0405CT0-C DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M372C0405CT0-C M372C0405CT0-C DRAM MODULE


    Original     		PDF M372C0405CT0-C 4Mx72 4Mx16 M372C0405CT0-C 4Mx72bits

    WEDPN4M72V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz, WEDPN4M72V-XBX

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 9/98 - last order; 3/99 last ship IBM11M1730BB1M x 72 E10/10, 3.3V, Au. IBM11M4730CH IBM11M4730CB IBM11M4730CF 4M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • 4Mx72 Fast Page Mode DIMM • Performance:


    Original     		PDF IBM11M1730BB1M E10/10, IBM11M4730CH IBM11M4730CB IBM11M4730CF 168-Pin 4Mx72 110ns

    WEDPN

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz* 32MByte 256Mb) 216-bit 100MHz 125MHz WEDPN

    DQ75

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz DQ75

    PQ62

    Abstract: No abstract text available
    Text: IBM11M4720D4M x 7212/11, 5.0V, AuMMDL08DSU-011033723. IBM11M4720D 4M x 72 DRAM MODULE Features • Optimized for byte-write parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx72 Fast Page Mode DIMM


    Original     		PDF IBM11M4720D4M AuMMDL08DSU-011033723. IBM11M4720D 4Mx72 110ns 130ns SA14-4602-03 PQ62

    DIMM 72 pin out

    Abstract: IBM11M4730C4M
    Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11N4845BB IBM11N4845CB 4M x 72 Super EOS Module Preliminary Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx72 Extended Data Out Page Mode DIMMS • Performance: -6R • System Performance Benefits:


    Original     		PDF IBM11M4730C4M E12/10, IBM11N4845BB IBM11N4845CB 4Mx72 104ns DIMM 72 pin out

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx72 125MHz WEDPN4M72V-XBX WEDPN4M72V-XBX 32MByte 256Mb) 100MHz 100MHz,

    Untitled

    Abstract: No abstract text available
    Text: IBM11 N4845BB IBM11 N4845CB Preliminary 4M x 72 Chip-Kill Protect ECC-on-DIMM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module System Performance Benefits: -Non buffered for increased performance • 4Mx72 Extended Data Out Page Mode DIMMs


    OCR Scan     		PDF IBM11 N4845BB N4845CB 4Mx72

    Untitled

    Abstract: No abstract text available
    Text: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung K M M 372V 400A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372V400A - 6


    OCR Scan     		PDF KMM372V400AK/AS KMM372V400AK/AS 4Mx72 KMM372V400A 110ns 130ns 48pin KM44V4000AK,

    Untitled

    Abstract: No abstract text available
    Text: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5


    OCR Scan     		PDF KMM372C412AK/A KMM372C412AK/AS 4Mx72 372C412A KMM372C412A 300mil 110ns 130ns

    KMM374S403BTN-G0

    Abstract: KMM374S403BTN-G2
    Text: KMM374S403BTN NEW JEDEC SDRAM MODULE KMM374S403BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S403BTN KMM374S403BTN 4Mx72 400mil 168-pin QQ375Q6 KMM374S403BTN-G0 KMM374S403BTN-G2

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF 4Mx72 4Mx16 372E404BS 4096cycles/64ms 100Max 54Max) KMM372E404BS -KM416C4104BS

    Untitled

    Abstract: No abstract text available
    Text: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V400A consists of eighteen


    OCR Scan     		PDF KMM372V400AK/AS 4Mx72 KMM372V400AK/AS KMM372V400A 300mii 48pin 168-pin

    samsung power module

    Abstract: KMM374S400BTN-G2 ADQ37 71b4
    Text: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S400BTN KMM374S400BTN 4Mx72 400mil 168-pin KMM374S400BTN-G8 KMM374S40OBTN-G0 KMM374S400BTN-G2 samsung power module ADQ37 71b4

    Untitled

    Abstract: No abstract text available
    Text: KM M 3 7 2 F 4 0 0 C K 2 / C S 2 KMM372F41 0CK2/CS2 DRAM MODULE 4Mx72 Buffered DIMM 4MX4 Base with ECC Revision 2.0 November 1997 -1 LE C TR Û M - Rev. 2.0 (Nov. 1997) KM M 3 7 2 F 4 0 0 C K 2 / C S 2 D R A M M O D U L E _ K M M 3 7 2 F 4 1 0 C K 2 / C S 2


    OCR Scan     		PDF KMM372F41 4Mx72 KMM372F40 150Max 350Max 89Max) KMM372F400CK2/CS2 4004C

    Untitled

    Abstract: No abstract text available
    Text: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41 OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM372F400BK/BS KMM372F41OBK/BS KMM372F400BK/BS KMM372F41 4Mx72 KMM372F40 300mil 48pin 168-pin

    926W

    Abstract: m0001d
    Text: ' H Y U N D A I -J ^ • HYM572A404CN-Series Buffered 4Mx72 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM572A404C N-Series is a 4Mx72-bit Extended Data Out mode CMOS DRAM module consisting of


    OCR Scan     		PDF HYM572A404CN-Series 4Mx72 HYM572A404C 4Mx72-bit HY5116404C 16-bit HYM572A404CNG/CTNG 168-Pin A0-A11, DQ0-DQ71) 926W m0001d

    CDG36

    Abstract: No abstract text available
    Text: •M Y U M D ftl > HYM572A404A N-Series 4Mx72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A404A Is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51164Q4A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed


    OCR Scan     		PDF HYM572A404A 4Mx72-bit 72-bit HY51164Q4A 16-bit HYM572A4Q4ATNG 572A404 4Mx72-blt HYM572A404ATNG CDG36