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    IPD50N04S4-08

    Abstract: 4N0408
    Text: IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD50N04S4-08 PG-TO252-3-313 4N0408 IPD50N04S4-08 4N0408

    4N0408

    Abstract: IPG20N04S4-08 PG-TDSON-8-4
    Text: IPG20N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max4) 7.6 mW ID 20 A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N04S4-08 4N0408 4N0408 IPG20N04S4-08 PG-TDSON-8-4

    4N0408

    Abstract: No abstract text available
    Text: IPG20N04S4-08A OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS on ,max4) 7.6 mΩ ID 20 A Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N04S4-08A PG-TDSON-8-10 4N0408 4N0408