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    Mercury Systems Inc WEDPN16M72VR-100B2I

    DRAM Module SDRAM 128Mbyte
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics WEDPN16M72VR-100B2I 982 110 Weeks 1
    • 1 $539.71
    • 10 $419.78
    • 100 $251.86
    • 1000 $193.75
    • 10000 $193.75
    		Buy Now

    Mercury Systems Inc WEDPN16M72V100B2M

    DRAM Module SDRAM 1Gbit
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics WEDPN16M72V100B2M 402 110 Weeks 1
    • 1 $469.01
    • 10 $337.69
    • 100 $234.5
    • 1000 $205.91
    • 10000 $205.91
    		Buy Now

    Mercury Systems Inc WEDPN8M64V-125B2M

    DRAM Module SDRAM 512Mbit
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics WEDPN8M64V-125B2M 191 110 Weeks 1
    • 1 $778.7
    • 10 $605.66
    • 100 $363.4
    • 1000 $363.4
    • 10000 $363.4
    		Buy Now

    White Electronic Designs Corp WEDPN4M72V-125BI

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components WEDPN4M72V-125BI 14
    • 1 $1566.25
    • 10 $1342.5
    • 100 $1342.5
    • 1000 $1342.5
    • 10000 $1342.5
    		Buy Now

    White Electronic Designs Corp WEDPN8M72V-100BI

    MEMORY MODULE,SDRAM,8MX72,CMOS,BGA,219PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components WEDPN8M72V-100BI 10
    • 1 $300
    • 10 $260
    • 100 $260
    • 1000 $260
    • 10000 $260
    		Buy Now
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    WEDPN Datasheets (239)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    WEDPN16M64V-100B2M White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V100BC White Electronic Designs 16M x 64 Synchronous DRAM Original PDF
    WEDPN16M64V-100BC White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V100BI White Electronic Designs 16M x 64 Synchronous DRAM Original PDF
    WEDPN16M64V-100BI White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V100BM White Electronic Designs 16M x 64 Synchronous DRAM Original PDF
    WEDPN16M64V-100BM White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V-125B2M White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V125BC White Electronic Designs 16M x 64 Synchronous DRAM Original PDF
    WEDPN16M64V-125BC White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V125BI White Electronic Designs 16M x 64 Synchronous DRAM Original PDF
    WEDPN16M64V-125BI White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V125BM White Electronic Designs 16M x 64 Synchronous DRAM Original PDF
    WEDPN16M64V-125BM White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64V-133B2M White Electronic Designs 16Mx64 Synchronous DRAM Original PDF
    WEDPN16M64VR-100B2M White Electronic Designs 16Mx64 REGISTERED SYNCHRONOUS DRAM Original PDF
    WEDPN16M64VR-100BC White Microelectronics 100MHz 3.3V power supply 16M x 64 registered synchronous DRAM Original PDF
    WEDPN16M64VR-100BI White Microelectronics 100MHz 3.3V power supply 16M x 64 registered synchronous DRAM Original PDF
    WEDPN16M64VR-100BM White Microelectronics 100MHz 3.3V power supply 16M x 64 registered synchronous DRAM Original PDF
    WEDPN16M64VR-125B2M White Electronic Designs 16Mx64 REGISTERED SYNCHRONOUS DRAM Original PDF
    ...

    WEDPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WEDPNF8M722V-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm


    Original     		PDF WEDPNF8M722V-XBX 8Mx72 16KByte, 32KByte, 64KBytes WEDPNF8M722V-XBX 100MHz 100ns

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY* 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES n n n n n n n n n n n High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 21mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 125MHz WEDPN4M72V-XB2X 32MByte 256Mb) WEDPN4M72V

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


    Original     		PDF WEDPN16M72V-XBX 16Mx72 128MByte 864-bit 100MHz, 125MHz 100MHz

    16MX64

    Abstract: WEDPN16M64VR-XBX
    Text: WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM


    Original     		PDF WEDPN16M64VR-XBX 16MX64 128MByte 864bit 16-bit 750mA 66MHz-133MHz WEDPN16M64VR-XBX

    WEDPN8M64VR-XBX

    Abstract: No abstract text available
    Text: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a


    Original     		PDF WEDPN8M64VR-XBX 8Mx64 64MByte 512Mb) 432-bit 16-bit WEDPN8M64VR-XBX

    WEDPN4M64V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M64V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M64V-XBX HI-RELIABILITY PRODUCT 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M64V-XBX 8Mx64 125MHz WEDPN8M64V-XBX 64MByte 512Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz WEDPN8M72V-XBX 64MByte 512Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz WEDPN4M64V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728


    Original     		PDF WEDPN8M72VR-XBX 8Mx72 WEDPN8M72VR-XBX 64MByte 512Mb) 100MHz 66MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728


    Original     		PDF WEDPN8M72VR-XBX 8Mx72 WEDPN8M72VR-XBX 64MByte 512Mb) 100MHz 66MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive edge of system clock cycle


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz WEDPN8M72V-XBX 64MByte 512Mb) 100MHz 125MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN16M72V-XBX HI-RELIABILITY PRODUCT 16Mx72 Synchronous DRAM *ADVANCED FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN16M72V-XBX 16Mx72 125MHz 128MByte 864-bit 100MHz

    WEDPN4M72V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz, WEDPN4M72V-XBX

    WEDPN16M64V-XBX

    Abstract: WEDPN8M64V-XBX
    Text: WEDPN8M64V-XBX 8Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125, 133*MHz ■ Package: • 219 Plastic Ball Grid Array PBGA , 25 x 25mm The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing


    Original     		PDF WEDPN8M64V-XBX 8Mx64 64MByte 512Mb) 432-bit 100MHz 125MHz 133MHz* 133MHz WEDPN16M64V-XBX WEDPN8M64V-XBX

    WEDPN8M72VR-XBX

    Abstract: No abstract text available
    Text: WEDPN8M72VR-XBX 8Mx72 Registered Synchronous DRAM *Preliminary FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds of The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a


    Original     		PDF WEDPN8M72VR-XBX 8Mx72 64MByte 512Mb) 432-bit 16-bit 100MHz 66MHz WEDPN8M72VR-XBX

    WEDPN16M72V-XBX

    Abstract: WEDPN8M72V-XBX 54TSOP WEDPN16M72-XBX
    Text: 16M x 72 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN16M72V-XBX* Designed to complement PowerPCTM 750/755 and high performance memory controllers see other side for typical application block diagram Performance Features • SDRAM CAS Latency = 3 (125MHz), 2 (100MHz) or 3 (100MHz), 2 (75MHz)


    Original     		PDF WEDPN16M72V-XBX* 125MHz) 100MHz) 75MHz) WEDPN8M72V-XBX* 755sbd WEDPN16M72-XBX MIF2004 WEDPN16M72V-XBX WEDPN8M72V-XBX 54TSOP

    WEDPN

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz* 32MByte 256Mb) 216-bit 100MHz 125MHz WEDPN

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz 64MByte 512Mb) 432-bit 100MHz

    DQ75

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz DQ75

    FD19

    Abstract: BY12 FA147
    Text: WEDPNF8M722V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* • 3.3 Volt for Read and Write Operations FEATURES ■ 1,000,000 Erase/Program Cycles ■ Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm


    Original     		PDF WEDPNF8M722V-XBX 8Mx72 WEDPNF8M722V-XBX 16KByte, 32KByte, 64KBytes 100MHz 100ns FD19 BY12 FA147

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 133MHz 32MByte 256Mb) 216-bit

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive


    Original     		PDF 8Mx72 125MHz WEDPN8M72V-XBX WEDPN8M72V-XBX 64MByte 512Mb) 100MHz 100MHz,