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    Radiall R414516161

    ATTENUATOR: TNC 16DB 18GHZ 2W 50
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    DigiKey R414516161 Bulk 5
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    Mouser Electronics R414516161
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    Richardson RFPD R414516161 1
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    Radiall R414.516.161

    Fixed Coaxial Attenuators 18GHz 16dB - Bulk (Alt: R414516161)
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    Avnet Americas R414.516.161 Bulk 14 Weeks, 2 Days 5
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    NEC Electronics Group UPD4516161AG5-A10-9NF-E2

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    Bristol Electronics UPD4516161AG5-A10-9NF-E2 12,569
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    NEC Electronics Group UPD4516161AG5

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    Bristol Electronics UPD4516161AG5 1,346
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    NEC Electronics Group UPD4516161AG5-A80

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    Bristol Electronics UPD4516161AG5-A80 1,002
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    4516161 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite Description The µPD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank ,


    Original
    PDF PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit 4516161-PC 216-bit 44-pin 50-pin

    M12939EJ3V0DS00

    Abstract: uPD4516421AG5-A10B-9NF uPD4516821AG5-A10-9NF uPD4516161AG5-A10B-9NF 4516161a PD4516821
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A for Rev.P 16M-bit Synchronous DRAM 2-banks, LVTTL 2 Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2, 524,288 × 16 × 2 (word × bit × bank , respectively.


    Original
    PDF PD4516421A, 516821A, 516161A 16M-bit 216-bit 44-pin 50-pin M12939EJ3V0DS00 uPD4516421AG5-A10B-9NF uPD4516821AG5-A10-9NF uPD4516161AG5-A10B-9NF 4516161a PD4516821

    wp1a

    Abstract: IC-3394 4516161 UPD4516421G5-A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.


    Original
    PDF PD4516421, 16M-bit 216-bit 44-pin 50-pin wp1a IC-3394 4516161 UPD4516421G5-A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF

    BA1T12

    Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.


    Original
    PDF PD4516421, 16M-bit 216-bit 44-pin 50-pin BA1T12 BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5

    M12939EJ3V0DS00

    Abstract: nec 44pin uPD4516421AG5-A10B-9NF uPD4516821AG5-A10B-9NF P-1222 TEST UPD4516161AG5
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.


    Original
    PDF PD4516421A, 516821A, 516161A 16M-bit 216-bit 44-pin 50-pin M12939EJ3V0DS00 nec 44pin uPD4516421AG5-A10B-9NF uPD4516821AG5-A10B-9NF P-1222 TEST UPD4516161AG5

    M10187EU1V0UM00

    Abstract: VR300 AP-49 intel 945 motherboard schematic diagram R300 R600 VR4400 intel 956 motherboard CIRCUIT diagram op amp 741 model hSpice NEC 4516821
    Text: User’s Manual 16M-Bit Synchronous DRAM µPD4516421, 4516821, 4516161 June 1995 Document No. M10187EU1V0UM00  Copyright 1995 NEC Electronics Inc. All Rights Reserved This document was created with FrameMaker 4.0.2 M1 01 87 EU 1V 0U M0 16M-Bit Synchronous DRAM User’s Manual


    Original
    PDF 16M-Bit PD4516421, M10187EU1V0UM00 M10187EU1V0UM00 VR300 AP-49 intel 945 motherboard schematic diagram R300 R600 VR4400 intel 956 motherboard CIRCUIT diagram op amp 741 model hSpice NEC 4516821

    uPD4516821AG5-A10BL-9NF

    Abstract: UPD4516161AG5-A
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A for Rev. B, P 16M-bit Synchronous DRAM Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.


    Original
    PDF PD4516421A, 516821A, 516161A 16M-bit 216-bit 44-pin 50-pin uPD4516821AG5-A10BL-9NF UPD4516161AG5-A

    UPD4516161AG5A80-9NF

    Abstract: 4516161a
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421A, 4516821A, 4516161A 16M-bit Synchronous DRAM Description The µPD4516421A, 4516821A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 × 2, 1,048,576 × 8 × 2 and 524,288 × 16 × 2 word × bit × bank , respectively.


    Original
    PDF PD4516421A, 516821A, 516161A 16M-bit 516161A 216-bit 44-pin 50-pin UPD4516161AG5A80-9NF 4516161a

    IC-3394

    Abstract: NEC 4516821 PD4516421 UPD4516161G5A10 tsop 66 2M42 4516421G5-A12 4516821G5
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µ PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.


    Original
    PDF PD4516421, 16M-bit 216-bit 44-pin 50-pin IC-3394U1 4516421G5-A12 IC-3394 NEC 4516821 PD4516421 UPD4516161G5A10 tsop 66 2M42 4516421G5-A12 4516821G5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


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    PDF PD4516421 UPD4516421, UPD4516821, 152-word 576-word 288-word x16-bit 400-mil 44-pin 400-mil,

    d4516161

    Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


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    PDF uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin d4516161 NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516

    NEC uPD 688

    Abstract: CQ-111
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


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    PDF uPD4516421 uPD4516821 uPD4516161 UPD4516421, UPD4516821, 216-bit 152-word 576-word 288-word x16-bit NEC uPD 688 CQ-111

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.


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    PDF PD4516421, 16M-bit /iPD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin b42755S

    a2-xqa

    Abstract: IC-3394
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM Description The ¿iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


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    PDF 16M-bit uPD4516421 uPD4516821 uPD4516161 216-bit 44-pin 50-pin IR35-107-2 VP15-107-2 a2-xqa IC-3394

    i8085

    Abstract: Nec AC 160
    Text: D A TA S H E E T NEC MOS INTEGRATED CIRCUIT jiPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T h e //PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit sy n c h ro n o u s d y n a m ic ra n d o m -a cce ss m e m o rie s, o rg an ized as 2 ,0 9 7 ,1 5 2 x4 x2 , 1,048,576x8x2 and 5 2 4,28 8x1 6x2 w o rd xb itx b a n k , re sp e ctiv e ly .


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    PDF uPD4516421 uPD4516821 uPD4516161 16M-bit //PD4516421, 216-bit 576x8x2 44-pin i8085 Nec AC 160

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ //¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The //PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524,288 x 16 x 2 word x bit x bank ,


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    PDF uPD4516421-PC uPD4516821-PC uPD4516161-PC 16M-bit //PD4516421-PC, 4516821-PC, 4516161-PC 216-bit 44-pin 50-pin

    NEC uPD

    Abstract: NEC AND 1994 AND sdram
    Text: • b4B ?S 5S 0041123 S 34 ■ PRELIMINARY DATA SHEET_ M O S IN T E G R A T E D C IR C U IT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The uPD4516421, uPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x


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    PDF uPD4516421 uPD4516821 uPD4516161 216-bit 152-word 576-word 288-word x16-bit NEC uPD NEC AND 1994 AND sdram

    A91A

    Abstract: uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421A, 4516821 A, 4516161A 16M-bit Synchronous DRAM Description The ¿¡PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynam ic random -access mem ories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


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    PDF uPD4516421A uPD4516821A uPD4516161A 16M-bit PD4516421 516161A 216-bit 44-pin 50-pin 5-80-9N A91A uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY

    uPD4516161AG5-A80-9NF

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD4516421 A, 4516821 A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The /¿PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


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    PDF uPD4516421A uPD4516821A uPD4516161A 16M-bit PD4516421 516161A 216-bit 44-pin 50-pin uPD4516161AG5-A80-9NF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ' /¿PD4516421A, 4516821 A, 4516161A ; 16M-bit Synchronous DRAM i i j D escrip tio n The//PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access ’ memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


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    PDF uPD4516421A 516161A 16M-bit The//PD4516421 516161A 216-bit 44-pin 50-pin

    nec d4516

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The ¿tPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.


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    PDF uPD4516421 uPD4516821 uPD4516161 16M-bit tPD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin nec d4516

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


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    PDF PD4516421, 16M-bit 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin S50G5-80-7JF3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2 , 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.


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    PDF uPD4516421 uPD4516821 uPD4516161 16M-bit 216-bit 44-pin 50-pin

    D4516821G5-A12

    Abstract: nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fd>D4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The jiPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


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    PDF D4516421, 16M-bit uPD4516421 uPD4516821 uPD4516161 216-bit 152x4x2, 288x16x2 44-pin 50-pin D4516821G5-A12 nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049