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    4C1M1 Search Results

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    4C1M1 Price and Stock

    Alliance Memory Inc AS4C1M16S-7TCN

    IC DRAM 16MBIT PAR 50TSOP II
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    DigiKey AS4C1M16S-7TCN Tray 176 1
    • 1 $2.47
    • 10 $2.19
    • 100 $2.03825
    • 1000 $1.77333
    • 10000 $1.58532
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    Avnet Americas AS4C1M16S-7TCN Tray 12 Weeks 117
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    Mouser Electronics AS4C1M16S-7TCN 194
    • 1 $2.37
    • 10 $1.98
    • 100 $1.98
    • 1000 $1.59
    • 10000 $1.43
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    Newark AS4C1M16S-7TCN Bulk 105 1
    • 1 $1.3
    • 10 $1.3
    • 100 $1.3
    • 1000 $1.3
    • 10000 $1.3
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    TME AS4C1M16S-7TCN 1
    • 1 $2.15
    • 10 $2.15
    • 100 $2.15
    • 1000 $1.61
    • 10000 $1.52
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    Karl Kruse GmbH & Co KG AS4C1M16S-7TCN 83,518
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    Avnet Silica AS4C1M16S-7TCN 13 Weeks 117
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    Alliance Memory Inc AS4C1M16S-6TCN

    IC DRAM 16MBIT PAR 50TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AS4C1M16S-6TCN Tray 117 1
    • 1 $1.92
    • 10 $1.704
    • 100 $1.58625
    • 1000 $1.37993
    • 10000 $1.375
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    Avnet Americas AS4C1M16S-6TCN Tray 12 Weeks 117
    • 1 -
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    • 1000 $1.386
    • 10000 $1.386
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    Mouser Electronics AS4C1M16S-6TCN 370
    • 1 $1.92
    • 10 $1.59
    • 100 $1.59
    • 1000 $1.39
    • 10000 $1.37
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    Newark AS4C1M16S-6TCN Bulk 117
    • 1 $2.2
    • 10 $2.2
    • 100 $2.2
    • 1000 $2.2
    • 10000 $2.1
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    TME AS4C1M16S-6TCN 91 1
    • 1 $2.4
    • 10 $2.27
    • 100 $2.15
    • 1000 $1.83
    • 10000 $1.83
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    Karl Kruse GmbH & Co KG AS4C1M16S-6TCN 1,318
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    Avnet Silica AS4C1M16S-6TCN 13 Weeks 117
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    Alliance Memory Inc AS4C1M16S-6TIN

    IC DRAM 16MBIT PAR 50TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AS4C1M16S-6TIN Tray 61 1
    • 1 $2.78
    • 10 $2.469
    • 100 $2.29775
    • 1000 $1.99891
    • 10000 $1.78691
    		Buy Now
    Avnet Americas AS4C1M16S-6TIN Tray 12 Weeks 117
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.575
    • 10000 $1.575
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    Mouser Electronics AS4C1M16S-6TIN 58
    • 1 $2.33
    • 10 $1.86
    • 100 $1.86
    • 1000 $1.63
    • 10000 $1.56
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    Newark AS4C1M16S-6TIN Bulk 117
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $2.5
    • 10000 $2.4
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    Bristol Electronics AS4C1M16S-6TIN 7
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    TME AS4C1M16S-6TIN 1
    • 1 $2.51
    • 10 $2.35
    • 100 $2.1
    • 1000 $1.61
    • 10000 $1.61
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    Karl Kruse GmbH & Co KG AS4C1M16S-6TIN 103,638
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    Avnet Silica AS4C1M16S-6TIN 13 Weeks 117
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    OMRON Industrial Automation E2V-X4C1-M1

    SENSOR PROX INDUCTIVE 4MM CYLIND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey E2V-X4C1-M1 Box 1
    • 1 $369.45
    • 10 $369.45
    • 100 $369.45
    • 1000 $369.45
    • 10000 $369.45
    		Buy Now

    OMRON Industrial Automation E2EM-X4C1-M1

    SENSOR PROX INDUCTIVE 4MM CYLIND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey E2EM-X4C1-M1 Bulk
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    Find more 4C1M1 price and stock on Findchips.com

    4C1M1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4C1M16E5

    Abstract: AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1
    Text: AS4LC1M16E5 3V 1Mx16 CMOS DRAM EDO Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time


    Original     		PDF AS4LC1M16E5 42-pin 44/50-pin AS4LC1M16E5) 4C1M16E5 AS4LC1M16E5-60TC AS4LC1M16E5 4C1M1

    Untitled

    Abstract: No abstract text available
    Text: H igh Performance 1MX16 CMOS DRAM •■ II 4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0


    OCR Scan     		PDF 1MX16 AS4C1M16E0 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) AS4LC1M16E0 AS4LC1M16EO-70JC 42-pm 1M16E0

    16F5

    Abstract: 4c1m16
    Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh


    OCR Scan     		PDF 16E0-60) ZDDQ15 ZDDQ11 ZDDQ10 A54C1M16FS 42-pin -60JC AS4C1M16F5-50JC AS4C1M16F5 16F5 4c1m16

    4lc1m16e5-6

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n t e lM x 16 CM OS DRAM » H A S4C 1M 16E 5 A S4L C 1M 16E 5 A 1 M X 16 CMOS EDO DRAM Preliminary information Features • O rg a n iz a tio n : 1,048,576 w o r d s x 16 b its • 1 0 2 4 re fre s h cycles, 16 m s re fre s h in terv al


    OCR Scan     		PDF 16E5-60) 4LC1M16E5-60) 42-pin AS4C1M16ES-50JC AS4C1M16E5-60JC AS4LC1M16E5-50TC -60TC 42-pin 1M16E0 4lc1m16e5-6

    4LC1M16E5

    Abstract: 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A as4c1m16e5 4lc1m16e5-60 AS4LC1M16E5
    Text: H ig h P e rfo rm a n c e l M x 16 CM OS DRAM » H A S4C1M 16E5 AS4LC1M 16E5 A l M x 16 CM OS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 re fre sh cycles, 16 m s re fre sh in te rv a l - RAS-only or CAS-before-RAS refresh


    OCR Scan     		PDF AS4C1M16E5 AS4LC1M16E5 4C1M16E5-60) 4LC1M16E5-60) 42-pin 4C1M16E5) 44/50-pin 4LC1M16E5) AS4C1M16E5) AS4C1M16E5 4LC1M16E5 4C1M16E5 j13000 j130007a 1m16e 4C1M16E5-60 J1-30007-A 4lc1m16e5-60 AS4LC1M16E5

    Untitled

    Abstract: No abstract text available
    Text: High Perform ance lM x 16 CMOS DRAM A S4C 1M 16E 5 1 M x 16 CMOS EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write


    OCR Scan     		PDF 16E0-60) 42-pin 71pS4C AS4C1M16E5-60JC 1M16E0 42-pin

    T835

    Abstract: No abstract text available
    Text: H ¡ 5»h P i ' r i i » n i i d i n i \ S 4 C I M I 6L:0 A I M X I i C M O S l K \ M \S4I.C I M I 610 I MX 16 CM US LDO DK/l M Preliminary information Features • O r g a n iz a t io n : 1 ,0 4 8 ,5 7 6 w o r d s x 16 b its 1 R e a d - m o d if y - w r it e


    OCR Scan     		PDF AS4C1M16E0 AS4LC1M16E0 16E0-60JC I6E0-60JC 42-pin 16E0-70JC IM16E0 T835

    4LC1M16

    Abstract: 4C1M16 AS4CIM16 IS3015
    Text: H ig h P e r fo r m a n c e 1 M X 16 CM OS DRAM A S 4 C 1 M I6 E 0 A S 4 L C I M 1 6EÓ 1M X J 6 CM OS EDO DRAM Prelim inary inform ation Features • R ead-m odify-w rite • TTL-com patible, three-state I /O • JEDEC standard package and pin o u t - 400 mil, 42-pin SOJ


    OCR Scan     		PDF 4C1M16EO-SO) 42-pin 4C1M16E0) I/015 eiOG3441 AS4C1M16E0 AS4LC1M16E0 AS4C1M16E0-60JC 4LC1M16 4C1M16 AS4CIM16 IS3015

    Untitled

    Abstract: No abstract text available
    Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0


    OCR Scan     		PDF AS4LC1M16EÃ 42-pin 4C1M16EO-SO)

    4C1M16

    Abstract: 1MX16 4LC1M16
    Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout


    OCR Scan     		PDF 1MX16 AS4LC1M16E0 42-pin 4C1M16E0) 4LC1M16E0) 6E0-50 4C1M16E0-60 6E0-70 AS4C1M16E0 4C1M16 4LC1M16

    AS4C1M16ES

    Abstract: 4C1M16E5 LR 3441 1MX16 AS4C1M16E5 LMZ 9 4C1M16E5-60
    Text: H ig h P e r fo r m a n c e lM x 16 CM OS DRAM » II A S4C 1M 16E 5 I lM x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cydes, 16 ms refresh interval - RAS-only o r CAS-before-RAS refresh


    OCR Scan     		PDF AS4C1M16E5 1MX16 4C1M16E0-60) 42-pin 12S4C1M16E5 Capacitance15 42-pin AS4C1M16E5-60JC 1M16E0 AS4C1M16ES 4C1M16E5 LR 3441 AS4C1M16E5 LMZ 9 4C1M16E5-60

    4LCIM16E5-50

    Abstract: 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000
    Text: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 w ords x 16 bits • High speed - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout


    OCR Scan     		PDF 42-pin 4C1M16E5) 50-pin 4LC1M16E5) 4C1M16E5-60) 4LC1M16E5-60) AS4C1M16E5) AS4LC1M16E5) -60JC 16E5-50JC 4LCIM16E5-50 4LCIM16E5 4LC1M16E5 AS4LC1M16ES j130007a 4C1M16E5-60 AS4CIM16E5 j13000

    Untitled

    Abstract: No abstract text available
    Text: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh


    OCR Scan     		PDF