Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT42M/43M Series Small-Signal Schottky Barrier Diodes SBT42M/43M series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology
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SBT42M/43M
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SBT43
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT42M/43M Series Small-Signal Schottky Barrier Diodes SBT42M/43M series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology
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SBT42M/43M
SBT43
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Untitled
Abstract: No abstract text available
Text: FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET –20V, –4.5A, 43mΩ Features General Description ̈ Max rDS on = 43mΩ at VGS = –4.5V, ID = –4.5A This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
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FDC638APZ
FDC638APZ
FDC638ASPZ
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638Z
Abstract: FDC638APZ MOSFET 20V 45A
Text: FDC638APZ P-Channel 2.5V PowerTrench Specified MOSFET –20V, –4.5A, 43mΩ Features General Description Max rDS on = 43mΩ at VGS = –4.5V, ID = –4.5A This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
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FDC638APZ
72ains
FDC638APZ
FDC638ASPZ
638Z
MOSFET 20V 45A
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0958A MCH6336 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 43mΩ, Single MCPH6 Features • • Ultrahigh-speed switching Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C
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ENA0958A
MCH6336
PW10s,
1200mm2
A0958-7/7
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SSM6K403TU
Abstract: No abstract text available
Text: SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU ○ Power Management Switch Applications ○ High-Speed Switching Applications UNIT: mm 2.1±0.1 Ron = 43mΩ max (@VGS = 1.8V) Ron = 32mΩ (max) (@VGS = 2.5V) 2 5 3 4 0.7±0.05
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SSM6K403TU
SSM6K403TU
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PDP-100
Abstract: No abstract text available
Text: Thick Film Chip Resistors NRCE Series FEATURES • EXTENDED VALUE RANGE 43MΩ ~ 4.7GΩ & PRECISION TOLERANCES • EIA STANDARD SIZING 0603, 0805 and 1206 • METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE .(CERMET) .PROVIDES UNIFORM QUALITY AND HIGH RELIABILITY
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NRCE06
NRCE10
NRCE12
75Meg
820Meg
PDP-100
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SSM6K403TU
Abstract: marking 66m
Text: SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU ○ Power Management Switch Applications ○ High-Speed Switching Applications UNIT: mm 2.1±0.1 Ron = 43mΩ max (@VGS = 1.8V) Ron = 32mΩ (max) (@VGS = 2.5V) 2 5 3 4 0.7±0.05
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SSM6K403TU
SSM6K403TU
marking 66m
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kdr 5000
Abstract: SSM3K311T
Text: SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T ○ High-SPEED Switching Applications Unit: mm • Low on-resistance : Ron = 43mΩ max. (@VGS = 4V) +0.2 2.8-0.3 : Ron = 32mΩ (max.) (@VGS = 10V) Unit Drain–source voltage
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SSM3K311T
kdr 5000
SSM3K311T
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Untitled
Abstract: No abstract text available
Text: SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications High-Speed Switching Applications UNIT: mm 2.1±0.1 Low ON-resistance:Ron = 66mΩ max (@VGS = 1.5V) Ron = 43mΩ (max) (@VGS = 1.8V) 2 5 3
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SSM6K403TU
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kdr 5000
Abstract: SSM3K311
Text: SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T ○ High-Speed Switching Applications Unit: mm • Low ON-resistance: Ron = 43mΩ max (@VGS = 4V) +0.2 2.8-0.3 : Ron = 32mΩ (max) (@VGS = 10V) +0.2 1.6-0.1 0.4±0.1 4 V drive
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SSM3K311T
kdr 5000
SSM3K311
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ENA1754A
ATP112
1450pF
PW10s)
PW10s,
--10V,
--13A
A1754-7/7
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Untitled
Abstract: No abstract text available
Text: Thick Film Chip Resistors NRCE Series FEATURES • EXTENDED VALUE RANGE 43MΩ ~ 4.7GΩ & PRECISION TOLERANCES • EIA STANDARD SIZING 0603, 0805 and 1206 • METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE .(CERMET) .PROVIDES UNIFORM QUALITY AND HIGH RELIABILITY
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NRCE06
NRCE10
NRCE12
75Meg
820Meg
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Untitled
Abstract: No abstract text available
Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications
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ZXTN07012EFF
OT23F,
ZXTP07012EFF
OT23F
OT23F
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1242B CPH6442 N-Channel Power MOSFET http://onsemi.com 60V, 6A, 43mΩ, Single CPH6 Features • • • Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage
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ENA1242B
CPH6442
900mm2Ã
A1242-7/7
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Untitled
Abstract: No abstract text available
Text: Thick Film Chip Resistors NRCE Series FEATURES • EXTENDED VALUE RANGE 43MΩ ~ 4.7GΩ & PRECISION TOLERANCES • EIA STANDARD SIZING 0603, 0805 and 1206 • METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE .(CERMET) .PROVIDES UNIFORM QUALITY AND HIGH RELIABILITY
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NRCE06
NRCE10
NRCE12
75Meg
820Meg
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Untitled
Abstract: No abstract text available
Text: Thick Film Chip Resistors NRCE Series FEATURES • EXTENDED VALUE RANGE 43MΩ ~ 4.7GΩ & PRECISION TOLERANCES • EIA STANDARD SIZING 0603, 0805 and 1206 • METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE .(CERMET) .PROVIDES UNIFORM QUALITY AND HIGH RELIABILITY
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NRCE06
NRCE10
NRCE12
75Meg
820Meg
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1529B CPH6350 P-Channel Power MOSFET http://onsemi.com –30V, –6A, 43mΩ, Single CPH6 Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage
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ENA1529B
CPH6350
PW10s,
900mm2
A1529-6/6
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TRANSISTOR MARKING 1d3
Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF
Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications
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ZXTN07012EFF
OT23F,
ZXTP07012EFF
OT23F
OT23F
TRANSISTOR MARKING 1d3
ZXTN07012EFF
ZXTN07012EFFTA
ZXTP07012EFF
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Untitled
Abstract: No abstract text available
Text: PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 150V 43m @VGS = 10V 25nC 1 8 S 2 7 S 3
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IRF7815PbF
110mH,
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kdr 5000
Abstract: SSM3K311T
Text: SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T ○ High-Speed Switching Applications Unit: mm • Low ON-resistance: Ron = 43mΩ max (@VGS = 4V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit Drain–source voltage VDS 30 V Gate–source voltage
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SSM3K311T
kdr 5000
SSM3K311T
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100C
Abstract: TS16949 ZXTN19100CG ZXTN19100CGTA ZXTP19100CG
Text: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19100CG
OT223
ZXTP19100CG
OT223
D-81541
100C
TS16949
ZXTN19100CG
ZXTN19100CGTA
ZXTP19100CG
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology
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LN2306LT1G
S-LN2306LT1G
AEC-Q101
236AB)
LN2306LT3G
S-LN2306LT3G
3000/Tape
10000/Tape
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Untitled
Abstract: No abstract text available
Text: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN19100CG
OT223
ZXTP19100CG
OT223
D-81541
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