Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Feature Ultra low cost. Very low resistance . Power Choke T /H Type Electrical Operating Temperature: -20℃ to 105℃ Tolerance of Inductance:.500uH Min Temperature Rise Current: The Value of DC Current When △T<40℃ Applications Motherboards For Laptop and desktop computers.
|
Original
|
PDF
|
500uH
|
TopWard
Abstract: SM68009L TPT-500 flux 729 no clean SM6800 FERRITE TRANSFORMER MAG-TEK magtek SN96 SM680
Text: SPECIFICATION FOR APPROVAL PAGE. 1 PROD. NAME TRANSFORMER DWG. NO. SM68009L A. ELECTRICAL SPECIFICATIONS @25℃ OCL:500uH Min 1-3 @ 100KHz,0.1V LL:1.2uH Max @100KHz,0.1V Cw/w:12PF Max @100KHz,0.1V DCR:1-3=0.56 ohm Max 6-4=0.224 ohm Max Turn Ratio:(1-3):(6-4)=2.5CT:1CT±5%
|
Original
|
PDF
|
SM68009L
500uH
100KHz
500mA
2000VAC
-40TO
Sn05pb95Solder
TopWard
SM68009L
TPT-500
flux 729 no clean
SM6800
FERRITE TRANSFORMER
MAG-TEK
magtek
SN96
SM680
|
Untitled
Abstract: No abstract text available
Text: SPECIFICATIONS Power Choke Through Hole Type Feature Ultra low cost. Very low resistance . Electrical Operating Temperature: -20℃ to +105℃ Tolerance of Inductance:.500Uh Min Temperature Rise Current: The Value of DC Current When △T<40℃ Applications
|
Original
|
PDF
|
500Uh
|
IT1172
Abstract: No abstract text available
Text: BFL4036 Ordering number : ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4036 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.4Ω (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications
|
Original
|
PDF
|
BFL4036
ENA1830
1000pF
A1830-5/5
IT1172
|
Untitled
Abstract: No abstract text available
Text: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance
|
Original
|
PDF
|
ATP613
ENA1903
350pF
A1903-5/5
|
Untitled
Abstract: No abstract text available
Text: BFL4007 Ordering number : ENA1689 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4007 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=95ns typ Input capacitance Ciss=1200pF (typ) • • ON-resistance RDS(on)=0.52Ω (typ)
|
Original
|
PDF
|
BFL4007
ENA1689
1200pF
A1689-5/5
|
FL4037
Abstract: No abstract text available
Text: BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
|
Original
|
PDF
|
BFL4037
ENA1831
1200pF
A1831-5/5
FL4037
|
*e13007
Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
|
Original
|
PDF
|
MJE13007
MJE13007
O-220
QW-R203-019
*e13007
bipolar transistor td tr ts tf
equivalent of transistor mje13007
|
l6562 flyback led design
Abstract: AN2711 l6562 flyback design L6562A Spice LC filter dimmer Triac l6562 led dimming design l6562 spice mode AN2711 Triac dimmable LED driver based on the L6562A flyback l6562 triac spice model
Text: AN2711 Application note 15 W offline TRIAC dimmable LED driver Introduction The cost of power LEDs is rapidly coming down, while performance is improving. Their efficacy light out per watt in is now competitive with compact fluorescent lamps, while their
|
Original
|
PDF
|
AN2711
l6562 flyback led design
AN2711
l6562 flyback design
L6562A Spice
LC filter dimmer Triac
l6562 led dimming design
l6562 spice mode
AN2711 Triac dimmable LED driver based on the L6562A
flyback l6562
triac spice model
|
Untitled
Abstract: No abstract text available
Text: R5016ANX Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.27Ω ID ±16A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance.
|
Original
|
PDF
|
R5016ANX
O-220FM
|
R5009FNX
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R5009FNX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage
|
Original
|
PDF
|
R5009FNX
O-220FM
R1120A
R5009FNX
|
CMC120
Abstract: No abstract text available
Text: 1. M echanical: 2. S c h e m a t i c : 1 o- -O 4 r^r>r>r>r>r\ 2 ° - 1 1- ° 3 3. E le ctric al OCL: 500uH Min @ 15.75KH z, Rated C u rre n t: DCR: 0 .0 0 8 Ohm s Max, Each Wdg Max @ 100KHz, 0 .1 V S h o rt 2 - 3 Iso la tio n V o lta g e :
|
OCR Scan
|
PDF
|
XF5006Aâ
CMC120
F000PRINT
500uH
75KHz,
100KHz,
1250Vrms
UL94V-0
|
208H
Abstract: No abstract text available
Text: 2 . Sch em atic: 1. M echanical D im ensions: 0.260 Max 8 • PRI 5 XFMRS 1 o- • -o 8 c• Cl -o 7 4 0 XF5006 m o CNI ro • —2GD 1 1 SEC 3. E lectrical S p ecification s: 25°C 4 OCL: Pins 1 - 4 500uH Min @10KHz, 0.1V LL: Pins 1— 4 17uH Max 100KHz, 0.1V Short Secs
|
OCR Scan
|
PDF
|
XF5006
500uH
10KHz,
100KHz,
1500Vdc
MIL-STD-202G,
UL94V-0
E151556
102mm)
208H
|
Untitled
Abstract: No abstract text available
Text: 2. S c h e m a t i c : 1. M e c h a n ic a l D im e n s i o n s : 1 oPRI -o 4 o- 8 SEC 2 O- -o 5 Shleld 6 o- 3. E l e c t r i c a l S p e c i f i c a t i o n s : OCL: Pins 1 - 4 600uH Min 100KHz 0.1V OCL: Pins 1 - 4 500uH Min 1 QQKHz D.1V -4 0 C to +85C LL; Pins 1 - 4
|
OCR Scan
|
PDF
|
600uH
100KHz
500uH
16KHz-100MHz
1500Vac,
500Vac,
MIL-STD-2026,
UL94V-0
|
|
|
Untitled
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 5 .8 4 M ax 5 1 o- £ -o 6 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 500uH ±25% @ 10K H z 0 .1 V 0CL: Pins 5 - 8 9 .5 0 m H ± 2 5 % <§>10KHz 0.1V
|
OCR Scan
|
PDF
|
XF5006â
500uHÂ
10KHz
500uH
100KHz
1500Vac,
E151556
102mm)
92KHz
|
208H
Abstract: 500uH
Text: 1. M e c h a n ic a l D im e n s i o n s : Schem atic: 2. B 0.600 Max is ?x x -q E 00.032 ±0.005 3. E l e c t r i c a l S p e c i f i c a t i o n s : 2 5 “C OCL: 500uH± 10% I.OKHz 1.0V ±0.100 0.560 ±0.050 C u rre n t R ating: 1 .5ADC M a xim u m
|
OCR Scan
|
PDF
|
500uHÂ
MIL-STD-2025,
UL94V-0
155-C.
2XF0500-VQ
Nov-22-07
208H
500uH
|
Untitled
Abstract: No abstract text available
Text: 2 1. M e c h a n ic a l D im e n s io n s : D .2 5 0 n a . Sch e m atic: Max 30- -o 4 20- -o 5 1 o- -o 6 n 3 I C X O XF5006A -E E 5 S CD U « YYWW r- 3 C II tu b b A 0.240 Max 0.01 0 ± 0 ,0 0 5 3. E l e c t r i c a l OCL: Pins 3 - 1 500uH Min @10KHz, Pins
|
OCR Scan
|
PDF
|
XF5006A
500uH
10KHz,
-l-125
10Zmm)
XF5006Aâ
|
csi-2
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : c 5 .8 4 M ax £ 1 o- 5 4o- -o 8 x o O •CD lTI 3. E l e c t r i c a l S p e c i f i c a t i o n s : Osi OCL: Pins 1 - 4 500uH Min @192KHz 0,1V LL: Pins 1 - 4 0.500uH Max @100KHz 0.1V sh o rt 5 - 8
|
OCR Scan
|
PDF
|
XF5756â
500uH
192KHz
100KHz
1000Vac,
E151556
102mm)
92KHz
csi-2
|
CMC120
Abstract: No abstract text available
Text: 1. M e c h a n ic a l: 2. S c h e m a t i c : 1 o- -O 2 /•^v- ' y ' v ' y ' v 'n 4 ° -1 LÆ r"LO i LO o fO 1-° 3 3. E le ctric al OCL: EACH WDG, 500uH ±30% 1OKHz, 0.1 V Rated Current: 10.0Amps DCR: EACH WDG, 0.006 OHMS MAX LL: P1 — 4, 5.4uH Typ @100KHz, 0.1V
|
OCR Scan
|
PDF
|
XF5006-CMC120
500uHÂ
100KHz,
1500Vrms
F000PRINT
MIL-STD-20ZG,
UL94-V-0
El51556
CMC120
|
K7200
Abstract: K720 XF5756-ER9 XFMR K-7200 07011e ULJ94-V-0
Text: 1. M echanical Dimensions: 2. Schem atic: 5 1 o- 4 o- -o 8 3. Electrical Specifications: 0CL: Pins 1 - 4 500uH Min 192KHz 0.1V Leakage L: Pins 1 - 4 0.500uH Max 100KHz 0.1V DCR: 0.210 Ohms Max Each wdg T u rn s 2.00 R a tio : Is o la tio n : P ins 1000V ac
|
OCR Scan
|
PDF
|
XF5756â
500uH
192KHz
100KHz
1000Vac
MIL-STD-202,
ULJ94V-0
El51556
K7200
K720
XF5756-ER9
XFMR
K-7200
07011e
ULJ94-V-0
|
3pra
Abstract: VM280
Text: 1. M e c h a n ic a l D im e n s io n a : 2. S c h e m a t i c : E 1.10 Max o- 2 o- 3. E l e c t r i c a l S p e c i f i c a t i o n s : Oh eh OCL: 9 0 0 u H i 15% @1KHz 0.1V 500uH Min @1KHz 0.1V 3.75Adc 1 Q: 35 Min @1KHz 0.1V D 0 .900 RATED CURRENT: 3.75Adc
|
OCR Scan
|
PDF
|
XF9006-VM280
900uHi
500uH
75Adc
MIL-STD-202G.
UL94V-<
E151556
3pra
VM280
|
MIL-STD-20Z
Abstract: No abstract text available
Text: 1. M echanical D im ensions: 2. S ch em atic: o- 0 1 .0 5 o- 3. E lectrical In d u c ta n c e : S p ecification s: 500uH ±10% IDC: 3 .0 Adc B ased Irm s: 25 A rm s Max DC R esistance: 0 .0 7 5 @1 0KHz,0.1 V on 30% dro p in OCL O hm s Max C 10.00 N o tes:
|
OCR Scan
|
PDF
|
500uHÂ
10KHz
UL94V-0
E151556
102mm)
XF5006Hâ
Aug-09â
MIL-STD-20Z
|
CTX02-12236
Abstract: CTX02 500uH electronic schematic
Text: FRONT VIEW RECOMMENDED PCB LAYOUT - 29.7 ± 1. 0- Ô ELECTRICAL CHARACTERISTICS 1. OCL @ 100kHz, O.lOVrms & O.OAdc. 678.0 - 829.0uH. 2. OCL @ 100kHz, O.lOVrms & 2.60Adc. 528.0uH min DCR @ 20°C; 0.20 Ohm max. BOTTOM VIEW SCHEMATIC IO 500uH @ 2.6A. 20 Notes:
|
OCR Scan
|
PDF
|
100kHz,
60Adc.
500uH
CTX02-12236
4CTX02-12236
CTX02
500uH
electronic schematic
|
RJ12 pin configuration
Abstract: Amphenol RJMG 2x75 RJ12 PINOUT
Text: D E F REVISIONS SYM ZONE H y / y — LED 2 ECN, ERN NO. ADD TU R N R ATIO N DATE ”9 ” H1 TYPING C O R R EC TIO N H2 ADD D IM . ETC TO L, APPRD. 2 0 0 1 / 0 1 / 2 6 S.C. 2 0 0 1 / 0 8 / 0 8 S.C. 2 0 0 1 / 0 9 / 2 6 D.U.U. 14 .0 8 ± 0 .0 8 [.5 4 4 ± .0 0 3 ]
|
OCR Scan
|
PDF
|
|
