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    512X16 Search Results

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    512X16 Price and Stock

    ROHM Semiconductor BR93A76RFJ-WME2

    EEPROM LOW NOISE OPER AMPLIFIER
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    TTI BR93A76RFJ-WME2 Reel 2,500
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    ROHM Semiconductor BR93G76FJ-3AGTE2

    EEPROM SERIAL EEPROM
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    TTI BR93G76FJ-3AGTE2 Reel 2,500
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    ROHM Semiconductor BR93G76FV-3GTE2

    EEPROM SERIAL EEPROM
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    TTI BR93G76FV-3GTE2 Reel 2,500
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    ROHM Semiconductor BR93G76FJ-3GTE2

    EEPROM SERIAL EEPROM
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    TTI BR93G76FJ-3GTE2 Reel 2,500
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    512X16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    512X16 sram

    Abstract: SRAM timing static SRAM single port
    Text: d110001 512X16, Mux 8, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 512X16 SRAM is a high-performance, synchronous single-port, 512-word by 16-bit memory designed to


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    PDF d110001 512X16, 512X16 512-word 16-bit 61mm2 HS300-SS 99Q3P0 512X16 sram SRAM timing static SRAM single port

    EEPROM MARKING L46

    Abstract: rl46 MARKING L66 EEPROM RL56 eeprom EEPROM MARKING rl56 RL66 EEPROM IC rl46 BR93L56
    Text: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BR93Lxx-W ●General Description BR93Lxx-W is serial EEPROM of serial 3-line interface method ●Features „ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)


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    PDF BR93Lxx-W BR93Lxx-W 16Kbit EEPROM MARKING L46 rl46 MARKING L66 EEPROM RL56 eeprom EEPROM MARKING rl56 RL66 EEPROM IC rl46 BR93L56

    K6F8016R6C

    Abstract: No abstract text available
    Text: K6F8016R6C Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft February 7, 2003 Preliminary 1.0 Finalize July 3, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    PDF K6F8016R6C 58/Typ. 32/Typ.

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6F8016U6C

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM K6F8016U6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark May 1, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    PDF K6F8016U6C 58/Typ. 32/Typ.

    Untitled

    Abstract: No abstract text available
    Text: TMS320C5x, TMS320LC5x DIGITAL SIGNAL PROCESSORS SPRS030A – APRIL 1995 – REVISED APRIL 1996 D D D D D D D D D D D D D D D Powerful 16-Bit TMS320C5x CPU 20-, 25-, 35-, and 50-ns Single-Cycle Instruction Execution Time for 5-V Operation 25-, 40-, and 50-ns Single-Cycle Instruction


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    PDF TMS320C5x, TMS320LC5x SPRS030A 16-Bit TMS320C5x 50-ns

    TMS320LC51

    Abstract: No abstract text available
    Text: TMS320C5x, TMS320LC5x DIGITAL SIGNAL PROCESSORS SPRS030A – APRIL 1995 – REVISED APRIL 1996 D D D D D D D D D D D D D D D Powerful 16-Bit TMS320C5x CPU 20-, 25-, 35-, and 50-ns Single-Cycle Instruction Execution Time for 5-V Operation 25-, 40-, and 50-ns Single-Cycle Instruction


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    PDF TMS320C5x, TMS320LC5x SPRS030A 16-Bit TMS320C5x 50-ns TMS320LC51

    1DT7

    Abstract: 72125
    Text: INTEGRATED 3ÔE D • 4ÛSS771 ÜQDhBQS 3 ■ IDT _ T - H f e - S S - DEVICE CMOS PARALLEL-TO-SERIAL FIFO IDT721Q5 IDT72115 IDT72125 256 x16, 512x16,1024x 16 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • •


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    PDF SS771 512x16 1024x IDT721Q5 IDT72115 IDT72125 50MHz 28-pin 28pin 32-pin 1DT7 72125

    VRAM

    Abstract: Dual-Port V-RAM sam plus SDQ14 sdc1 flash MT42C256
    Text: ADVANCE M T42C 256K 16C 1 2 56K x 16 V R A M |U |IC R O N 256K x 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply


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    PDF 512-cycle 512x16 64-Pin MT42C256K16C1 VRAM Dual-Port V-RAM sam plus SDQ14 sdc1 flash MT42C256

    se 140

    Abstract: No abstract text available
    Text: MOSEL M S 72105 / 72115 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY FEATURES DESCRIPTION • 2 5n s para lle l p ort a ccess tim e The M S 7 21 0 5 and M S 7 21 1 5 are hig h -sp ee d , low pow e r 16-bit p a ra lle l-to -se ria l FIFO s. T h e se FIFO s a re w ell su ited fo r any


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    PDF 256x16 512x16 DO-15 MS72115 MS72105-25NC MS72115-25NC MS72105-25FC MS72115-25FC MS72105-50NC MS72115-50NC se 140

    "Video RAM"

    Abstract: Video RAM SIO11 AK5216256WV-10 AK5216256WV-12 AK5216256WV-80 512X16 si08 VIDEO module
    Text: ACCUTEK MICROCIR CU IT 3TE D • 01D7ti47 GODDOS"] 3 ■ ACU T-46-23-20 ACCUTEK MICROCIRCUIT AK5216256WV 256Kx 16/512x16 Dual Port Video RAM DESCRIPTION The Accutek AK5216256 is a 4 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 256K x 16 DRAM


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    PDF AK5216256WV 256Kx 16/512x16 AK5216256 33MHz. 256Kx16bit 512x16 AK521625125Â AK5216128WV-10 "Video RAM" Video RAM SIO11 AK5216256WV-10 AK5216256WV-12 AK5216256WV-80 si08 VIDEO module

    Untitled

    Abstract: No abstract text available
    Text: MOSEL M S 7 2 1 05/ 72115 256x16 & 512x16 Parallel-to-Serial FIFOs PRELIMINARY DESCRIPTION FEATURES 25ns parallel port access time 50MHz serial output port shift rate Easily expandable in both word width and depth Asynchronous and simultaneous read/write operation


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    PDF 256x16 512x16 50MHz 28-pin 300mil 330mil MS72105 S72115 16-bit MS72115

    Untitled

    Abstract: No abstract text available
    Text: MI CR ON T E C H N O L O G Y bOE D INC 000^^23 AMT • PIRN ADVANCE MT42C256K16C2 256K X 16 VRAM I^ IK Z R O N VRAM 256K X 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, timing and functions • High-performance, CMOS silicon-gate process


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    PDF MT42C256K16C2 512x16 512-cycle MT42C256K16C2

    d17103

    Abstract: 17p104 KT77 RAM16X 7ROM 9706t SKE 1/17 PD17103GS m1b2 ic9162
    Text: MOSjjSÌBHÈè M O S In te g ra te d C ircuit A*PD17103 A1 //PD17103(A1 ) l i , ROM1 K / W h (512X161=7 h) , RAM16X 4 ti 7 h, l/0 < K -M “ • V - f? P = !> < h P - 7 t îo C P U K t ì, / ; l ^ ^ $ Î ) J : i ' 7 ’ P ^ 7 Ï X f t f B Ì f à X ' t o titz, T ^ T 0 ï ^ t ï 1 6 t i y


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    PDF uPD17103 //PD17103 512X161 RAM16X d17103 17p104 KT77 7ROM 9706t SKE 1/17 PD17103GS m1b2 ic9162

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT42C256K16A1 256K X 16 VRAM | ^ IC = R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply


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    PDF MT42C256K16A1 256Kx 512x16 512-cycle 350mW 64-Pin MT42C256K16A1 2C256K16A1

    sk 8060

    Abstract: 8060c 17p107 KT77 CDA MC UM 7107 D17107 17P103 17p104 BR-F SI-F
    Text: M O S m i» lU i& M O S Integrated C ircu it P i 4 t : 7 h - ' » 1 D 7 1 7 , 1 7 1 7 A i <7)\s3- " j - f ' - * 4 0 P 3 > h n - 7 /¿PD17107liROM1 K / W h (512X16t:-y h) , RAM 16X 4 ti' 7 K 1/0*°- h 11 £ t lT ^ - 5 £ -f “ T-f ? □ = !> h P - 7 t ' t o


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    PDF uPD17107 uPD17107A 512X16t 512X16 sk 8060 8060c 17p107 KT77 CDA MC UM 7107 D17107 17P103 17p104 BR-F SI-F

    MT42C256K16A

    Abstract: No abstract text available
    Text: ADVANCE M T42C256K16A1 256K X 16 VRAM | U |IC R O N 256K x 16 DRAM WITH 512x16 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)


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    PDF T42C256K16A1 512-cycle 512x16 64-Pin MT42C256K16A1 MT42C256K16A

    MT42C256K16A

    Abstract: MT42C256
    Text: ADVANCE MT42C256K16A1 256K X 16 VRAM M IC R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM PIN ASSIGNMENT T o d View • In d u s try -s ta n d a rd p in o u t, tim in g a n d fu n ctio n s • H ig h -p e rfo rm a n c e , C M O S silicon-gate p ro cess • Single +5V ±10% p o w e r s u p p ly


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    PDF MT42C256K16A1 512-cycle accMT42C256K16A1 MT42C256K16A MT42C256

    Untitled

    Abstract: No abstract text available
    Text: MI CR ON T E C H N O L O G Y INC bDE D bl l l S H T D O D b TE l T77 • MRN ADVANCE MT42C256K16C1 256K X 16 VRAM VRAM 256K X 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • In d u stry -sta n d a rd p in o u t, tim in g an d fu n ctio n s • H ig h -p erfo rm an ce, C M O S silico n -g a te p ro cess


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    PDF MT42C256K16C1 512x16 12-cy

    Multiport Video RAM 256k x 16

    Abstract: vram dual port SDQ14
    Text: ADVANCE M MT42C256K16A1 2 5 6 K x 16 V R A M IC R O N VRAM 256K x 16 DRAM WITH 512x16 SAM FEATURES • • • • 64-Pin SOP Vcc TR Vss SDQQ DQO SDQ1 DQ1 Vcc SDQ2 002 SOQ3 Vss SOQ4 004 S0Q5 005 Vcc SDQ6 0Q6 SDQ7 007 Vm WEL WEU RAS A8 A7 A6 A5 A4 Voc JEDEC Standard Mandatory Function set plus


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    PDF MT42C256K16A1 512-cycle 350mW 512x16 64-Pin Multiport Video RAM 256k x 16 vram dual port SDQ14

    aef 1000

    Abstract: MS72105-25FC MS72105-25NC MS7211 P28-2 64256
    Text: MOSEL MS72105/72115 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY DESCRIPTION FEATURES 25ns parallel port access time 50MHz serial output port shift rate Easily expandable in both word width and depth Asynchronous and simultaneous read/write operation


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    PDF MS72105/72115 256x16 512x16 50MHz 28-pin 300mil 330mil MS72105 MS72115 16-bit aef 1000 MS72105-25FC MS72105-25NC MS7211 P28-2 64256

    Untitled

    Abstract: No abstract text available
    Text: MOSEL ^ M S 7 2 1 0 5 /7 2 1 1 5 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY FEATURES DESCRIPTION • 25ns parallel port access time The MS72105 and M S 72115 are high-speed, low power 16-bit parallel-to-serial FIFOs. These FIFOs are well suited for any


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    PDF 50MHz 28-pin 300mil 330mil 256x16 512x16 MS72105 16-bit QD-15 MS72115

    SDQ11

    Abstract: vram dual port 256K X 16 MULTIPORT VIDEO RAM
    Text: ADVANCE MT42C256K16A1 256K x 16 VRAM b l l l S M I D 0 D S 33 7 TS1 URN M IC R O N SSE D MICRON T E C H N O L O G Y INC VRAM 256Kx 16 DRAM WITH 512x16 SAM - 7 - 0 FEATURES Industry standard pinout, timing, and functions


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    PDF MT42C256K16A1 512-cycle 350mW 256Kx 512x16 T--46--23--20 SDQ11 vram dual port 256K X 16 MULTIPORT VIDEO RAM

    E5771

    Abstract: IDT72105 IDT72115 IDT72125 P28-2
    Text: INTEGRATED DEVICE 47E D Bi MÖ2S771 DOO'iMTl fl BlI DT IDT72105 IDT72115 IDT72125 CMOS PARALLEL-TO-SERIAL FIFO 256x16, 512x16,1024x16 T - * f é - 3 ; r Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • T h e ID T7210 5 /7 2 1 1 5 /7 2 1 25 s are very high speed, low


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    PDF 256x16, 512x16 1024x16 IDT72105 IDT72115 IDT72125 45MHz 28-pin 32-pin E5771 IDT72125 P28-2