440UM Search Results

440UM Price and Stock

Filter by Manufacturer


Banner Engineering Corp PBF440UMNCMN Plastic Fiber, Diffuse Reflective; Core Dia.: 1 Mm; Fiber Length 12 M; Ferrule; Free Cut \|Banner Engineering PBF440UMNCMN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PBF440UMNCMN	Bulk			1	1 $244 10 $244 100 $244 1000 $244 10000 $244	Buy Now

440UM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BC817A Abstract: BC807A Text: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	PDF	BC817A BC817A BC807A 440um 440um 110um 110um BC807A
Untitled Abstract: No abstract text available Text: 9012A 9012A Silicon PNP Epitaxial Transistor Description: The 9012A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	PDF	440um 440um 110um 110um -50mA -500mA
BC807A Abstract: BC817A Text: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	PDF	BC807A BC807A BC817A 440um 440um 110um 110um BC817A
Untitled Abstract: No abstract text available Text: BC817 BC817 Silicon NPN Epitaxial Transistor Description: The BC817is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	PDF	BC817 BC817is BC807 440um 110um
Untitled Abstract: No abstract text available Text: BC807 BC807 Silicon PNP Epitaxial Transistor Description: The BC807is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC817 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	PDF	BC807 BC807is BC817 440um 110um
9013A Abstract: No abstract text available Text: 9013A 9013A Silicon NPN Epitaxial Transistor Description: The 9013A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um	Original	PDF	440um 440um 110um 110um 500mA 9013A
5401 transistor Abstract: 5401 5551 transistor transistor 5401 Text: 5401 5401 Silicon PNP Epitaxial Transistor Description: The 5401 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥150V@IC=1mA ●Complementary to 5551 Chip Appearance	Original	PDF	VCEO150V 440um 440um 110um 110um -120V, 5401 transistor 5401 5551 transistor transistor 5401
5551 Abstract: 5551 transistor 5551 datasheet 5401 555-1 Text: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance	Original	PDF	VCEO160V 440um 440um 110um 110um 5551 5551 transistor 5551 datasheet 5401 555-1
BR 1n70 Abstract: 0.8um 700V mos 1N70 Text: 3VD199700YL 3VD199700YL 高压MOSFET芯片描述 Ø 3VD199700YL为采用硅外延工艺制造的N沟道增强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD199700YL 3VD199700YL 3VD199700YLN 700VMOS O-251-3L 2070m 1900m 556um 440um BR 1n70 0.8um 700V mos 1N70
Untitled Abstract: No abstract text available Text: Attenuators Type N DC -1 8 GHz Precision Performance Frequency: D C -1 8 .0 GHz, D C -1 2.4 , and DC - 8.0 units available Attenuation Values: 1 - 60 dB as noted Attenuation Accuracy: i - 6 d B ± 0 .3 d B 7 - 20 dB 21 - 40 dB ± 0.5 dB + 0.7 dB 41 - 60 dB	OCR Scan	PDF
Gunn Diode Abstract: 10 GHz gunn diode MT030 MIL-E-15090 MTH80 Text: SERIES MT SERIES MTH GUNN DIODE « - 1 8 GHz OSCILLATORS " GENERAL SPECIFICATIONS: Temperature Range: Turn On Stability Time: Finish: Environmental: Harmonics: Spurious: Load VSWR: —20°C to +55°C 1 ms max. Paint per MIL-E-15090 Type II CL2 MIL-STD-202	OCR Scan	PDF	MIL-E-15090 MIL-STD-202 MT030 MT060 MT030-Transistor) MT060) MT060 MT104 MT145 Gunn Diode 10 GHz gunn diode MT030 MTH80