WL4 550
Abstract: Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 SOJ-28
Text: 2M x 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • • • • • • • • 2 097 152 words by 8-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC
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5117800BSJ-50/-60/-70
GPJ05699
P-SOJ-28-3
WL4 550
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
SOJ-28
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Q67100-Q2018
Abstract: Q67100-Q2019 Q67100-Q976 Q67100-Q977
Text: 2M x 32-Bit Dynamic RAM Module HYM 322030S/GS-60/-70 Advanced Information • 2 097 152 words by 32-bit organization • • Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time 130 ns cycle time (-70 version) CAS-before-RAS refresh
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32-Bit
322030S/GS-60/-70
L-SIM-72-9
Q67100-Q2018
Q67100-Q2019
Q67100-Q976
Q67100-Q977
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HYB5117800
Abstract: HYB3117800 smd marking AAAA wl4 smd marking
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode 5117800BJ/BSJ-50/-60 HYB3117800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •
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HYB5117800BJ/BSJ-50/-60
HYB3117800BJ
HYB5117800
HYB3117800
117800BJ
P-SOJ-28-4
300mil)
SOJ-28
P-SOJ-28-3
HYB5117800
HYB3117800
smd marking AAAA
wl4 smd marking
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Untitled
Abstract: No abstract text available
Text: 2M x 32-Bit Dynamic RAM Module HYM 322030S/GS-50/-60/-70 Advanced Information • 2 097 152 words by 32-bit organization • 1 memory bank • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)
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Original
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PDF
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32-Bit
322030S/GS-50/-60/-70
32-Bit
GLS05789
L-SIM-72-9
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HYB3117800
Abstract: HYB5117800 SOJ-28
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC
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5117800/BSJ-50/-60
3117800BSJ-50/-60
HYB5117800
HYB3117800
SPT03042
117800/BSJ-50/-60
GPJ05699
P-SOJ-28-3
400mil)
HYB3117800
HYB5117800
SOJ-28
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
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5117800BSJ-50/-60/-70
fiE35LD5
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: AC lCAC RAS access time -50 -60 -70 50 60 70 ns CAS access time 13 15
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5117800BSJ-50/-60/-70
P-SOJ-28-3
0235bD5
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Untitled
Abstract: No abstract text available
Text: HB56A232D Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-300 Z Description The HB56A232D is a 2 M x 32 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces o f 16-Mbit DRAM (HM 5117800BTT) sealed in TSOP package. An outline o f the
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HB56A232D
152-word
32-bit
ADE-203-300
16-Mbit
5117800BTT)
72-pin
HB56A232D
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siemens FCVP
Abstract: No abstract text available
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 A d v a n c e d In fo rm a tio n • 2 0 9 7 152 w o rd s by 8 -b it o rg a n iz a tio n • S in g le + 5 V ± 10 % su p p ly • 0 to 70 C o p e ra tin g te m p e ra tu re • Low p o w e r d issip a tio n
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5117800BSJ-50/-60/-70
siemens FCVP
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Siemens 3SB 180
Abstract: TNC 24 mk 2 Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 siemens FLH 5117800BSJ-50
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Information • • • • 2 097 152 words by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
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5117800BSJ-50/-60/-70
110ns
235b05
Siemens 3SB 180
TNC 24 mk 2
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
siemens FLH
5117800BSJ-50
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 8-Bit Dynamic RAM 2k-Refresh HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • 2 097 152 words by 8-bit organization • 0 to 70 ‘C operating temperature • Performance: -50 -60 -70 ÍRAC RAS access time 50 60 70 JCAC CAS access time 13 15
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5117800BSJ-50/-60/-70
P-SOJ-28-3
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •
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OCR Scan
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PDF
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5117800/BSJ-50/-60
3117800BSJ-50/-60
HYB5117800
HYB3117800
117800/BSJ-50/-60
P-SOJ-28-3
400mil)
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Untitled
Abstract: No abstract text available
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A264EJ
152-word
64-bit
16-MbitDRAM
5117800B
16-bitBiCMOS
T16244)
168-pin
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HB56D836SBT-AC
Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms
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72-pin
A132BV/BU-B/BL
HB56A132SBV-B/BL
HB56A132BV/BU-C/CL
HB56A132SBV-C/CL
HB56A132BW-B/BL
HB56A132SBW-B/BL
HB56A132BW-C/CL
HB56A132SBW-C/CL
HB56A232BT-B/BL
HB56D836SBT-AC
power bank 5v
4Mx1
514400C
m514400c
473e
HM514400BS BLS
B56A
HM5116400ATS
5117800B
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thv8
Abstract: HYB39S16800T 16m x 4 hyb
Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15
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L-SIM-72-12
324020S/GS
324025S/GS
L-SIM-72-15
328020S/GS
328025S/GS
364020S/GS
L-SIM-72-13
364035S/GS
thv8
HYB39S16800T
16m x 4 hyb
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Q67100-Q2018
Abstract: Q67100-Q2019 Q67100-Q976 Q67100-Q977
Text: SIEM EN S 2M X 32-Bit Dynamic RAM Module HYM 322030S/GS-60/-70 Advanced Inform ation 2 097 152 words by 32-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle tim e -60 version 70 ns access time 130 ns cycle tim e (-70 version)
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OCR Scan
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PDF
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32-Bit
322030S/GS-60/-70
L-SIM-72-9
A235b05
0D7173Ã
Q67100-Q2018
Q67100-Q2019
Q67100-Q976
Q67100-Q977
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HM5117800BJ7
Abstract: No abstract text available
Text: 5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5, 1996 Description The Hitachi 5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 5117800B offers Fast
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PDF
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800BJ7
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
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P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
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HM5117800BLTT6
Abstract: No abstract text available
Text: 5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5,1996 Description The Hitachi 5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 5117800B offers Fast
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PDF
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800BLTT6
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BT 804
Abstract: No abstract text available
Text: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13
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32-Bit
B166-H6993-X-7600,
BT 804
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322030S/GS-50/-60/-70 Advanced Inform ation • 2 097 152 words by 32-bit organization • 1 memory bank • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)
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OCR Scan
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PDF
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32-Bit
322030S/GS-50/-60/-70
023SbG5
0DBS315
32-Bit
23SbG5
fl23SbOS
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3165805AT-60
Abstract: Q67100
Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60
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3116160BSJ-50
311616QBSJ-60
3116160BSJ-70
3116160BST-50
3116160BST-60
3116160BST-70
3116165BSJ-50
3116165BSJ-60
3116165BSJ-70
3116165BST-50
3165805AT-60
Q67100
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 5 1 17 8 0 0 B .H Y 5 1 16 8 0 0 B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY5117800B
HY5116800B
A0-A11)
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