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Catalog Datasheet	MFG & Type	Document Tags	PDF
bPA20 Abstract: No abstract text available Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20	PDF
Untitled Abstract: No abstract text available Text: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01	OCR Scan	HYM564404A 64-bit HY5116404A HYM564404AKG/ATKG/ASLKG/ASLTKG DQ0-DQ63) 4b75oaa 1CE16-10-APR95	PDF
Untitled Abstract: No abstract text available Text: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and	OCR Scan	HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG/ASLTRG 22SI5 Mb750flfl 1CE16-10-APR96	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for	OCR Scan	HYM53221OA 32-bit HYM53221 HY5117800B HYM53221OAE/ASLE/ATE/ASLTE 4b750Afl 1CE13-10-DEC94 HYM532210A	PDF
Untitled Abstract: No abstract text available Text: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for	OCR Scan	HYM540A400 40-blt HY5116400 HYM540A400M/LM/TM/LTM HYM540A400MG/LMG/TMG/LTMG HYM540400M/MG HYM540400TM/TMG 1CE08-01-FEB94	PDF
Untitled Abstract: No abstract text available Text: -HYUNDAI HYM536A814B M-Series 8M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814B is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 iiF and 0.01 nFdecoupling capacitors are mounted	OCR Scan	HYM536A814B 36-bit HY5117404B HYM536A814BM/BSLM HYM536A814BMG/BSLMG 012SQ171MN 1CF15-10-FEBM	PDF
HY5117804 Abstract: No abstract text available Text: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HVM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51V17804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .luF and 0.01 mF	OCR Scan	HYM5V64414A 64-bit HVM5V64414A HY51V17804B HYM5V64414AFG/ATFG/ASLFGASLTFG CA50-CAS7) DQ0-DQ63) 4b750flfl 1EC07-10-JAN96 HY5117804	PDF
Untitled Abstract: No abstract text available Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	16-bit HY5116164B 16-bit. HY5116164B 1ADS7-10-MAY95 HY5116164BJC HY5116164BSLJC HY5116164BTC	PDF
HY5117400A Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371 Text: HY5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The HY5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371	PDF
Untitled Abstract: No abstract text available Text: HY51V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve	OCR Scan	HY51V4260B 256Kx 16-bit 400mil 40pin 40/44pin 0D04273	PDF
Datasheet-03/HY51174048 Abstract: No abstract text available Text: •HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 decoupling capacitors are mounted	OCR Scan	HYM532414B 32-bit HY5117404B HYM532414BM/BSLM/BTM/BSLTM HYM532414BMG/BSLMG/BTMG/BSLTMG HYM532414B 4b75066 Datasheet-03/HY51174048	PDF
Untitled Abstract: No abstract text available Text: HY6718110/111 HYUNDAI 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a	OCR Scan	HY6718110/111 486/Pentium 15ns/20ns/25ns 50MHz 486/Pentium 4b75066 1DH03-11-MAY95 HY6718110/111 4b75DÃ	PDF
phct Abstract: baw16 OCB-15 wpp3 gc137 mcag1 d0ji Text: H Y 5 1 V 4 2 6 0 B S e r ie s 256K X 16-bit CMOS DRAM with 2CAS " H Y U N D A I DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve	OCR Scan	HY51V4260B 16-bit 400mil 40pin 40/44pin 4fci750Ã 1AC26-10-MAY95 phct baw16 OCB-15 wpp3 gc137 mcag1 d0ji	PDF
Untitled Abstract: No abstract text available Text: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY5116400 1AD02-10-MAV94 4b750fifi HY5116400JC HY5116400UC	PDF

HY514100-80 Abstract: ascl2 Text: HYUNDAI ELECTRONICS BTE D • 4b75DÖÖ DDDG311 S BIHYNK PRELIMINARY ^ 4M X 1-Bit CMOS DRAM? M191200A-MAY91 -r -H ê -1 2 -ïS DESCRIPTION FEATURES • Low power dissipation - Operating Current, 100ns : 80mA max. - TTL Standby Current : 2mA(max.) - CMOS Standby Current : lmA(max.)	OCR Scan	QDDG311 HY514100 M191200A-M T-H6-23-Ã 100ns HY514100. 512KX8 HY514100-80 ascl2	PDF
Untitled Abstract: No abstract text available Text: ‘ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.	OCR Scan	HYM536410A 36-bit HYM53641OA HY5117400A HY514100A HYM53641OAM/ALM/ATM/ALTM HYM53641OAMG/ALMG/ATMG/ALTMG 13W72 HYM536410A/AL	PDF
Untitled Abstract: No abstract text available Text: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22\|iF decoupling	OCR Scan	HYM594000B HY5117400 HY514100A HYM594000BM/BLM compa-MAY93 DD16B2 4k750flA 0Q01flfl3	PDF