PIC16CE62X
Abstract: No abstract text available
Text: PIC16CE62X OTP 8-Bit CMOS MCU with EEPROM Data Memory Devices included in this data sheet: Pin Diagrams • PIC16CE623 • PIC16CE624 • PIC16CE625 PDIP, SOIC, Windowed CERDIP Device Program Memory RAM Data Memory EEPROM Data Memory PIC16CE623 512x14 96x8
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PIC16CE62X
PIC16CE623
PIC16CE624
PIC16CE625
512x14
1Kx14
2Kx14
128x8
PIC16CE62X
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IBM0418A80QLAB
Abstract: IBM0436A40QLAB IBM0436A80QLAB
Text: . Preliminary IBM0418A80QLAB IBM0436A80QLAB IBM0418A40QLAB IBM0436A40QLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 Organizations • 128K x 36 or 256K x 18 Organizations • 0.25 Micron CMOS Technology • Synchronous Flow Thru Mode of Operation with
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IBM0418A80QLAB
IBM0436A80QLAB
IBM0418A40QLAB
IBM0436A40QLAB
256Kx36
512x18)
128Kx36
256Kx18)
IBM0436A40QLAB
IBM0436A80QLAB
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IBM0418a81qlaa
Abstract: No abstract text available
Text: . Preliminary IBM0418A81QLAA IBM0436A81QLAA IBM0418A41QLAA IBM0436A41QLAA 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O
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IBM0418A81QLAA
IBM0436A81QLAA
IBM0418A41QLAA
IBM0436A41QLAA
256Kx36
512x18)
128Kx36
256Kx18)
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512X16 sram
Abstract: SRAM timing static SRAM single port
Text: d110001 512X16, Mux 8, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 512X16 SRAM is a high-performance, synchronous single-port, 512-word by 16-bit memory designed to
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d110001
512X16,
512X16
512-word
16-bit
61mm2
HS300-SS
99Q3P0
512X16 sram
SRAM timing
static SRAM single port
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Untitled
Abstract: No abstract text available
Text: . Preliminary IBM0418A81ELAB IBM0436A81ELAB IBM0418A41ELAB IBM0436A41ELAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O
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IBM0418A81ELAB
IBM0436A81ELAB
IBM0418A41ELAB
IBM0436A41ELAB
256Kx36
512x18)
128Kx36
256Kx18)
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PDF
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IBM0418A41DLAB
Abstract: IBM0418A81DLAB IBM0436A41DLAB IBM0436A81DLAB
Text: . IBM0418A81DLAB IBM0436A81DLAB IBM0418A41DLAB IBM0436A41DLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology • Registered Outputs
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IBM0418A81DLAB
IBM0436A81DLAB
IBM0418A41DLAB
IBM0436A41DLAB
256Kx36
512x18)
128Kx36
256Kx18)
crrh3319
IBM0418A41DLAB
IBM0418A81DLAB
IBM0436A41DLAB
IBM0436A81DLAB
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IBM0418A81QLAA
Abstract: IBM0436A81QLAA
Text: . IBM0418A81QLAA IBM0436A81QLAA IBM0418A41QLAA IBM0436A41QLAA 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology • Synchronous Pipeline Mode of Operation with
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IBM0418A81QLAA
IBM0436A81QLAA
IBM0418A41QLAA
IBM0436A41QLAA
256Kx36
512x18)
128Kx36
256Kx18)
trrh3316
IBM0436A81QLAA
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IBM0418A41BLAB
Abstract: IBM0418A81BLAB IBM0436A41BLAB IBM0436A81BLAB
Text: . Preliminary IBM0418A81BLAB IBM0436A81BLAB IBM0418A41BLAB IBM0436A41BLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology
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IBM0418A81BLAB
IBM0436A81BLAB
IBM0418A41BLAB
IBM0436A41BLAB
256Kx36
512x18)
128Kx36
256Kx18)
crrh2519
IBM0436A41BLAB
IBM0436A81BLAB
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ACT7804-20
Abstract: SN74ACT7804 SN74ACT7806 SN74ACT7814
Text: SN74ACT7804 512x18 STROBED FIRST-IN, FIRST-OUT MEMORY S C A S 2 0 4 A -A P R IL 1992 - REVISED S E P TEM B E R 1995 Member of the Texas Instruments Widebus Family Load Clock and Unload Clock Can Be Asynchronous or Coincident 512 Words by 18 Bits Low-Power Advanced CMOS Technology
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SN74ACT7804
512x18
SCAS204A
50-pF
SN74ACT7806
SN74ACT7814
300-mil
25-mil
ACT7804-20
SN74ACT7804
SN74ACT7814
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LA 7804 ON
Abstract: ci LA 7804 ON SN74ACT7804 SN74ALVC7804 W256
Text: SN74ALVC7804 512x18 FIRST-IN, FIRST-OUT MEMORY SCAS432 - JANUARY 1995 DL PACKAGE TOP VIEW • Operates at 3-V to 3.6-V V c c * Load Clock and Unload Clock Can Be Asynchronous or Coincident RESET [ 1 • Low-Power Advanced CMOS Technology D17 [ 2 * Full, Empty, and Half-Full Flags
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SN74ALVC7804
512x18
SCAS432
50-pF
SN74ACT7804
300-mil
25-mil
18-biternal
LA 7804 ON
ci LA 7804 ON
SN74ACT7804
W256
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Untitled
Abstract: No abstract text available
Text: I = = = = •= Preliminary IBM0418A81QLAA IBM0418A41 QLAA IBM0436A81QLAA IBM0436A41QLAA 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations
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IBM0418A81QLAA
IBM0418A41
IBM0436A81QLAA
IBM0436A41QLAA
256Kx36
512x18)
128Kx36
256Kx18)
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PDF
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Untitled
Abstract: No abstract text available
Text: I = =• = Preliminary IBM0418A80QLAB IBM0418A40QLAB IBM0436A80QLAB IBM0436A40QLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 Organizations • Registered Addresses, W rite Enables, Synchro nous Select, and Data Ins.
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IBM0418A80QLAB
IBM0418A40QLAB
IBM0436A80QLAB
IBM0436A40QLAB
256Kx36
512x18)
128Kx36
256Kx18)
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PDF
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1DT7
Abstract: 72125
Text: INTEGRATED 3ÔE D • 4ÛSS771 ÜQDhBQS 3 ■ IDT _ T - H f e - S S - DEVICE CMOS PARALLEL-TO-SERIAL FIFO IDT721Q5 IDT72115 IDT72125 256 x16, 512x16,1024x 16 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • •
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SS771
512x16
1024x
IDT721Q5
IDT72115
IDT72125
50MHz
28-pin
28pin
32-pin
1DT7
72125
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VRAM
Abstract: Dual-Port V-RAM sam plus SDQ14 sdc1 flash MT42C256
Text: ADVANCE M T42C 256K 16C 1 2 56K x 16 V R A M |U |IC R O N 256K x 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply
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512-cycle
512x16
64-Pin
MT42C256K16C1
VRAM
Dual-Port V-RAM
sam plus
SDQ14
sdc1 flash
MT42C256
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ERF 2030
Abstract: ERF 2030 mos fet c455 CY7C455 CY7C456 CY7C457 CY7C447 c4556 C4557
Text: / u h *f o . iviu i l u a y , w w i u u t i r p , 1 Revision: Tuesday, December 14,1993 C Y 7C 455 C Y 7C 456 C Y 7C 457 = = ^ C Y PR K SS p r e l im in a r y 512x18, lK x 18, and 2 K x l8 Cascadable Clocked FIFOs with Programmable Flags Features Functional Description
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CY7C455
CY7C456
CY7C457
CY7C455)
CY7C456)
CY7C457)
70-MHz
50-MHz
13H2T
ERF 2030
ERF 2030 mos fet
c455
CY7C457
CY7C447
c4556
C4557
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Untitled
Abstract: No abstract text available
Text: I = = = = •= P relim inary IBM0418A81 DLAB IBM0418A41 DLAB IBM0436A81DLAB IBM0436A41 DLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations
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IBM0418A81
IBM0418A41
IBM0436A81DLAB
IBM0436A41
256Kx36
512x18)
128Kx36
256Kx18)
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"Video RAM"
Abstract: Video RAM SIO11 AK5216256WV-10 AK5216256WV-12 AK5216256WV-80 512X16 si08 VIDEO module
Text: ACCUTEK MICROCIR CU IT 3TE D • 01D7ti47 GODDOS"] 3 ■ ACU T-46-23-20 ACCUTEK MICROCIRCUIT AK5216256WV 256Kx 16/512x16 Dual Port Video RAM DESCRIPTION The Accutek AK5216256 is a 4 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 256K x 16 DRAM
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AK5216256WV
256Kx
16/512x16
AK5216256
33MHz.
256Kx16bit
512x16
AK521625125Â
AK5216128WV-10
"Video RAM"
Video RAM
SIO11
AK5216256WV-10
AK5216256WV-12
AK5216256WV-80
si08
VIDEO module
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Untitled
Abstract: No abstract text available
Text: MOSEL M S 7 2 1 05/ 72115 256x16 & 512x16 Parallel-to-Serial FIFOs PRELIMINARY DESCRIPTION FEATURES 25ns parallel port access time 50MHz serial output port shift rate Easily expandable in both word width and depth Asynchronous and simultaneous read/write operation
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256x16
512x16
50MHz
28-pin
300mil
330mil
MS72105
S72115
16-bit
MS72115
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Untitled
Abstract: No abstract text available
Text: SN74ACT7803 512x18 CLOCKED FIRST-IN, FIRST-OUT MEMORY S C A S 1 9 1 A -M A R C H 1991 - R EVISED JULY 1995 • Member of the Texas Instruments Wldebus Family • Free-Running Read and Write Clocks Can Be Asynchronous or Coincident • Read and Write Operations Synchronized
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SN74ACT7803
512x18
50-pF
SN74ACT78.
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PDF
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DDXXXXX
Abstract: No abstract text available
Text: PRELIMINARY IDT72V205 IDT72V215 IDT72V225 IDT72V235 IDT72V245 3.3 VOLT CMOS SyncFlFO 256x18, 512x18,1,024x18, 2,048 X 18 and 4,096 x 18 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • 72225LB/72235LB/72245LB, designed to run off a 3.3V sup
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IDT72V205
IDT72V215
IDT72V225
IDT72V235
IDT72V245
256x18,
512x18
024x18,
72225LB/72235LB/72245LB,
18-bit
DDXXXXX
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS SyncBiFlFO 256x18x2 and 512x18x2 IDT72605 IDT72615 Integrated Device Technology, Inc. FEATURES: • Two independent FIFO memories for fully bidirectional data transfers • 256 x 18 x 2 organization IDT 72605 • 5 1 2 x 1 8 x 2 organization (IDT 72615)
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256x18x2
512x18x2
IDT72605
IDT72615
IDT72605/IDT72615
68-pin
64-pin
02G271
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74ABT7819 512x18x2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY SCBS125G - JULY 1992 - REVISED JULY 1998 • Member of the Texas Instruments Widebus Family • Microprocessor Interface Control Logic • Programmable Almost-Full/Almost-Empty Flag •
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SN74ABT7819
512x18x2
SCBS125G
50-pF
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PDF
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Untitled
Abstract: No abstract text available
Text: MI CR ON T E C H N O L O G Y bOE D INC 000^^23 AMT • PIRN ADVANCE MT42C256K16C2 256K X 16 VRAM I^ IK Z R O N VRAM 256K X 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, timing and functions • High-performance, CMOS silicon-gate process
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MT42C256K16C2
512x16
512-cycle
MT42C256K16C2
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PDF
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Untitled
Abstract: No abstract text available
Text: = = = = = •= Preliminary IBM 0418A81 E LAB IBM0418A41 ELAB IBM0436A81E LAB IBM0436A41ELAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations
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0418A81
IBM0418A41
IBM0436A81E
IBM0436A41ELAB
256Kx36
512x18)
128Kx36
256Kx18)
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