HYM532414BM
Abstract: HY5117404B
Text: HYM532414B M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
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Original
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HYM532414B
4Mx32
4Mx32-bit
HY5117404B
HYM532414BM
HYM532414BMG
72-Pin
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PDF
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HYM53241
Abstract: No abstract text available
Text: •H Y U N D A I HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72pin glass-epoxy printed circuit board. 0 1nF and 0 01 nFdecoupling capacitors are mounted
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OCR Scan
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HYM532414B
32-bit
HY5117404B
72pin
HYM532414BM/BSLM/BTM/BSLTM
HYM532414BMQBSLMG/BTMG/BSLTMG
HYM532414B
HYM53241
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PDF
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Datasheet-03/HY51174048
Abstract: No abstract text available
Text: •HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 decoupling capacitors are mounted
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OCR Scan
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HYM532414B
32-bit
HY5117404B
HYM532414BM/BSLM/BTM/BSLTM
HYM532414BMG/BSLMG/BTMG/BSLTMG
HYM532414B
4b75066
Datasheet-03/HY51174048
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PDF
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Untitled
Abstract: No abstract text available
Text: -H YU N D AI > • H Y M 5 3 2 4 1 4 B M - S e r ie s 4MX32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 h F and 0.01 nF
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OCR Scan
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4MX32
HYM532414B
4Mx32-bit
HY5117404B
HYM532414BM
HYM532414BMG
72-Pin
256ms
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PDF
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HY51174048
Abstract: No abstract text available
Text: HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72pin glass-epoxy printed circuit board. 0.1 jiFand 0.01 ^ d e c o u p lin g capacitors aremounted
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OCR Scan
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HYM532414B
32-bit
HY5117404B
a72pin
HYM532414BM/BSLM/BTM/BSLTM
HYM532414BMG/BSLMG/BTMG/BSLTMG
HYM532414B
00SCQ.
HY51174048
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PDF
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HYM532814
Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2
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OCR Scan
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HYM532124AW/ATW
532100AM
HYM532120W/TW
HYMS32120AW/ATW
HY5118164BUC/BTC
HY514400AJ
HY5118160JC/TC
HY5118160BJC/BTC
HY531000AJ
HYM532814
HYM532224
hy5118160bjc
HYM532214AE60
HY5118160
HYM536A814BM
HYM536100AM
HY51178048J
HY5118160JC
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PDF
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HYM532814
Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Text: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .
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OCR Scan
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
1Mx32
2Mx32
HYM532814
TRA8 L
HYM536410
HYM532100AM
HYM532100
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PDF
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HYM536100AM
Abstract: HYM532814 4Mx4 dram simm HYM532100AM 1MX32 HYM532120W HYM532224 HYM536410 HYM536410AM HYM532200AM
Text: TABLE OF CONTENTS 1. INDEX 1 Table of C ontents. 2. PRODUCT QUICK GUIDE Ordering In fo rm atio n . Quick Reference . How and What to know as reading Part No.
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OCR Scan
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HYM532124AW
HYM532224AW
HYM532224AE
HYM532214AE
HYM532414AM
HYM532414BM
HYM536A414AM
HYM536A414BM
HYM532814AM
HYM532814BM
HYM536100AM
HYM532814
4Mx4 dram simm
HYM532100AM
1MX32
HYM532120W
HYM532224
HYM536410
HYM536410AM
HYM532200AM
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PDF
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HYM532814B
Abstract: No abstract text available
Text: “H Y U N D A I HYM532814B M-Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 j F and 0.01 (iF decoupling capacitors are
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OCR Scan
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
HYM532814B
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PDF
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HYM5328104B
Abstract: HYM532814B HYM532810 HYM532814
Text: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are
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OCR Scan
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM5328148M/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/B7MG/BSLTMG
100B6
002f3
G0GS47S
HYM532810
HYM532814
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PDF
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Hyundai 2MX32 EDO simm module
Abstract: HYM532814 HYM53681 HYM5V72A3204
Text: «HYUNDAI QUICK REFERENCE MODE ORGANIZATION 8M Bytes 2Mx32 BASE PART NO. SPEED R£F. 1Mx16 HYM532224AW/AWG 60/70/80 1K 5V HYM532224CW/CWG 6G/7Q/80 1K 5V HYM532214AE/AEG 60/70/80 2K 5V EDO 2Mx8 FP 4Mx32 EDO VOLT. AVAIL. HYM532214CE/CEG 60/70/80 2K 5V HYM53241OAM/AMG
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OCR Scan
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1Mx16
2Mx32
HYM532224AW/AWG
HYM532224CW/CWG
HYM532214AE/AEG
HYM532214CE/CEG
6G/7Q/80
HYM53241OAM/AMG
HYM53241OCM/CMG
4Mx32
Hyundai 2MX32 EDO simm module
HYM532814
HYM53681
HYM5V72A3204
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PDF
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.lyF and 0.01 nF decoupling capacitors are
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OCR Scan
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HYM532814B
32-bit
HYM5328104B
HY5117404B
HYM532814BM/BSLM/BTM/BSLTM
HYM532814BMG/BSLMG/BTMG/BSLTMG
100ffi
004i10*
HYM532814B
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PDF
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