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    475102N2 Price and Stock

    IXYS Corporation DE475-102N21A

    Rf Mosfet, N Channel, 1Kv, De-475; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:24A; Power Dissipation:1.8Kw; Operating Frequency Min:-; Operating Frequency Max:30Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Ixys Rf DE475-102N21A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DE475-102N21A Bulk 1
    • 1 -
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    IXYS Integrated Circuits Division DE475-102N21A

    RF MOSFET N-CHANNEL DE475 / RF Mosfet N-Channel 1800W DE475
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics DE475-102N21A 200
    • 1 $106.9718
    • 10 $89.7183
    • 100 $89.7183
    • 1000 $89.7183
    • 10000 $89.7183
    		Buy Now

    475102N2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    475-102N20A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET N-CHANNEL DE475 Original PDF
    475-102N21A-00 IXYS-RF Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET N-CHANNEL DE475 Original PDF

    475102N2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    475102N2

    Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-102N21A 30MHz 475102N2 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21

    Untitled

    Abstract: No abstract text available
    Text: RF POWER MOSFET Products Product Line of mom D ire cte d Etiergy, inc. An QIXYS Company DE Series The patented DE-SERIES Fast Power MOSFETs are a new class of unique high power transistors designed as a circuit element from the ground up for high speed, high frequency, high power applications at frequencies up to 100 MHz. DEI's Fast Power™ technology


    OCR Scan     		PDF de102N02A 275-102N06A 275X2-102N06A 375-102N12A 475-102N21A 275x2