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    Untitled

    Abstract: No abstract text available
    Text: HI TA CHI/ O PTOE LECTRONI CS SHE D • 44ibaGS 001207^ bñT « H I T 4 H L 8 3 1 8 E /G GaAIAsLD (-os Description The HL8318E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are


    OCR Scan     		PDF 44ibaGS HL8318E/G ib205 HL8318E/G T-41-05

    T9040

    Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
    Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are


    OCR Scan     		PDF HL8318E/G 441bEG5 HL8318E/G HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8404SG, T9040 HE8807SG HE8813VG HL8312E HL8318E HL8318G Hitachi Scans-001