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MACOM CMPA0060025F1 RF Amplifier Amplifier, MMIC,HPA,25W,DC-6.0GHz,GaN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA0060025F1		92			1 $1062.59 10 $1062.59 100 $1062.59 1000 $1062.59 10000 $1062.59	Buy Now
MACOM CMPA0060025F RF Amplifier GaN MMIC Power Amp 0.02-6.0GHz, 25 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA0060025F		10			1 $968.12 10 $968.12 100 $968.12 1000 $968.12 10000 $968.12	Buy Now
MACOM CMPA2560025F RF Amplifier GaN MMIC Power Amp 2.5-6.0GHz, 25 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CMPA2560025F					1 $921.29 10 $921.29 100 $921.29 1000 $921.29 10000 $921.29	Get Quote
OMRON Corporation F3SG-4SRA0600-25-F Safety Light Curtains GLC, Advanced, Hand Safe
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	F3SG-4SRA0600-25-F					1 $1868.38 10 $1868.38 100 $1868.38 1000 $1868.38 10000 $1868.38	Get Quote
OMRON Corporation F3SG-4SRB0600-25-F Safety Light Curtains GLC, Basic, Hand Safe
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	F3SG-4SRB0600-25-F					1 $1659.34 10 $1659.34 100 $1659.34 1000 $1659.34 10000 $1659.34	Get Quote

60025F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CMPA0060025F Abstract: CMPA0060025F-TB CMPA2560002F JESD22 Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F CMPA0060025F-TB CMPA2560002F JESD22	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T	PDF
Untitled Abstract: No abstract text available Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F	PDF
CMPA2560025F Abstract: 920pF Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F CMPA25 60025F 920pF	PDF
Untitled Abstract: No abstract text available Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F CMPA25 6002ree	PDF
CMPA2560025F Abstract: CMPA2560025F-TB Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB	PDF
CMPA2560025F Abstract: CMPA2560025F-TB JESD22 A114D Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F CMPA25 60025F CMPA2560025F-TB JESD22 A114D	PDF
Untitled Abstract: No abstract text available Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F CMPA25 60025F	PDF
TBTH06M20 Abstract: CMPA0060025F Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20	PDF
CMPA0060025F Abstract: RF-35-0100-CH CMPA0060025F-TB Text: 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB	PDF
CMPA2560025F Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408 Text: PRELIMINARY 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408	PDF
cree Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20 Text: PRELIMINARY 60025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F cree Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20	PDF
CMPA2560025F Abstract: CMPA2560025F-TB c08bl242x Text: 60025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s 60025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA2560025F CMPA2560025F CMPA25 60025Fs CMPA2560025F-TB c08bl242x	PDF