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    R5F21255SDFP#X6 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion) Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation R5F523E5SDFL-10

    IC MCU 32BIT 128MB FLASH 48LQFP
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    Renesas Electronics Corporation R5F523E5SDFL-30

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    Amphenol LTW Technology ROP-5SDFFH-TSU7001

    RJ45 ODVA DOUBLE LOCK
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    Amphenol LTW Technology ROP-5SDFFH-TSM7001

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    5SDF Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5SDF01R2501 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF01R2502 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF01R2503 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF01R2504 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF02D6002 ABB Semiconductors Diode, 250A, 6000V, Fast Recovery Diode Original PDF
    5SDF02D6002 ABB Semiconductors Fast Recovery Diode Original PDF
    5SDF02D6004 ABB Semiconductors Diode, 180A, 5500V, Fast Recovery Diode Original PDF
    5SDF02D6004 ABB Semiconductors Fast Recovery Diode Original PDF
    5SDF03D4501 ABB Semiconductors Fast Recovery Diode Original PDF
    5SDF03D4501 ABB Semiconductors Diode, 320A, 4500V, Fast Recovery Diode Original PDF
    5SDF03D4502 ABB Semiconductors Fast Recovery Diode Original PDF
    5SDF03D4502 ABB Semiconductors Diode, 255A, 4500V, Fast Recovery Diode Original PDF
    5SDF04D4500 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF04F6004 ABB Semiconductors Diode, 360A, 5500V, Fast Recovery Diode Original PDF
    5SDF04F6004 ABB Semiconductors Fast Recovery Diode Original PDF
    5SDF05D1800 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF05D2200 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF05D2500 ABB Semiconductors Fast Recovery Diodes Scan PDF
    5SDF05D2501 ABB Semiconductors Fast Recovery Diode Original PDF
    5SDF05D2501 ABB Semiconductors Diode, 490A, 2500V, Fast Recovery Diode Original PDF

    5SDF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode fr 307

    Abstract: 5SDF0131Z0400 ABB 12 30 01 ABB 14 11 09 DC-20000
    Text: PRELIMINARY 5SDF 0131Z0400 5SDF 0131Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters


    Original
    PDF 0131Z0400 1768/138a, DS/307/12b Jun-12 Jun-12 diode fr 307 5SDF0131Z0400 ABB 12 30 01 ABB 14 11 09 DC-20000

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 585 18 4.5 1.3 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating


    Original
    PDF 08H6005 5SYA1116-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 435 16 2.42 2.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05F4502 Doc. No. 5SYA1151-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating


    Original
    PDF 05F4502 5SYA1151-01 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link


    Original
    PDF 14H4505 5SYA1110-02 CH-5600

    11f250

    Abstract: 11f25 22106
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 950 21 1.2 0.38 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 11F2501 Doc. No. 5SYA1113-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters


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    PDF 11F2501 5SYA1113-04 CH-5600 11f250 11f25 22106

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 810 24 2.42 1.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating


    Original
    PDF 10H4502 5SYA1115-03 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2505 Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters


    Original
    PDF 05D2505 5SYA1114-03 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500


    Original
    PDF 04D4504 04D4504 04D4004 1768/138a, DM/219/06 Jul-10

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 06T3004 5SDF 06T3004 Old part no. DM 827C-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original
    PDF 06T3004 827C-620-30 06T3004 06T2504 1768/138a, DM/276/08 Jul-10

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 5SDF 0131Z0400 5SDF 0131Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters


    Original
    PDF 0131Z0400 1768/138a, DS/307/12b Jun-12 Jun-12

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT


    Original
    PDF 04D4504 1768/138a, DM/219/06a Aug-11 04D4504A Aug-11

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 5SDF 90Z0400 5SDF 90Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters


    Original
    PDF 90Z0400 1768/138a, DS/305/12b Jun-12 Jun-12

    COSMIC

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 920 IFRMS = 1440 IFSM = 25 VF0 = 1.6 rF = 1.1 VDClink = 2800 Fast Recovery Diode for GCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115- 01 July 98 Features • Patented free-floating silicon technology


    Original
    PDF 10H4502 CH-5600 COSMIC

    5SDF11F2501

    Abstract: S2200
    Text: Key Parameters VRRM = 2500 IFAVM = 950 IFRMS = 1500 IFSM = 21 VF0 = 1.20 rF = 0.38 VDClink = 1500 V A A kA V mΩ V Fast Recovery Diode 5SDF 11F2501 Doc. No. 5SYA 1113-04 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses


    Original
    PDF 11F2501 CH-5600 5SDF11F2501 S2200

    A140

    Abstract: B140 C140 VF140 VF25
    Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ Ω V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 Nov. 03 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating


    Original
    PDF 10H4520 5SYA1170-00 CH-5600 A140 B140 C140 VF140 VF25

    5SDF11F2501

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 950 21 1.2 0.38 1500 V A kA V Fast Recovery Diode 5SDF 11F2501 mΩ V Doc. No. 5SYA 1113-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters


    Original
    PDF 11F2501 CH-5600 5SDF11F2501

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5 1.4 0.52 1100 V A kA V Fast Recovery Diode 5SDF 05D2501 mΩ V Doc. No. 5SYA 1112-03 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as snubber diode in GTO converters


    Original
    PDF 05D2501 CH-5600

    RCD snubber

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 900 16 1.8 0.9 2400 V A kA V Fast Recovery Diode 5SDF 07H4501 mΩ V Doc. No. 5SYA 1111-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized for use as large-area snubber diode in GTO converters


    Original
    PDF 07H4501 CH-5600 RCD snubber

    Untitled

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link


    Original
    PDF 14H4505 CH-5600

    5SDF 90Z0401

    Abstract: No abstract text available
    Text: PRELIMINARY 5SDF 90Z0401 5SDF 90Z0401 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters


    Original
    PDF 90Z0401 1768/138a, DS/325/14 Jan-14 5SDF 90Z0401

    Untitled

    Abstract: No abstract text available
    Text: 5SDF01R2503 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current110 V(RRM)(V) Rep.Pk.Rev. Voltage2.5k t(rr) Max.(s) Rev.Rec. Time2.8 @I(F) (A) (Test Condition) @I(R) (A) (Test Condition)140 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)


    Original
    PDF 5SDF01R2503 Current110 StyleStF-M12

    A140

    Abstract: B140 C140 VF140 VF25 5SDF kn 18
    Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 March 05 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating


    Original
    PDF 10H4520 5SYA1170-00 CH-5600 A140 B140 C140 VF140 VF25 5SDF kn 18

    5SDF28L4520

    Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2750 40x103 1.35 0.38 2800 V A A V m V Fast Recovery Diode 5SDF 28L4520 Preliminary Doc. No. 5SYA1185-01 Dec. 11 • Industry standard housing  Cosmic radiation withstand rating  Optimized low on-state


    Original
    PDF 28L4520 5SYA1185-01 CH-5600 5SDF28L4520 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520

    5SDF06D2504

    Abstract: abb 800
    Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original
    PDF 06D2504 1768/138a, DM/267/08a Aug-11 06D250A Aug-11 5SDF06D2504 abb 800