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    IXFB Price and Stock

    Littelfuse Inc IXFB44N100P

    MOSFET N-CH 1000V 44A PLUS264
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    DigiKey IXFB44N100P Tube 300 1
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    Littelfuse Inc IXFB30N120P

    MOSFET N-CH 1200V 30A PLUS264
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    Littelfuse Inc IXFB60N80P

    MOSFET N-CH 800V 60A PLUS264
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    Littelfuse Inc IXFB132N50P3

    MOSFET N-CH 500V 132A PLUS264
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    DigiKey IXFB132N50P3 Tube 275 1
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    Littelfuse Inc IXFB70N100X

    MOSFET N-CH 1000V 70A PLUS264
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    DigiKey IXFB70N100X Tube 203 1
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    IXFB Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFB100N50P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 100A PLUS264 Original PDF
    IXFB100N50Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 100A PLUS264 Original PDF
    IXFB110N60P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 110A PLUS264 Original PDF
    IXFB120N50P2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 120A PLUS264 Original PDF
    IXFB132N50P3 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 132A PLUS264 Original PDF
    IXFB150N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 150A PLUS264 Original PDF
    IXFB170N30P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TO-264 Original PDF
    IXFB210N20P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 210A PLUS264 Original PDF
    IXFB210N30P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 210A TO-263AA Original PDF
    IXFB300N10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 300A PLUS264 Original PDF
    IXFB30N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A PLUS264 Original PDF
    IXFB38N100Q IXYS TRANS MOSFET N-CH 1000V 38A 3PLUS 264 Original PDF
    IXFB38N100Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFB40N110P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1100V 40A PLUS264 Original PDF
    IXFB40N110Q3 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1100V 40A PLUS264 Original PDF
    IXFB44N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264 Original PDF
    IXFB44N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 44A PLUS264 Original PDF
    IXFB 50N80Q2 IXYS TRANS MOSFET N-CH 800V 50A 3PLUS 264 Original PDF
    IXFB50N80Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFB50N80Q2 IXYS HiPerFET Power MOSFET Original PDF

    IXFB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFB100N50

    Abstract: No abstract text available
    Text: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB100N50Q3 250ns PLUS264TM 100N50Q3 IXFB100N50

    IXFB120N50P2

    Abstract: No abstract text available
    Text: IXFB120N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 RDS on = 500V = 120A ≤ 43mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB120N50P2 PLUS264TM 120N50P2 2-10-A IXFB120N50P2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB50N80Q2 300ns PLUS264 50N80Q2 1-18-10-C

    IXFB40N110P

    Abstract: IXFB 40N110P 40n110p F40N
    Text: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB40N110P 300ns PLUS264TM 40N110P 3-28-08-A IXFB40N110P IXFB 40N110P F40N

    100N50P

    Abstract: mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30


    Original     		PDF 100N50P 100N50P mosfet IXFB 100n50p IXFB100N50P 100N50 NS1250

    IXFB80N50Q2

    Abstract: 80N50Q2
    Text: HiPerFETTM Power MOSFETs IXFB80N50Q2 VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFB80N50Q2 250ns PLUS264TM( 80N50Q2 7-20-07-F IXFB80N50Q2

    70n60

    Abstract: IXFB70N60Q2
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 70N60Q2 264TM 728B1 70n60 IXFB70N60Q2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFB210N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   300V 210A  14.5m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB210N30P3 250ns PLUS264TM 100ms 210N30P3

    Untitled

    Abstract: No abstract text available
    Text: IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = =   100V 300A  5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M


    Original     		PDF IXFB300N10P 200ns PLUS264TM 100ms 300N10P

    38N100Q

    Abstract: 98949
    Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 38N100Q 264TM 150ited 728B1 38N100Q 98949

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFB70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFB70N60Q2 250ns PLUS264TM 70N60Q2 8-08-A

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on ≤ ≤ trr IXFB80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFB80N50Q2 250ns PLUS264TM( 80N50Q2 7-20-07-F

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFB52N90P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 52A Ω 160mΩ 300ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFB52N90P 300ns PLUS264TM 52N90P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB300N10P 200ns PLUS264TM 100ms 300N10P

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFB 72N55Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 72N55Q2 264TM 728B1 123B1 728B1 065B1

    50n80

    Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 50N80Q2 264TM 728B1 50n80 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q

    DS100341

    Abstract: PLUS264TM
    Text: Advance Technical Information IXFB62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 800V 62A Ω 140mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFB62N80Q3 300ns PLUS264TM 62N80Q3 DS100341

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 80N50Q 264TM 728B1

    38N100Q2

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 1000 V V DSS ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 38N100Q2 264TM 728B1 38N100Q2

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 100N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS


    Original     		PDF 100N50P PLUS264TM

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N30P3 RDS on trr = = ≤ ≤ 300V 210A Ω 14.5mΩ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFB210N30P3 250ns PLUS264TM 100ms 210N30P3

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 82N60P PLUS264TM

    IXFB

    Abstract: 50N80Q2 IXFB50N80Q2 50n80
    Text: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 50N80Q2 264TM IXFB 50N80Q2 IXFB50N80Q2 50n80

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   600V 110A  56m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB110N60P3 250ns PLUS264TM 110N60P3