Untitled
Abstract: No abstract text available
Text: 57C4501-50/65/80 a High Density First-in First-out FIFO 512x9 CMOS Memory Ol Advance Information •*1 DISTINCTIVE CHARACTERISTICS RAM based FIFO 512x9 organization Cycle times of 65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum
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57C4501-50/65/80
512x9
57C4501
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Untitled
Abstract: No abstract text available
Text: ADV MICRO I MEMORY IME D • 025752Ö 0020233 57C4501-50/65/80 High Density First-in First-out FIFO 512x9 CMOS Memory <i a Advance Information ui o DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable In both width and_depth Increased noise immunity for XI - CMOS
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57C4501-50/65/80
512x9
57C4501
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DIP 16 DRAWING Advanced Micro Devices
Abstract: 57401j mmi SINGLE SHIP ORGAN INCOMING RAW MATERIAL INSPECTION checklist Defense 5962-85155 MMI PAL14L8 38510 Cross Reference
Text: M ilitary S p ecialty M em ory Whatever your military data buffering needs, Advanced Micro Devices has the right specialty memory device to fit your applica tion. All of our military bipolar and CMOS First-in First-out FIFO memories are fully screened to MIL-STD-883.
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MIL-STD-883.
7401A
7402A.
20-Lead
24-Lead
20-Terminal
28-Terminal
DIP 16 DRAWING Advanced Micro Devices
57401j mmi
SINGLE SHIP ORGAN
INCOMING RAW MATERIAL INSPECTION checklist
Defense 5962-85155
MMI PAL14L8
38510 Cross Reference
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wf vqc 10d
Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
Text: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction
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06566C
06972D
06705D
wf vqc 10d
TGS 2201
SMD W2T
TRANSISTOR SMD W2T 72
EX5962
MMI PAL14L8
C57401j
tms 6011
MIMI Ti PROM programming procedure
w2t smd
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Monolithic Memories
Abstract: No abstract text available
Text: Deep First-In First-Out FIFO Buffer Memory (7 V O rdering Inform ation F ea tu res / B enefits • Fun c tio n a lly a n d p in c o m p a tib le with Mostek MK4501 FIFO C * CMOS RAM-based architecture Expandable to any word depth and word width Asynchronous operation
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MK4501
67C4500
256-word
67C4501
512-word
67C4502
April88
Monolithic Memories
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