30-pin simm memory
Abstract: 433 Mc MC-41256A9B MC-41256 30 pin simm SIMM 30-pin MC-41256A9-12 MC-41256A9-15 uPD41256 "30 pin simm"
Text: NEC M C -4 1 2 5 6 A 9 2 6 2 , 1 4 4 x 9 -B IT D Y N A M IC N M O S R A M M O D U LE NEC Electronics Inc. P R E L IM IN A R Y IN F O R M A T IO N Pin C o n fig u ra tio n s D escrip tio n The M C -41256A9 is a 262,144-word by 9 -b it NM OS d y n a m ic RAM m odule, designed to operate from a
|
OCR Scan
|
PDF
|
MC-41256A9
144-word
uPD41256
MC-41256A9
83-001979B
30-pin simm memory
433 Mc
MC-41256A9B
MC-41256
30 pin simm
SIMM 30-pin
MC-41256A9-12
MC-41256A9-15
"30 pin simm"
|
MC41256A8B12
Abstract: MC41256A8B-12 41256 MC-41256A8A-12 MC-41256A8-15
Text: SEC MC-41256A8 262,144 x 8-BIT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. Description Pin C onfigurations T h e M C -4 1 2 5 6 A 8 is a 262,144-w ord by 8 -bit N M O S R A M m o d u le d e s ig n e d to op erate from a s in g le + 5 -v o lt p o w e r sup p ly. A d v a n c e d d y n a m ic circuitry, in c lu d in g a
|
OCR Scan
|
PDF
|
MC-41256A8
30-Pin
MC-41256A8A
144-w
MC-41256A8
MC41256A8B12
MC41256A8B-12
41256
MC-41256A8A-12
MC-41256A8-15
|
Untitled
Abstract: No abstract text available
Text: SEC MC-41256A4 262,144 x 4-BIT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATON Description Pin Configuration T he M C -41256A4 is a 262,144-w ord by 4 -b it NM OS d y n a m ic RAM m odule, d e signed to o p erate fro m a sin g le + 5 V pow er supply. A dvanced d yn a m ic c irc u itry ,
|
OCR Scan
|
PDF
|
MC-41256A4
-41256A4
144-w
22-Pin
MC-412S6A4A
C-41256A4
|
Untitled
Abstract: No abstract text available
Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a
|
OCR Scan
|
PDF
|
MC-41256A9
144-word
pPD41256
MC-41256A9
|
MC-41256A9B
Abstract: D41256 41256A MC41256A9A12 MC-41256A9B-12 l0830
Text: S ÍF C M C -41256A 9 2 6 2 ,1 4 4 X 9-B IT d y n a m ic n m o s r a m m o d u le N E C Electronics Inc. Description Pin Configurations T h e M C -4 1 2 5 6 A 9 is a 2 6 2 ,1 4 4 -w o rd b y 9 -b it N M O S R A M m o d u le d e s ig n e d to o p e ra te fro m a s in g le + 5 - v o lt
|
OCR Scan
|
PDF
|
-41256A
30-Pln
MC-41256A9A
004116B
B3-004128B
83-001660B
MC-41256A9B
D41256
41256A
MC41256A9A12
MC-41256A9B-12
l0830
|
256KD
Abstract: No abstract text available
Text: NEC M C -41256A 5 2 6 2 ,1 4 4 x 5-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION /^ q k Í ^ April 1986 c * sp j>Mrv> Pin Configuration Description T h e M C -4 1 2 5 6 A 5 is a 2 62,144-w o rd by 5 -b it N M O S d yn am ic R A M m odule, designed to o p erate from a
|
OCR Scan
|
PDF
|
MC-41256A5
144-word
/PD41256
256KD
|
AS11D
Abstract: C-41256A8 30-pin SIMM
Text: NEC MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8-bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a
|
OCR Scan
|
PDF
|
MC-41256A8
30-Pin
144-word
/iPD41256
MC-41256A8
83IH-6594B
AS11D
C-41256A8
30-pin SIMM
|
D41256
Abstract: MC-41256 41256 MC-41256A8-15 MC-41256A8-12 30-pin simm memory "30 pin simm"
Text: SEC MC-41256A8 262,144 x 8-BIT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations T he M C-41256A8 is a 262,144-w ord by 8 -b it NM OS d y n a m ic RAM m odule, designed to operate fro m a sin g le + 5 V pow er supply. Advanced d yn a m ic circ u itry ,
|
OCR Scan
|
PDF
|
MC-41256A8
144-word
MC-41256A8
D41256
MC-41256
41256
MC-41256A8-15
MC-41256A8-12
30-pin simm memory
"30 pin simm"
|
NEC IC D 553 C
Abstract: D41256 41256
Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module W NEC Electronics Inc. Description Pin Configuration T h e M C -4 1 2 5 6 A 9 is a 262,144-w ord by 9-bit DRAM m o d ule desig ned to o p e ra te from a single + 5-volt po w er 30-Pin SIMM supply. A d v an c ed d y n am ic N M O S circuitry, including a
|
OCR Scan
|
PDF
|
MC-41256A9
144-w
cycles1256A9
NEC IC D 553 C
D41256
41256
|
MC-41256A8-10
Abstract: MC-421000A9 1MX9
Text: N E C 30E D ELECTRONICS INC NEC • b457S2S DOSSIER b ■ T '+ b - Z Z - o l MEMORY PRODUCTS Dynam ic R A M M odules Maximum Power Dissipation mW Organization Process Access Time (ns) 8Kx9 100K 11 13 -4 .5 8000 8000 (Note 2) 42 MC-41256A8-10 MC-41256A8-12
|
OCR Scan
|
PDF
|
MC-163
MC-41256A8-10
MC-41256A8-12
MC-41256A9-10
MC-41256A9-12
MC-421000A8-80
MC-421000A8-10
C-421OOOA8-12
MC-4210O0B8-80
MC-42100
MC-421000A9
1MX9
|
M41256A
Abstract: MSC2304 MSC2304-10YS9 MSC2304-15YS9 41256A DRAM MSC2304-12YS9
Text: OKI semiconductor MSC2304YS9/KS9_ 262,144 BY 9 BIT DYNAMIC RAM MODULE < Page Mode Type > GENERAL DESCRIPTION The O ki M S C 2 3 0 4 Y S 9 /K S 9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords x 9 bit NM OS dynam ic random a cce ss m em ory com posed of nine 2 5 6 K DRAM s in p la stic leaded c h ip carrier M S M 41256A JS . The
|
OCR Scan
|
PDF
|
MSC2304YS9/KS9_
1256A
MSM41256AJS;
MSC2304YS9/KS9
2304YS9
18jiimt)
MSC2304YS9/KS9
SC2304YS9/KS9
M41256A
MSC2304
MSC2304-10YS9
MSC2304-15YS9
41256A DRAM
MSC2304-12YS9
|
Untitled
Abstract: No abstract text available
Text: NEC M C -4 1 2 5 6 A 9 2 6 2 ,1 4 4 X 9-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-41256A9 is a 262,144-word by 9-bit NMOS dynam ic RAM module, designed to operate from a single +5 V power supply. Advanced dynamic circuitry,
|
OCR Scan
|
PDF
|
MC-41256A9
144-word
eight/jPD41256
1664B
|
Untitled
Abstract: No abstract text available
Text: M E C M C-41256A8 2 6 2 ,1 4 4 X 8-B IT d y n a m ic n m o s r a m m o d u le . NEC Electronics Inc. Description Pin Configurations T h e M C -4 1 2 5 6 A 8 is a 2 6 2 ,1 4 4 -w o rd b y 8 -b it N M O S R A M m o d u le d e s ig n e d to o p e ra te fro m a s in g le + 5 - v o lt
|
OCR Scan
|
PDF
|
C-41256A8
83-001660B
|
C-41256A8
Abstract: No abstract text available
Text: M it W MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8 -bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a
|
OCR Scan
|
PDF
|
MC-41256A8
30-Pin
144-word
C-41256A8
/PD41256
MC-41256A8
|
|
|
tc511000
Abstract: tda 3611 d0251 TC8832F D025137 2pcs01 OVR BT2 A23 1101-01 csb655 TC8832
Text: TC8832F-1 •i TO SHI BA 1. G 0 2 5 1 3 3 143 m j O S 3 UC/UP b4E T> GENERAL T h e T C 8 8 3 2 F is a sin g le chip C M O S L S I for voice recording / play-back u sin g the A D M ( A d ap tive D elta M o d u latio n ). I t com poses a voice recording sy stem w ith a d yn am ic R A M for voice m em ory and
|
OCR Scan
|
PDF
|
TC8832F-1
QQ25133
TC8832F
TC8832F-78
CSB655
TC8832F-79
QFP60-P-1414A)
25MAX
tc511000
tda 3611
d0251
D025137
2pcs01
OVR BT2
A23 1101-01
csb655
TC8832
|
2SKI34
Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t
|
OCR Scan
|
PDF
|
J22587
90-3D
2SKI34
TA8515
westinghouse
TA8509F
CTC 313 transistor pin diagram
TOSHIBA DIODE CATALOG
T6950
TD62803
LSI LOGIC product catalog
TC8576
|
transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
|
OCR Scan
|
PDF
|
N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
|
M41256A
Abstract: No abstract text available
Text: O K I semiconductor 41256A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki 41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications
|
OCR Scan
|
PDF
|
MSM41256A
144-WORD
MSM41256A
18pin
M41256A
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6310 PCM Recording and Playback IC GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback IC manufactured using OKI's low power CMOS silicon gate technology. The MSM6310 is designed for endless loop recording by 8-bit PCM. The internal circuit is made up of three units. The first one is an input unit with a line amplifier, low
|
OCR Scan
|
PDF
|
MSM6310
MSM6310
256KW
MSM41256A;
2200Hz
3600Hz
1700Hz
2700Hz
|
MN12261
Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Text: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating
|
OCR Scan
|
PDF
|
N1224
16-DIP
18-DIP
SO-18D
14-DlP
MN12261
MN1225
N12c
M5M4400
256K RAM HM62256
47464
mn4464
n1224
MN41256A
44256 ram
|
M41256A
Abstract: 41256A
Text: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki 41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications
|
OCR Scan
|
PDF
|
144-WORD
MSM41256A
M41256A
41256A
|
41256A
Abstract: No abstract text available
Text: O K I semiconductor MSM41257A 262,144-WORD x 1-BIT DYNAMIC RAM NIBBLE MODE TYPE _ GENERAL DESCRIPTION The Oki MSM41257A is a fully decoded, dynamic NMOS random access memory organized as 262,144 words x 1 bit. The design is optimized for high-speed, high performance applications
|
OCR Scan
|
PDF
|
MSM41257A
144-WORD
MSM41257A
41256A
|
N42C
Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
Text: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A
|
OCR Scan
|
PDF
|
N41256A
1256A
N41257A-08
256/4ms
6-P-0300A
QFJ018-P-R290
ZIP016-P-0300
DIP016-P-0300A
N42C
N41C
MN41256a
N4146
4141-00
41410
TSOP044-P0400A
N4141
|
M41256A
Abstract: MM41256A
Text: mmmm TOSHIBA MOS MEMORY PRODUCTS 2 6 2 , 1 4 4 W O R D X1 BIT D Y N A M IC RAM SILICON M O N O L IT H IC N -C H A N N E L SILICON GATE M O S T M M 4 1 2 5 6 A P /A T /A Z -1 0 , T M T M M 4 1 2 5 6 A P /A T /A Z -1 5 M 4 1 2 5 6 A P /A T /A Z -1 2 DESCRIPTION
|
OCR Scan
|
PDF
|
TMM41256AP/AT/AZ-10,
TMM41256AP/AT/AZ-12
TMM41256AP/AT/AZ-15
M41256A
MM41256A
|
