Untitled
Abstract: No abstract text available
Text: Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Subminiature and Microminiature D Connectors Stacked Connectors AMP 1-440166-1 Active Active Not Reviewed for ELV/RoHS Compliance Tyco Electronics P/N: 1-440166-1
|
Original
|
|
PDF
|
str w 6554 a
Abstract: STR 6554 a
Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer
|
Original
|
CGH40010
CGH40010
CGH40010,
CGH40
40010P
str w 6554 a
STR 6554 a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band
|
Original
|
CGHV40030
CGHV40030
CGHV40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide
|
Original
|
CGH35015
CGH35015
CGH3501
35015P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
|
Original
|
CGH35030F
CGH35030F
CGH3503
|
PDF
|
ATC600S
Abstract: AVX0805 AVX1206 CRF35010
Text: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has
|
Original
|
CRF35010F
CRF35010
CRF350
CRF35010F
ATC600S
AVX0805
AVX1206
|
PDF
|
Cree Microwave
Abstract: No abstract text available
Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer
|
Original
|
CGH40010
CGH40010
CGH40010,
CGH40
40010P
Cree Microwave
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
|
Original
|
CGH35030F
CGH35030F
CGH3503
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,
|
Original
|
CGH35015
CGH35015
CGH3501
35015P
|
PDF
|
CGH27015
Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,
|
Original
|
CGH27015
CGH27015
CGH2701
27015P
CGH27015F
CGH27015-TB
CGH40010F
JESD22
cgh40010
18pF
|
PDF
|
STR F 6168
Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p
Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
|
Original
|
CGH40025
CGH40025
CGH40025,
CGH4002
40025F
STR F 6168
CGH40025-TB
j326
Cree Microwave
CGH40025F
JESD22
40025F
CGH40025P
hemt .s2p
|
PDF
|
CGH09120F
Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR
|
Original
|
CDPA21480,
CGH21240F
CDPA21480
CGH09120F
CGH25120F
CGH27060F
ofdm predistortion
CGH55030F
440117
CGH21120F
CGH21240F
CGH27015F
|
PDF
|
RO4350
Abstract: RO4350B transistor 0882 docsis V 8623 transistor 32QAM CGH55015F1 2J302 CGH5501 CGH55015
Text: CGH55015F1 / CGH55015P1 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015F1/CGH55015P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/
|
Original
|
CGH55015F1
CGH55015P1
CGH55015F1/CGH55015P1
CGH55015F1/
CGH55015P1
CGH5501
CGH55
015F1
RO4350
RO4350B
transistor 0882
docsis
V 8623 transistor
32QAM
2J302
CGH5501
CGH55015
|
PDF
|
PAR ofdm
Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
Text: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
|
Original
|
CGH27030F
CGH27030F
CGH2703
PAR ofdm
CGH27030
CGH27030-TB
RO4350B
10UF
470PF
str f 3626
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
|
Original
|
CGH40025
CGH40025
CGH40025,
CGH4002
40025F
|
PDF
|
CGH55030
Abstract: 256qam CGH55030F CGH5503 CGH55030F-TB ATC600L
Text: CGH55030F 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal
|
Original
|
CGH55030F
CGH55030F
CGH5503
CGH55030
256qam
CGH5503
CGH55030F-TB
ATC600L
|
PDF
|
10UF
Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,
|
Original
|
CGH35015
CGH35015
CGH3501
35015P
12product
10UF
CGH35015F
CGH35015-TB
molex 5238
|
PDF
|
str w 6554 a
Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025
Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain
|
Original
|
CGH40025
CGH40025
CGH40025,
CGH4002
40025F
str w 6554 a
str 6554
str w 6554
STR 6754
RO4350
RO4350B
0618
Cree Microwave
STR 6554 a
|
PDF
|
CGH27015-TB
Abstract: CGH27015 CGH27015F JESD22
Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,
|
Original
|
CGH27015
CGH27015
CGH2701
27015P
CGH27015-TB
CGH27015F
JESD22
|
PDF
|
CGH5503
Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1
|
Original
|
CGH55030F1
CGH55030P1
CGH55030F1/CGH55030P1
CGH55030F1/CGH55030P1
CGH5503
CGH55
030F1
CGH5503
CGH55030
CGH55030P1
CGH55030-TB
s 0934
RO4350B
ATC600L
128-QAM
|
PDF
|
CGH55015F2
Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/
|
Original
|
CGH55015F2
CGH55015P2
CGH55015F2/CGH55015P2
CGH55015F2/
CGH55015P2
CGH5501
CGH55
015F2
CGH5501
smd transistor s2p
CGH55015-TB
cgh55
hemt .s2p
RO4350B max torque
CGH55015
CGH55015F
|
PDF
|
STR W 5753 a
Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer
|
Original
|
CGH40010
CGH40010
CGH40010,
CGH40
40010P
STR W 5753 a
str 5753
str w 5753
8891
8952
Cree Microwave
10UF
470PF
CGH40010F
|
PDF
|
transistor 8772
Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
|
Original
|
CGH35030F
CGH35030F
CGH3503
transistor 8772
8772 transistor
470PF
CGH35030-TB
JESD22
|
PDF
|
Untitled
Abstract: No abstract text available
Text: - 39.00i0.15-33.32 ±0.1 524.8 + 0.15 -6.00 + 0 .2 5 $ 4 —40 UNC 2 PLC -AMP LOGO ^ 0 .2 5 + 0 .2 1 —3.80 + 0.41 2 PLC CROPHONE AUDIO OUT 3.1 8 + 0.38—1 3.1 8 + 0.38 ^ 20 PLC 15 PLC 1 .1 7 + 0.03 15 PLC 03.2O+OJO PCB TOLERANCE: 0 - 12: ± 0.10 12- : ±0.15
|
OCR Scan
|
|
PDF
|
