SFH495P
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen
|
Original
|
PDF
|
Q62703-Q2891
GEXY6971
GEXY6630
SFH495P
|
Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen
|
Original
|
PDF
|
GEX06971
GEX06630
|
transistor 495
Abstract: GEX06630 GEX06971 Q62702-P5054 OHF00328 SFH495P
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen
|
Original
|
PDF
|
GEX06971
GEX06630
transistor 495
GEX06630
GEX06971
Q62702-P5054
OHF00328
SFH495P
|
SFH 4552
Abstract: GEXY6632 GEXY6971 Q62702-P5054
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen
|
Original
|
PDF
|
|
NTC R29
Abstract: AMP-787441-1 AMP-74 NCP21XV103J03RA 35CV10AX 2N7002-SOT23 8.4v battery charger taiyo yuden date code 919AS-220M ntc 10k 10% D5
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 495 2 CELL LI-ION BATTERY CHARGER WITH CHARGE TERMINATION LTC4006 DESCRIPTION Demonstration circuit 495 is a single battery stand-alone battery charge controller with built in charge termination featuring the LTC 4006. The input voltage is 9 to 20V. The
|
Original
|
PDF
|
LTC4006
b3C105KAT
EMK107BJ104MA
TAJB106M016
0603ZC472MAT
MBRM140T3
MMSZ5248BS-7
LN1451C-
LN1351C-
2802S-03-G1
NTC R29
AMP-787441-1
AMP-74
NCP21XV103J03RA
35CV10AX
2N7002-SOT23
8.4v battery charger
taiyo yuden date code
919AS-220M
ntc 10k 10% D5
|
AN489 Analysis and Basic Operation of the MC1595
Abstract: AN489 motorola AN489 AN489 Analysis and Basic Operation of the MC1495 application note AN489 mc14951 MC1495P MC1595 MC1495 MC1495BP
Text: Order this document by MC1495/D I MOTOROLA MCI 495 I I Wideband Linear Four=Quadrant Multiplier The MC1 495 is designed for use where the output is a linear product of two input voltages. Maximum versatility is assured by allowing the user to select the level shift method. Typical applications include: multiply, divide*,
|
Original
|
PDF
|
MC1495/D
1PHX3602H
142Tabumi
OW21W15
MC14951D
AN489 Analysis and Basic Operation of the MC1595
AN489
motorola AN489
AN489 Analysis and Basic Operation of the MC1495
application note AN489
mc14951
MC1495P
MC1595
MC1495
MC1495BP
|
001H
Abstract: EM65XX ix 2933 29123microcontroller p6520 EMPB65XX HEF4010 HEF40106B
Text: EM MICROELECTRONIC - MARIN SA EM66xx 4-bit Micro controller family Contents of this binder : Development System Manual Peripheral Interface Modules Manual LCD Editor Module Manual MFP Programming Interface Manual Version 4.2, July 2002 Binder 4.2-07/02 Rev . A/495
|
Original
|
PDF
|
EM66xx
EME6600
EM6680
EMDK6680A
EM6520
EMDB6520
EM6521
001H
EM65XX
ix 2933
29123microcontroller
p6520
EMPB65XX
HEF4010
HEF40106B
|
400 AMP CIRCUIT BREAKER
Abstract: LTC6994-2 DC circuit breaker 5A Linear Technology Timerblox DN495 LTC6994
Text: Simple Energy-Tripped Circuit Breaker with Automatic Delayed Retry Design Note 495 Tim Regan Introduction A circuit breaker protects sensitive load circuits from excessive current flow by opening the power supply when the current reaches a predetermined level. The simplest
|
Original
|
PDF
|
350ms
LT1783
400mV
LT6108-2
convertsF02
LT1999
dn495f
400 AMP CIRCUIT BREAKER
LTC6994-2
DC circuit breaker 5A
Linear Technology Timerblox
DN495
LTC6994
|
32k x 8 28 dip mram
Abstract: No abstract text available
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% Form, Fit, Function-compatible with 32K x 8, micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW (max.)
|
Original
|
PDF
|
CY9C62256
CY62256)
CY9C62256
32k x 8 28 dip mram
|
GEX06971
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P Vorläufige Daten / Preliminary Data 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 1.8 1.2 3.85 3.35 Area not flat 0.6 0.4 Chip position Approx. weight 0.5 g fex06306 GEX06971
|
Original
|
PDF
|
fex06306
GEX06971
OHF00330
GEX06971
|
70ZI
Abstract: CY9C6264 CY9C6264-70PI CY9C6264-70SI FeRAM
Text: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW max.
|
Original
|
PDF
|
CY9C6264
CY9C6264
70ZI
CY9C6264-70PI
CY9C6264-70SI
FeRAM
|
Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE IC Micronas Edition March 15, 2000 6251-495-2AN MSP 34xx Family Recommendations for Applications with Intercarrier IF-Signals MICRONAS APPLICATION NOTE IC MSP 34xx Family Recommendations for Applications with Intercarrier IF-Signals In order to avoid clipping effects at the IF-A/D converter of the MSP, the video, chroma, and sync signal
|
Original
|
PDF
|
6251-495-2AN
|
CY62256
Abstract: CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby
|
Original
|
PDF
|
CY9C62256
CY62256)
28-pin
CY62256
CY9C62256
CY9C62256-70SI
CY9C62256-70SNC
CY9C62256-70SNI
|
32k x 8 28 dip mram
Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby
|
Original
|
PDF
|
CY9C62256
CY62256)
28-pin
32k x 8 28 dip mram
CY62256
CY9C62256
CY9C62256-70SI
CY9C62256-70SNC
CY9C62256-70SNI
22758
|
|
|
FeRAM
Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Text: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby
|
Original
|
PDF
|
CY9C62256
CY62256)
28-pin
FeRAM
CY62256
CY9C62256
CY9C62256-70SI
CY9C62256-70SNC
CY9C62256-70SNI
22758
|
"three phase" scr heater controller
Abstract: scr power electronic element Mercury Electric Oil heater SCR SN 104 047 star delta wiring diagram SCR POWER CONTROL RTV 17-33
Text: Issued March 1996 021-495 Data Pack E Cartridge Heaters Data Sheet Cartridge heaters This range of 79 cartridge heaters has been designed to provide localised heat to a restricted work area requiring close thermal control. They are intended for installation within a heater block, thus enabling the
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)
|
Original
|
PDF
|
GEX06971
GEX06630
OHF00328
OHF00329
OHF00330
OHF00441
|
Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen • Hohe Zuverlässigkeit
|
OCR Scan
|
PDF
|
1999-03tion,
|
transistor 495
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 5.9 5.5 0.6 0.4 GEX06971 Area not flat 5-9. 5.5 'M p ' 0.6 0.4 Cathode Diode GEX06630 Collector (Transistor) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
|
OCR Scan
|
PDF
|
GEX06971
GEX06630
transistor 495
|
TMP96141AF
Abstract: DALLAS DS80C320 stove 8051
Text: Page 1 o f 5 Bom to Fail Cut the Cord the Easy Way. W in a FREE Dev Kit $495 value . Embedded.com - o Born to Fail By Jack Ganssle, Embedded Systems Programming Dec 12 2002 (10:11 AM) URL: http ://www. embedded •com/showArticle.ihtml?articleID=9900877
|
OCR Scan
|
PDF
|
|
TRANSFORMER bck 03
Abstract: transistor JSW 07 OP295
Text: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable
|
OCR Scan
|
PDF
|
0P-295/0P-495
OP-295
14-Lead
TRANSFORMER bck 03
transistor JSW 07
OP295
|
OP295
Abstract: No abstract text available
Text: Rail-to-Rail Operational Amplifier 0P-295/0P-495 ANALOG DEVICES □ FEATURES Rail-to-Rail Output Swing Single Supply Operation, +3 V to 36 V Low Offset Voltage: 200 |xV Gain Bandwidth Product: 80 kHz High Open-Loop Gain: 1000 V/m V Unity Gain Stable Low Power
|
OCR Scan
|
PDF
|
0P-295/0P-495
OP-295
OP-495,
270ft
OP295
|
2SB1495
Abstract: 2SD2257
Text: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -2 A ) Low Saturation Voltage : VCE(sat)=—1-5V (MAX.) (IC= -1.5A ) Complementary to 2SD2257
|
OCR Scan
|
PDF
|
2SB1495
2SD2257
2SB1495
|
2SB1495
Abstract: 2SD2257
Text: TO SH IBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , Ic = -2A ) Low Saturation Voltage : VCE (sa t)= -l-5 V (MAX.) (IC= -1 .5 A )
|
OCR Scan
|
PDF
|
2SB1495
2SD2257
2SB1495
|