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    Fix Supply BULK-RS-H60MIL-2

    Military Grade MIL-R-3065D F2 Bu
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    Fix Supply BULK-RS-H60MIL-8

    Military Grade MIL-R-3065E Buna-
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    Fix Supply BULK-RS-N60MIL-8

    Military Grade MIL-R-3065E Neopr
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    Fix Supply BULK-RS-H60MIL-3

    Military Grade MIL-R-3065D F2 Bu
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    Fix Supply BULK-RS-E60MIL-3

    Military Grade MIL-R-3065E EPDM
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    DigiKey BULK-RS-E60MIL-3 Bulk 1
    • 1 $1214.22
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    60MIL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS Mechanical Contact Normal Force: 50gf min. Durability: 300 Cycles Contact Retention Force: 0.45kg min. Docking Connector EI Series SMT Type, 2.0mm [.079"] Pitch 44 PIN. Electrical Current Rating: 1.0A, 30℃ Rise above Ambient Contact Resistance: 60MILLIOHMS MAX.


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    PDF 60MILLIOHMS

    resistor 90k

    Abstract: No abstract text available
    Text: FEATURES The T1206 resistor chips on Ceramic are designed for surface-mount applications. These chips are manufactured using state-of-the-art thin-film techniques, are 100% electrically tested and visually inspected to MIL-STD-883. • Small chip size 120mil x 60mil


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    PDF T1206 MIL-STD-883. 120mil 60mil MIL-R-55342/07 MIL-STD-202, 50ppm T120632500 resistor 90k

    Untitled

    Abstract: No abstract text available
    Text: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7


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    PDF AH420 AH420 1-800-WJ1-4401

    AH420-EPCB900

    Abstract: AH420-EPCB2140
    Text: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2400 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with up to -45 dBc ACLR and


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    PDF AH420 AH420 1-800-WJ1-4401 AH420-EPCB900 AH420-EPCB2140

    T25C

    Abstract: No abstract text available
    Text: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7


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    PDF AH420 AH420 1-800-WJ1-4401 T25C

    V18MLN41206L

    Abstract: V9MLN41206 V14MLN41206 V18MLN41206 5MLN41206
    Text: Varistor Products Surface Mount Multilayer Varistors MLVs > MLN Series RoHS MLN SurgeArray Suppressor Description SurgeArray™ devices are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage


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    PDF 18VDC. V18MLN41206L V9MLN41206 V14MLN41206 V18MLN41206 5MLN41206

    Untitled

    Abstract: No abstract text available
    Text: MA02203AD 3.6V 450mW RF Power Amplifier IC for DECT Applications Features DECT PCS Personal Wireless Telephony PWT Cordless PBX Radio/Wireless Local Loop (RLL/WLL) N/C N/C +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C •= •= •= •= •=


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    PDF MA02203AD 450mW

    ITT333105BD

    Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
    Text: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation


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    PDF ITT333105BD ITT333105BD 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S

    1008CS

    Abstract: C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S
    Text: 4.6V 1.2W RF Power Amplifier IC for AMPS ITT333106BD Applications Features AMPS Cellular Telephones Cellular Digital Packet Data CDPD +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG • • • • • • • Class AB Bias 750 to 900 MHz Operation


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    PDF ITT333106BD 1008CS C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S

    V14MLN41206

    Abstract: V18MLN41206 V18MLN41206L V9MLN41206 EIA3216 chip varistor
    Text: Varistor Products Surface Mount Multilayer Varistors MLVs > MLN Series MLN SurgeArray Suppressor RoHS Description SurgeArray™ devices are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage


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    PDF 18VDC. EIA-481-1, V14MLN41206 V18MLN41206 V18MLN41206L V9MLN41206 EIA3216 chip varistor

    RF2173

    Abstract: RF2119 AD 928
    Text: RF2119 2 HIGH EFFICIENCY 2V POWER AMPLIFIER Typical Applications • Two-Way Pagers • 3V AMPS/ETACS Cellular Handsets • 915MHz ISM Band Equipment • CDPD Portable Data Cards • Spread-Spectrum Systems • Personal Digital Cellular -A- 3.90 ± 0.10 SiGe HBT


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    PDF RF2119 915MHz PSSOP-16 RF2173 RF2119 AD 928

    power diodes with V-I characteristics

    Abstract: V9MLA0402 V9MLA0402L V9MLA0603 V9MLA0805L 0402-size v120mla1210
    Text: ML Series Data Sheet Multilayer Surface Mount Transient Voltage Surge Suppressors The ML Series is a family of Transient Voltage Surge Suppression devices based on the Littelfuse Multilayer fabrication technology. These components are designed to suppress a variety of transient events,


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    PDF ISO9000 power diodes with V-I characteristics V9MLA0402 V9MLA0402L V9MLA0603 V9MLA0805L 0402-size v120mla1210

    V14MLN41206

    Abstract: V18MLN41206 V18MLN41206L V9MLN41206
    Text: Varistor Products Surface Mount Multilayer Varistors MLVs > MLN Series MLN SurgeArray Suppressor RoHS Description SurgeArray™ devices are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage


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    PDF 18VDC. EIA-481-1, V14MLN41206 V18MLN41206 V18MLN41206L V9MLN41206

    gsm signal amplifier circuit diagram

    Abstract: abstract for wireless communication system gsm with pic 48vdc schematic diagram TRF7003 Architecture of TMS320C54X with diagram trf8xxx AUDIO MOSFET POWER AMPLIFIER SCHEMATIC schematic diagram TRF8011 AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
    Text: Evaluation Board Documentation TRF8011 and 2 X TRF7003 RF Power Amplifier 4.8 Volts GSM Application APPLICATION BRIEF: SWRA013 Wireless Communication Business Unit Digital Signal Processing Solutions March 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any


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    PDF TRF8011 TRF7003 SWRA013 TRF7003 gsm signal amplifier circuit diagram abstract for wireless communication system gsm with pic 48vdc schematic diagram Architecture of TMS320C54X with diagram trf8xxx AUDIO MOSFET POWER AMPLIFIER SCHEMATIC schematic diagram AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

    1008CS

    Abstract: 1008CT M513 MA02203AD MAAM-007219 MAAM-007219-000000 MAAM-007219-TR3000 SOIC-16
    Text: RoHS Compliant 3.6 V, 450 mW DECT RF Power Amplifier IC 1880 - 1900 MHz Features • • • • • • • • • • • MAAM-007219 V1 Functional Schematic Ideal for DECT Applications Output Power: +26.5 dBm Power Gain: 24.5 dB Single Positive Supply


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    PDF MAAM-007219 SOIC-16 MA02203AD MAAM-007219 SOIC-16 1008CS 1008CT M513 MA02203AD MAAM-007219-000000 MAAM-007219-TR3000

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


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    PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    Untitled

    Abstract: No abstract text available
    Text: TaN The T1206 resistor chips on Ceramic are designed for surface-mount applications. These chips are manufactured using state-of-the-art thin-film techniques, are 100% electrically tested and visually inspected to MIL-STD-883. Small chip size 120mil x 60mil


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    PDF T1206 MIL-STD-883. 120mil 60mil R-55342/07 MIL-STD-202, 50ppm T1206-

    TO111 package

    Abstract: TO61 package TO63 package MOSFET F24 S06 rectifier
    Text: PACKAGE OUTLINE DRAWINGS TO-18 PACKAGE TO-5 PACKAGE —seâtaao h i m TO-33 PACKAGE 0Ct9 t?s 1 tf— II i-t 4'fiC> ?y H TO-72 PACKAGE TO-3 PACKAGE MODIFIED TO-3 PACKAGE 60mil pins SE* Ft t -L SEATU 'i "01I6 02' °’6 .225 205 JO -66 PACKAGE F-24 PACKAGE


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    PDF 60mil O-111 LCC-28 nms-11 TO111 package TO61 package TO63 package MOSFET F24 S06 rectifier

    Untitled

    Abstract: No abstract text available
    Text: ITI I N E TO-3 PACKAGE 1=7 1 TO-5 PACKAGE TO-39 is TO-5 with 0.50 Min leads 305 370 . >3 M*» MOOfFMED TO-3 PACKAGE (60mil pins) D R A W IN G S U 1 009 125 S E A T IN G P L A N E _ I \ . 450 250 “T I SO M IN 1s a M A X IV ^ B O T H ENDS 03 4 n?a 'V Collector is connected to case.


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    PDF 60mil O-254 MO-078

    SDT96309

    Abstract: sdt96
    Text: -j/otttron_^ Eom gir ©at&ìl©© S W IT C H T R O N P O W E R T R A N S IS T O R S Devices. Inc DEVICE POLARITY TYPE v C EO su s 'C ( P .i k ) hpj; & 'c VC E (sat) ifM H j PT (W ) V O LTS AM PS MIN/MAX AM PS M AX. A M PS MIN. MAX 30


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    PDF 2N6546* 2N6547* 2N6560 2N6561 SDT02353 SDT02354 SDT02355 SDT12301 SDT12302 SDT12303 SDT96309 sdt96

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


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    PDF 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B

    UGN 3140 sensor

    Abstract: 3140u UGN-3140U 3140u hall effect switches UGN3140U UGS3140U UGS-3140U UGN 3140u sensor UGN-3140T 50G HALL SENSOR
    Text: I UGN-3140T/U AND UGS-3140T/U SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES U G N -3140T/U A N D U GS-3140T/U U LTR A -SEN SITIV E H A LL EFFECT SW ITCHES FEATURES • • • • • • FUNCTIONAL BLOCK DIAGRAM 4.5 V to 24V Operation High Reliability— No Moving Parts


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    PDF UGN-3140T/U UGS-3140T/U UGS-3140T/U UGN 3140 sensor 3140u UGN-3140U 3140u hall effect switches UGN3140U UGS3140U UGS-3140U UGN 3140u sensor UGN-3140T 50G HALL SENSOR

    50g k hall

    Abstract: 50G HALL Sensor UGN3119U Hall Effect 3 pin ugn A12062 UGN-3119U UGS-3119U Sprague Hall Effect hall current sensor 3A UGN-3119T
    Text: OSPROGUE_ _ _ _ _ _ _ _ _ _ T H E M A RK OF RELIABILITY U G N -3119T U G N -3 119U UGS-3119T DATA SHEET 27621 HALL EFFECT SWITCHES FEATURES • • • • • • 4 .5 V to 24V Operation High Reliability— No Moving Parts Constant Output Amplitude Output Compatible with All Digital Logic Fam ilies


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    PDF UGN-3119T UGN-3119U UGS-3119T 50g k hall 50G HALL Sensor UGN3119U Hall Effect 3 pin ugn A12062 UGN-3119U UGS-3119U Sprague Hall Effect hall current sensor 3A UGN-3119T

    MO-127

    Abstract: header pin dimensions MO127
    Text: r .27 [6.8] j- . 0 9 3 i. 0 0 3 I III" [2.36Ì0.08] T £ 7 .0021 -A- .475±.025 [12.07±0.64] _ L 0.O6OÌ.OO2 [1.52±0.05] TYP. —• 1.61 0.1 56 + .002 [03.96+0.05] 2 PLACES [40.9] .32 [8.1] 0.10 [02 B B R.175 [R4.45] TYP. 1.200 30.48] 1.63 .815 [20.70]


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    PDF MO-127 60-MIL header pin dimensions MO127