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    40N06 Search Results

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    40N06 Price and Stock

    Vishay Siliconix SQD40N06-14L_GE3

    MOSFET N-CH 60V 40A TO252AA
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    DigiKey SQD40N06-14L_GE3 Digi-Reel 5,822 1
    • 1 $2.43
    • 10 $1.563
    • 100 $2.43
    • 1000 $0.78681
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    SQD40N06-14L_GE3 Cut Tape 5,822 1
    • 1 $2.43
    • 10 $1.563
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    SQD40N06-14L_GE3 Reel 4,000 2,000
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    New Advantage Corporation SQD40N06-14L_GE3 2,000 1
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    • 10000 $0.8371
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    Taiwan Semiconductor TSM340N06CH-X0G

    MOSFET N-CHANNEL 60V 30A TO251
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    DigiKey TSM340N06CH-X0G Tube 5,295 1
    • 1 $0.88
    • 10 $0.88
    • 100 $0.42413
    • 1000 $0.32067
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    Infineon Technologies AG IAUZ40N06S5N050ATMA1

    MOSFET N-CH 60V 40A TSDSON-8-33
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    DigiKey IAUZ40N06S5N050ATMA1 Digi-Reel 4,419 1
    • 1 $1.7
    • 10 $1.079
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    Mouser Electronics IAUZ40N06S5N050ATMA1 32,788
    • 1 $0.65
    • 10 $0.649
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    Newark IAUZ40N06S5N050ATMA1 Cut Tape 2,890 1
    • 1 $0.759
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    Rochester Electronics IAUZ40N06S5N050ATMA1 28,795 1
    • 1 $0.4858
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    • 100 $0.4567
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    Chip1Stop IAUZ40N06S5N050ATMA1 Cut Tape 4,370
    • 1 $0.361
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    EBV Elektronik IAUZ40N06S5N050ATMA1 19 Weeks 5,000
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    Infineon Technologies AG IAUZ40N06S5L050ATMA1

    MOSFET_)40V 60V) PG-TSDSON-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IAUZ40N06S5L050ATMA1 Cut Tape 3,553 1
    • 1 $1.7
    • 10 $1.079
    • 100 $1.7
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    Mouser Electronics IAUZ40N06S5L050ATMA1 1,045
    • 1 $1.33
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    Newark IAUZ40N06S5L050ATMA1 Cut Tape 5,945 5
    • 1 $1.41
    • 10 $0.953
    • 100 $0.667
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    Rochester Electronics IAUZ40N06S5L050ATMA1 2,941 1
    • 1 $0.4858
    • 10 $0.4858
    • 100 $0.4567
    • 1000 $0.4129
    • 10000 $0.4129
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    EBV Elektronik IAUZ40N06S5L050ATMA1 19 Weeks 5,000
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    onsemi NVLJWD040N06CLTAG

    MOSFET 2N-CH 60V 5.5A 6WDFNW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NVLJWD040N06CLTAG Reel 3,000 3,000
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    NVLJWD040N06CLTAG Cut Tape 3,000 1
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    NVLJWD040N06CLTAG Digi-Reel 3,000 1
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    Mouser Electronics NVLJWD040N06CLTAG 3,000
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    Avnet Silica NVLJWD040N06CLTAG 17 Weeks 3,000
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    EBV Elektronik NVLJWD040N06CLTAG 18 Weeks 3,000
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    40N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MOSFET MTH40N10

    Abstract: 40n06 MTH40N10 40n08 40n10 MTH40N08 40N05 40n0
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M T H 40N 08 M T H 40N 10 M T H 40N 05 M T H 40N 06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S TM O S POWER FETs and AMPERES These TM O S Pow er FETs are designed fo r lo w


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    PDF 1002C TH40N 06----MTH40N MOSFET MTH40N10 40n06 MTH40N10 40n08 40n10 MTH40N08 40N05 40n0

    40N06

    Abstract: 40N10 40n08 40N05 MTH40N10 40n0 MTH40N05 MTH40N08 MTH40N06
    Text: M T H 40N 08 M T H 40N 10 MTH40IM05 M T H 40N 06 Designer's Data Sheet Pow e r Field Effect T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S PO W ER FETs and A M P E R E S rDS on = 0.04 O H M 80 and 100 V O LT S rD S(on) = 0-028 O H M 50 and 60 V O LT S


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    PDF MTH40N08 MTH40N1Q MTH40N05 MTH40N06 O-218AC 40N06 40N10 40n08 40N05 MTH40N10 40n0 MTH40N06

    MTH13N50

    Abstract: MTH40N10 MTH7N50 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth5n100 mth7n50 Transistor
    Text: POWER TRAN SISTO RS — TM O S PLASTIC continued Plastic TM OS Power MO SFETs — TO-218AC G D S rDS(on) @ <D V BR(DSS) (Volts) Min (Ohms) Max (Amp) 1000 3 2.5 Device 950 900 550 500 450 400 350 MTH5N100 'D(Cont) (Amp) M ax PD @ Te = 25°C (W ans) M ax 5


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    PDF O-218AC MTH5N100 MTH5N95 MTH6N90 MTH6N85 MTH6N60 MTH8N60 MTH6N55 MTH8N55 MTH7N50 MTH13N50 MTH40N10 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth7n50 Transistor