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    50N80 Search Results

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    50N80 Price and Stock

    onsemi FCD850N80Z

    MOSFET N-CH 800V 6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCD850N80Z Cut Tape 18,374 1
    • 1 $3.13
    • 10 $2.034
    • 100 $3.13
    • 1000 $1.05982
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    FCD850N80Z Reel 17,500 2,500
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    Avnet Americas FCD850N80Z Reel 17 Weeks 2,500
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    Mouser Electronics FCD850N80Z 10,708
    • 1 $1.85
    • 10 $1.43
    • 100 $1.15
    • 1000 $1.02
    • 10000 $0.997
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    Newark FCD850N80Z Reel 2,500
    • 1 $1.36
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    FCD850N80Z Cut Tape 1
    • 1 $2.1
    • 10 $1.86
    • 100 $1.64
    • 1000 $1.34
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    Ameya Holding Limited FCD850N80Z 1,059
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    Richardson RFPD FCD850N80Z 2,500
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    Avnet Asia FCD850N80Z 17 Weeks 2,500
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    Avnet Silica FCD850N80Z 18 Weeks 2,500
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    Chip1Stop FCD850N80Z Cut Tape 2,500
    • 1 $1.2
    • 10 $1.12
    • 100 $1.08
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    • 10000 $0.954
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    EBV Elektronik FCD850N80Z 5,000 19 Weeks 2,500
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    Flip Electronics FCD850N80Z 5,000
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    New Advantage Corporation FCD850N80Z 5,000 1
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    Wuhan P&S FCD850N80Z 2,250 1
    • 1 $2.82
    • 10 $2.82
    • 100 $1.8
    • 1000 $1.37
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    onsemi FCD2250N80Z

    MOSFET N-CH 800V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCD2250N80Z Cut Tape 14,495 1
    • 1 $2.26
    • 10 $1.45
    • 100 $2.26
    • 1000 $0.72607
    • 10000 $0.72607
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    FCD2250N80Z Digi-Reel 14,495 1
    • 1 $2.26
    • 10 $1.45
    • 100 $2.26
    • 1000 $0.72607
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    FCD2250N80Z Reel 12,500 2,500
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    Avnet Americas FCD2250N80Z Reel 17 Weeks 2,500
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    • 10000 $0.61667
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    Mouser Electronics FCD2250N80Z 3,307
    • 1 $1.33
    • 10 $1.01
    • 100 $0.797
    • 1000 $0.668
    • 10000 $0.647
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    Newark FCD2250N80Z Cut Tape 1
    • 1 $1.39
    • 10 $1.23
    • 100 $1.06
    • 1000 $0.873
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    FCD2250N80Z Reel 2,500
    • 1 $0.891
    • 10 $0.891
    • 100 $0.891
    • 1000 $0.891
    • 10000 $0.777
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    Richardson RFPD FCD2250N80Z 2,500
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    Avnet Silica FCD2250N80Z 18 Weeks 2,500
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    Chip1Stop FCD2250N80Z Cut Tape 3
    • 1 $0.73
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    EBV Elektronik FCD2250N80Z 19 Weeks 2,500
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    Flip Electronics FCD2250N80Z 2,500
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    onsemi FDBL0150N80

    MOSFET N-CH 80V 300A 8HPSOF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDBL0150N80 Digi-Reel 1,270 1
    • 1 $5.74
    • 10 $3.843
    • 100 $5.74
    • 1000 $2.29562
    • 10000 $2.29562
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    FDBL0150N80 Cut Tape 1,270 1
    • 1 $5.74
    • 10 $3.843
    • 100 $5.74
    • 1000 $2.29562
    • 10000 $2.29562
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    Avnet Americas FDBL0150N80 Reel 22 Weeks 2,000
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    Mouser Electronics FDBL0150N80
    • 1 $4.87
    • 10 $3.41
    • 100 $2.54
    • 1000 $2.3
    • 10000 $2.29
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    Newark FDBL0150N80 Cut Tape 1,942 1
    • 1 $5.06
    • 10 $3.55
    • 100 $2.63
    • 1000 $2.39
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    FDBL0150N80 Reel 2,000
    • 1 $2.89
    • 10 $2.89
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    • 1000 $2.89
    • 10000 $2.58
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    Rochester Electronics FDBL0150N80 1 1
    • 1 $2.55
    • 10 $2.55
    • 100 $2.4
    • 1000 $2.17
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    Richardson RFPD FDBL0150N80 2,000
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    Avnet Silica FDBL0150N80 23 Weeks 2,000
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    EBV Elektronik FDBL0150N80 24 Weeks 2,000
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    Win Source Electronics FDBL0150N80 48,200
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    • 100 $2.6967
    • 1000 $2.4177
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    onsemi FCPF650N80Z

    MOSFET N-CH 800V 8A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCPF650N80Z Tube 986 1
    • 1 $4.21
    • 10 $4.21
    • 100 $4.21
    • 1000 $1.51112
    • 10000 $1.51112
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    Avnet Americas FCPF650N80Z Tube 0 Weeks, 2 Days 414
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    • 1000 $1.44595
    • 10000 $1.42296
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    FCPF650N80Z Tube 17 Weeks 1,000
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    • 1000 $1.47427
    • 10000 $1.42224
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    Mouser Electronics FCPF650N80Z 2,135
    • 1 $2.27
    • 10 $2.03
    • 100 $1.52
    • 1000 $1.51
    • 10000 $1.51
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    Newark FCPF650N80Z Bulk 1,000
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    • 1000 $1.61
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    Bristol Electronics FCPF650N80Z 2,190
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    Rochester Electronics FCPF650N80Z 988 1
    • 1 $1.68
    • 10 $1.68
    • 100 $1.58
    • 1000 $1.43
    • 10000 $1.43
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    Richardson RFPD FCPF650N80Z 1,000
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    Avnet Asia FCPF650N80Z 17 Weeks 1,000
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    • 10000 $1.49247
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    Avnet Silica FCPF650N80Z 18 Weeks 50
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    EBV Elektronik FCPF650N80Z 19 Weeks 50
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    Flip Electronics FCPF650N80Z 11,082
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    Wuhan P&S FCPF650N80Z 563 1
    • 1 $4.22
    • 10 $4.22
    • 100 $2.7
    • 1000 $2.04
    • 10000 $2.04
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    onsemi NTPF450N80S3Z

    MOSFET N-CH 800V 11A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTPF450N80S3Z Tube 908 1
    • 1 $3.9
    • 10 $3.9
    • 100 $3.9
    • 1000 $1.37412
    • 10000 $1.36588
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    Avnet Americas NTPF450N80S3Z Tube 22 Weeks 1,000
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    • 1000 $1.33256
    • 10000 $1.28553
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    Mouser Electronics NTPF450N80S3Z 3,837
    • 1 $2.06
    • 10 $1.88
    • 100 $1.37
    • 1000 $1.36
    • 10000 $1.36
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    Newark NTPF450N80S3Z Bulk 986 1
    • 1 $2.42
    • 10 $2.23
    • 100 $1.7
    • 1000 $1.7
    • 10000 $1.7
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    Rochester Electronics NTPF450N80S3Z 34,000 1
    • 1 $1.52
    • 10 $1.52
    • 100 $1.43
    • 1000 $1.29
    • 10000 $1.29
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    Richardson RFPD NTPF450N80S3Z 1,000
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    • 1000 $1.37
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    Avnet Silica NTPF450N80S3Z 23 Weeks 50
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    EBV Elektronik NTPF450N80S3Z 24 Weeks 50
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    Flip Electronics NTPF450N80S3Z 54,000
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    Wuhan P&S NTPF450N80S3Z 784 1
    • 1 $3.81
    • 10 $3.81
    • 100 $2.44
    • 1000 $1.85
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    50N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50n60

    Abstract: G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623
    Text: Advanced Technical Information IGBT with Reverse Blocking capability VCES = 600 / 800V IC25 = 60 A VCE sat = 2.5 V tf = 75 ns IXRH 50N80 IXRH 50N60 C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol Conditions


    Original
    PDF 50N80 50N60 O-247 50n60 G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623

    50n80

    Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    PDF 50N80Q2 264TM 728B1 50n80 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q

    50n80

    Abstract: 50N80Q2 IXFN50N80Q2
    Text: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original
    PDF 50N80Q2 OT-227 E153432 728B1 123B1 728B1 065B1 50n80 50N80Q2 IXFN50N80Q2

    IXFB

    Abstract: 50N80Q2 IXFB50N80Q2 50n80
    Text: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    PDF 50N80Q2 264TM IXFB 50N80Q2 IXFB50N80Q2 50n80

    50N80Q2

    Abstract: IXFB50N80Q2 264TM
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    PDF 50N80Q2 264TM 150imited 728B1 50N80Q2 IXFB50N80Q2 264TM

    50N80Q2

    Abstract: IXFN50N80Q2
    Text: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


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    PDF 50N80Q2 OT-227 E153432 50N80Q2 IXFN50N80Q2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


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    PDF 50N80Q2 264TM 728B1

    A 69157 scr

    Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
    Text: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)


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    PDF 74K5145 74K5144 74K5146 74K5147 74K5166 74K5170 71K0256 71K0273 71K0255 71K0272 A 69157 scr HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    60N60A

    Abstract: c5021-0
    Text: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90


    OCR Scan
    PDF 50N60AU1 O-264 JEDECTO-264AA 100-C 50N60AU1 60N60A c5021-0

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    PDF 9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6

    Untitled

    Abstract: No abstract text available
    Text: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20


    OCR Scan
    PDF 50N60AU1 25cCto O-247 50N80AU1 1999IXYS

    ixys ml 075

    Abstract: 50N60A
    Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES


    OCR Scan
    PDF IXGX50N60AU1 IXGX50N60AU1S 50N60AU1 ixys ml 075 50N60A