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Abstract: No abstract text available
Text: 40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed
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40t321
Abstract: GT40T321 gt40t
Text: 40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed
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GT40T321
40t321
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40t321
Abstract: GT40T321 ic401
Text: 40T321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT 40T321 ○ 民生用 ○ 電圧共振インバータスイッチング専用 ○ 第６世代 単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。
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GT40T321
2-16C1C
40t321
GT40T321
ic401
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GT40T321
Abstract: No abstract text available
Text: 40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed
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Original
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PDF
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GT40T321
GT40T321
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