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    5SGR 30L4502 Search Results

    5SGR 30L4502 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5SGR 30L4502 ABB Semiconductors Thyristor, GTO, 4500V Forward Blocking Voltage, 850A On-State Current, 100A Holding Current, 2200A RMS Current Original PDF
    5SGR30L4502 ABB Semiconductors Gate turn-off Thyristor Original PDF

    5SGR 30L4502 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GTO thyristor ABB

    Abstract: reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 1.90 0.70 2800 V A kA V mΩ V Reverse Conducting Gate turn-off Thyristor 5SGR 30L4502 Doc. No. 5SYA 1216-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses


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    30L4502 30L4502 CH-5600 GTO thyristor ABB reverse-conducting thyristor GTO ABB gto peak reverse voltage test abb GTO thyristor RC snubber dv/dt diode gto 5SGR 30L4502 gto switching test abb ABB GTO ABB thyristor 5 PDF

    ABB EA 200

    Abstract: reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR
    Text: Key Parameters Vdrm = 4500 V Itgqm = 3000 A Itsm = II o1 > ^DClink 5SGR 30L4502 24 kA 1.9 V = 0.7 m i 2800 V rT Reverse Conducting Gate turn-off Thyristor Doc. No. 5SYA 1216-02 Feb.97 Features The 5SGR 30L4502 is a 91 mm buffered layer, reverse-conducting GTO offering low lGT as


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    30L4502 30L4502 CH-5600 ABB EA 200 reverse-conducting thyristor 5SGR30L4502 12.000 7J abb S count GTO 5SGR PDF

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


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    01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031 PDF

    05D2500

    Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt­ G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.


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    15F2502 5D25DQ 01R2501 01R2501 20H2501 05D2500 11F2500 01R25D1 25H25C1 GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV PDF