"Single-Port RAM"
Abstract: No abstract text available
Text: New Products FPGAs New Spartan-IIE FPGA Family for Digital Consumer Convergence Applications Spartan-IIE FPGAs offer significant performance improvements for nextgeneration consumer products. Table 2. The memory block can be used as 4096x1, 2048x2, 1024x4, 512x8, or
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LVCMOS18
"Single-Port RAM"
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VT6528
Abstract: 100BASE-X MDIO phy gvrp PHY 2078 ss smii MII switch "Spanning Tree"
Text: BLOCK DIAGRAM: Jumpers 2-pin EEPROM Initialization Controller MDCx, MDIO LED outputs PHY Management Interface LED Controller 8K+256 MAC Table 4K VLAN Table 1K Multicast Table 256 L2+ Rule/Action 4Mb Packet Buffer 4096x128-Byte Packet Buffer Management Unit
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4096x128-Byte)
8/16-bit
32-bit
VT6528,
VT6528
100BASE-X
MDIO phy
gvrp
PHY 2078
ss smii
MII switch
"Spanning Tree"
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY S I M I O N I IJ (. T () R maskm Radiation Hard 4096x1 Bit Static RAM S C10305FDS Issue 1.3 October 1990 Features • 3nm CMOS-SOS technology KOW Decoder • Latch-up free 64 x M Array • Fast access time 90ns typical • Total dose 10s rad (Si)
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4096x1
C10305FDS
5x101
1x101
Cobalt-60
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am2147 data
Abstract: AM2147-35 AM2147-45 AM2147-55 AM2147-70 AM21L47-45 AM21L47-55 CD000100 AM2147 cd018
Text: Am2147/Am21 L47 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS High speed — access times down to 35 ns maximum Automatic power-down when deselected Low power dissipation _ High output drive TTL compatible interface levels No power-on current surge GENERAL DESCRIPTION
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Am2147/Am21
4096x1
op000230
op000220
op000240
Am2148/Am2149/Am21
L48/Am21
am2147 data
AM2147-35
AM2147-45
AM2147-55
AM2147-70
AM21L47-45
AM21L47-55
CD000100
AM2147
cd018
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2147 RAM
Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
Text: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In
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4096x1)
2147L)
4096-bit
2147 RAM
D2147
2147
4096 bit static RAM
2147L
D2147L
613H
D2147-3
A2TE
CD2147
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4402B
Abstract: 4402 semi 4096X1 ON SEMI cross memory device sense amplifier RAM cells bit lines "select line" 4402a
Text: o rn ili O CIVII x ^n o a n 100, 150 NSEC STATIC D IF F E R E N T IA L OUTPUT N-MOS RAM 4096x1 e > i~ OTLJR □ □ □ □ □ STATIC - NO REFRESH OR CHARGE PUMP OSCILLATOR REQ UIRED 4096 WORD x 1 BIT O R G A N IZA TIO N 100 NSEC ACCESS, 300 NSEC CYCLE - 4402B
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4096x1
4402B
22-pin
2536-REV.
4402B
4402 semi
ON SEMI cross
memory device sense amplifier
RAM cells bit lines "select line"
4402a
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9141C
Abstract: L 9141 ess7
Text: Am9141 -Am91L41 4096x1 Static R/W Random Access Memories G E N E R A L D E S C R IP T IO N D IS T IN C T IV E C H A R A C T E R I S T IC S The A m 9 1 4 1 and A m 9 1 L 4 1 products are high perfor mance, low-power, 4k-bit, static, read/write random access
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4096x1
Am9141
-Am91L41
9141CDM
91L41CDM
250ns
9141DDC
91L41DDC
200ns
Am9141
9141C
L 9141
ess7
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k4096 equivalent
Abstract: transistor k4096 MK4096 ram K4096 WRITE THE FIVE IMPORTANT SPECIFICATION OF TRANSISTOR AC 126 MK4096 K4096 transistor MK4096-16 K4096 compatible MK4096-11
Text: MOSTEK 4096x1-BIT DYNAMIC RAM MK4096 K/N -6/16/11 FEATURES □ Industry standard 16-pin DIP configuration □ Inputs protected against static charge (available in plastic (N) and ceramic (K) packages) □ □ All inputs are low capacitance and T T L compatible
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MK4096
16-pin
16-pinm
k4096 equivalent
transistor k4096
MK4096 ram
K4096
WRITE THE FIVE IMPORTANT SPECIFICATION OF TRANSISTOR AC 126
K4096 transistor
MK4096-16
K4096 compatible
MK4096-11
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Untitled
Abstract: No abstract text available
Text: ADV M IC RO A m MEMORY IME d | 0ES75SÔ Q027S45 7 £ 1 Advanced Micro Devices 2 1 4 7 / A m 21 L 4 7 4096x1 Static RAM DISTINCTIVE C H A RA CTERISTICS • High speed — access times down to 35 ns maximum • Automatic power-down when deselected • Low power dissipation
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0ES75SÃ
Q027S45
4096x1
Am2147/Am21L47
OP000220
OP000440
OP000430
C3P000760
OP000240
OP000230
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S4017
Abstract: vmos S4017-3 4096X1
Text: PRELIMINARY AMI S4017 4 0 9 6 BIT 4096x1 HIGH SPEED STATIC VM O S RAM Features General Description □ The AMI S4017 is a high speed 4 0 9 6 b it fully static RAM organized as 4 0 9 6 o ne-bit w ords. The device is fully TTL com p atib le and has a single + 5V pow er
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4096x1)
S4017
S4017
vmos
S4017-3
4096X1
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4Kx1 SRAM
Abstract: KS000010 AM9044 AM9044B AM9044C AM9044D AM90L44B AM90L44C
Text: a Am9044/AM90L44 Advanced Micro Devices 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • Low operating and standby power • Access times down to 200 ns • Am9044 is a direct plug-in replacement for 4044 • High output drive — 4.0 mA sink current @ 0.4 V
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Am9044/AM90L44
4096x1
AmS044
4096x1.
OP000892
OP000902
OP000912
QP000922
OP000932
4Kx1 SRAM
KS000010
AM9044
AM9044B
AM9044C
AM9044D
AM90L44B
AM90L44C
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3539
Abstract: 4725B 4710B 4720B F16K3 F16K4 F16K5 M40272 M40273 M40274
Text: 4096x1 4096x1 - •n fO «i MOS 16,384x1 CO ro 1024x4 -fck M 40272 cn 4096x1 o> 4096x1 -4 16,384x1 Item S CD Ô o 3 a Description H > z o Access Time ns Max Cycle Time ns (Min) 2 > o o m CO Power Dissipation mW (Max) S 2 m 5 X o O CD 3 O) ro O) 03 oo 03
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1024x4
F2114171
4096x1
M40272
M40273
M40274
M40275
3539
4725B
4710B
4720B
F16K3
F16K4
F16K5
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4027 ram
Abstract: 4096X1 4027 pin diagram CD 4027 MK4027 MK4027-1 MK4027-2 MK4027-3 4096X1-BIT MK4096
Text: MOSTEK 4096x1-BIT DYNAMIC RAM M K 40 27 J/N -2/3 FEATURES □ Industry standard configuration □ 120ns access time, 150ns access time, 200ns access time, □ Improved performance w ith "gated CAS", "RAS o n ly " refresh and page mode capability 16-pin DIP (MK 4096)
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4096x1-BIT
MK4027
16-pin
120ns
320ns
MK4027-1)
150ns
MK4027-2)
200ns
4027 ram
4096X1
4027 pin diagram
CD 4027
MK4027-1
MK4027-2
MK4027-3
MK4096
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M4027
Abstract: 4725B 4710B 4720B F16K3 F16K4 F16K5 M40272 M40273 M40274
Text: •n fO «i MOS 4096x1 1024x4 4096x1 - M 40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn M40273 Item 9 00 1. 03 03 > DEVICE NO. S CD Ô o 3 a Description H > z o Access Time ns (Max) Cycle Time ns (Min) 2 > o o m CO w Power Dissipation mW (Max) S 2 m 5 o X O
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1024x4
F2114171
4096x1
M40272
M40273
M40274
M40275
M4027
4725B
4710B
4720B
F16K3
F16K4
F16K5
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L41C
Abstract: AM9141BDC AM91L41CDC
Text: Am9141 *Am91L41 4096x1 Static R/W Random Access Memories D IS T IN C T IV E C H A R A C T E R IS T IC S G E N E R A L D E S C R IP T IO N • • • • • T h e A m 9 1 4 1 and A m 9 1 L 4 1 p ro d u c ts are high p e rfo r m ance, lo w -p o w e r, 4 k - b it, s ta tic , re a d /w rite ra n d o m access
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Am9141
-Am91L41
4096x1
200ns
578mW
368mW
91L41
400mV
L41CDC
L41C
AM9141BDC
AM91L41CDC
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bk p36
Abstract: 1024x1 static ram 16x4-Bit 4710B 4720B 4725B F16K3 F16K4 F16K5 M40272
Text: •n fO «i MOS 4096x1 1024x4 4096x1 - M40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item o 0 o Organization s o (O Ô o 3 a Description Access Time ns (Max Cycle Time ns (Min) Power Dissipation mW (Max) S A H > z o 2 > o o m CO 2 m 5 o X k k k k k oo O 03
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1024x4
F2114171
4096x1
M40272
M40273
M40274
M40275
bk p36
1024x1 static ram
16x4-Bit
4710B
4720B
4725B
F16K3
F16K4
F16K5
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4720B
Abstract: F16K4 4710B 4725B F16K3 F16K5 M40272 M40273 M40274 M40275
Text: •n fO «i MOS 4096x1 1024x4 4096x1 - M 40272 16,384x1 CO ro 4096x1 -fck 4096x1 cn Item S CD Ô o 3 a Description H > z o Access Time ns Max Cycle Time ns (Min) 2 > o o m CO Power Dissipation mW (Max) S 2 m 5 X o O CD 3 O) ro O) 03 oo 03 o> M45 M44 M43
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1024x4
F2114171
4096x1
M40272
M40273
M40274
M40275
4720B
F16K4
4710B
4725B
F16K3
F16K5
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4096X1-BIT
Abstract: HM6504 IM6504 MCM146504 4096X1
Text: g M O T O R O L A Product Preview CMOS LSI 4096X1-BIT STATIC RAN D O M ACCESS M EM O R IES (L O W -P O W E R C O M P L E M E N T A R Y M O S ) The M C M 1 4 6 5 0 4 is a 4 0 9 6 X 1 *b it static random access memory, fabricated with high density, high reliability C M O S silicon-gate
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MCM146504
4096X1-BIT
MCM146504
18-Pin
HM6504
IM6504
4096X1
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FAIRCHILD 40963
Abstract: CI 4096 led strobe light circuit diagram 4096DC fairchild mos 40964 vqb 71
Text: i 1 \ , /• , n i \ (T \ j . ^ ' 4096 4096x1 DYNAMIC RANDOM ACCESS MEMORY G E N E R A L D E S C R IP T IO N — Th e 4Q96DC is a 4 0 9 6 b it dynam ic Random Access Mem o ry organized as 4 0 9 6 one-bit words. T h is device is designed u tilizing the single transistor
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4096x1
4096DC
16-pin
I4096-2DC)
FAIRCHILD 40963
CI 4096
led strobe light circuit diagram
fairchild mos
40964
vqb 71
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a8le
Abstract: AM9140ADC 9140B AM9140ADM
Text: Am9140 •Am91L40 4096x1 Static R/W Random Access Memories GENERAL DESCRIPTION DISTINCTIVE CHARACTERISTICS The Am9140 and Am91L40 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 4096 words by 1 bits per
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Am9140
Am91L40
4096x1
200ns
578mW
368mW
91L40
400mV
MIL-STD-883
a8le
AM9140ADC
9140B
AM9140ADM
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M90-44
Abstract: cd018 AM0OL44B
Text: Am9044/AM90L44 Advanced Micro Devices 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • • • • • Low operating and standby power Access times down to 200 ns Am9044 is a direct plug-in replacement for 4044 High output drive — 4.0 mA sink current @ 0.4 V
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Am9044/AM90L44
4096x1
Am9044
WF000191
P000902
P000912
OP000922
P000932
M90-44
cd018
AM0OL44B
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AM21
Abstract: No abstract text available
Text: a Am21 L41 Advanced Micro Devices 4096x1 Static RAM DISTINCTIVE CHARACTERISTICS • • • Fully static storage and interface circuitry Automatic power-down when deselected Low power dissipation - Am21L41; 220 mW active, 27.5 mW power down • High output drive
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4096x1
Am21L41
4096-bit,
Am27C128
s044400
WF000241
F000221
Am27L41
AM21
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4200D
Abstract: WRITE THE FIVE IMPORTANT SPECIFICATION OF TRANSISTOR AC 126 4096X1-BIT
Text: MOSTEK 4096x1-BIT DYNAMIC RAM MK4200 K/N -11/16 FE A TU R E S □ In d u stry standard 16-pin DIP co n fig u ra tio n (available in plastic (N) and ceramic (K) packages) □ A ll inputs are lo w capacitance and T T L com p atib le, except RAS (MOS level) □
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4096x1-BIT
MK4200
16-pin
MK4200,
4200D
WRITE THE FIVE IMPORTANT SPECIFICATION OF TRANSISTOR AC 126
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Untitled
Abstract: No abstract text available
Text: CMOS SyncFlFO 256 X 18, 512 X 18,1024 x 18, 2048 x 18 and 4096x18 IDT72205LB IDT72215LB IDT72225LB IDT72235LB IDT72245LB Integrated Device Technology, inc. FEATURES: • • • • • • • • • • • • • 256 x 18-bit organization array 72205LB
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4096x18
IDT72205LB
IDT72215LB
IDT72225LB
IDT72235LB
IDT72245LB
18-bit
72205LB)
72215LB)
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