TLG145K
Abstract: TLR145K TLR144K TLR143 TLR143K toshiba suffix TLR146K TLG147K TLR146 TLG143K
Text: TOSHIBA TLG14D K,TLR14D K TOSHIBA LED LAMP TLG143K, TLG144K, TLG145K, TLG147K, TLR140K TLR143K, TLR144K, TLR145K, TLR146K, TLR147K LED LAMP WITH BRACKET MAXIM UM RATINGS Ta= 25°C CHARACTERISTIC Forward Current RED GREEN Reverse Voltage RED Power Dissipation
|
OCR Scan
|
TLG14D
TLR14D
TLG143K,
TLG144K,
TLG145K,
TLG147K,
TLR140K
TLR143K,
TLR144K,
TLR145K,
TLG145K
TLR145K
TLR144K
TLR143
TLR143K
toshiba suffix
TLR146K
TLG147K
TLR146
TLG143K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TLRH247 TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR InGaAiP RED LIGHT EMISSION TLRH247 Unit in mm InGaAfP RED LED Elliptical Lens : Colorless Clear Lens Wide Radiation Low Drive Current, High Intensity Red Light Emission Plastic Molded Colorless Clear Lens Provides for High Contrast
|
OCR Scan
|
TLRH247
|
PDF
|
TLG373
Abstract: TLR372 mcd 5x7 led display TLG-373 TLR-372 TLR373 TL-R led TOSHIBA TLG-372 tlg372
Text: TOSHIBA TLG372,TLG373,TLR372,TLR373 TOSHIBA LED DISPLAY TLG372, TLG373, TLR372, TLR373 5X7 DOT MATRIX LED DISPLAY • • • • • 6.0mm 0.24” Character Height. X-Y m atrix connection. (Multiplex drive) 36 light em itting diodes including decimal point.
|
OCR Scan
|
TLG372
TLG373
TLR372
TLR373
TLG372,
TLG373,
TLR372,
mcd 5x7 led display
TLG-373
TLR-372
TLR373
TL-R led TOSHIBA
TLG-372
|
PDF
|
05NU42
Abstract: No abstract text available
Text: TOSHIBA 05NU42 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 05NU42 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = io o o v m .
|
OCR Scan
|
05NU42
100ns
961001EAA2'
|
PDF
|
100L
Abstract: 2SC4250 5962A
Text: TO SHIBA 2SC4250 TOSHIBA TRANSISTOR TV VHF MIXER APPLICATIONS. SILICON NPN EPITAXIAL PLANAR TYPE 2SC4250 U nit in mm 2.1 ±0.1 • High Conversion Gain : Gce = 25dB Typ. • Low Reverse Transfer Capacitance : Cre = 0.45pF (Typ.) MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2SC4250
SC-70
200MHz
260MHz
50MHz
50MHz
100L
2SC4250
5962A
|
PDF
|
MG25Q1BS11
Abstract: No abstract text available
Text: MG25Q1BS11 TOSHIBA MG25Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O^s Max. Low Saturation Voltage : V£E(sat) = 2.7V (Max.) Enhancement-Mode
|
OCR Scan
|
MG25Q1BS11
2-33D1A
MG25Q1BS11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2845 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2845 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance
|
OCR Scan
|
2SK2845
20kf2)
|
PDF
|
transistor toshiba marking hf
Abstract: 2SA1162 2SC2712
Text: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)
|
OCR Scan
|
2SC2712
150mA
2SA1162
270Hz
transistor toshiba marking hf
2SA1162
2SC2712
|
PDF
|
MG15Q6ES42
Abstract: MG15Q 15Q6ES42
Text: TOSHIBA MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage
|
OCR Scan
|
MG15Q6ES42
15Q6ES42
12-fast-on-tab
2-93A3A
961001EAA2
MG15Q6ES42
MG15Q
15Q6ES42
|
PDF
|
2SK210
Abstract: marking ADMI
Text: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure
|
OCR Scan
|
2SK210
100MHz)
SC-59
100MHz
200i-----
2SK210
marking ADMI
|
PDF
|
OK304
Abstract: 2sc2216
Text: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
2SC2216
2SC2717
2SC2216,
45MHz)
2SC2717
SC-43
OK304
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SV232 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE 1 S V2 3 2 • High Capacitance Ratio : C2V / C25V = 10.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner. Unit in mm
|
OCR Scan
|
1SV232
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC5110 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
|
OCR Scan
|
2SC5110
SC-70
--j50
|
PDF
|
2SC2349
Abstract: No abstract text available
Text: TOSHIBA 2SC2349 TOSHIBA TRANSISTOR TV VHF OSCILLATOR APPLICATIONS. SILICON NPN EPITAXIAL PLANAR TYPE 2SC2349 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
|
OCR Scan
|
2SC2349
SO-43
100MHz
2SC2349
|
PDF
|
|
|
a1091 transistor
Abstract: a1091 R transistor 2SA1091 A1091 vqe 14 display transistor a1091 2SC2551
Text: 2SA1091 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 091 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS . 5.1 M AX. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS • • •
|
OCR Scan
|
2SA1091
--300V,
--300V
2SC2551.
a1091 transistor
a1091 R transistor
2SA1091
A1091
vqe 14 display
transistor a1091
2SC2551
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GT20J311 TOSHIBA TENTATIVE TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT GT20J311 HIGH P O W ER SWITCHING APPLICATIONS M OTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : t f = 0.30/iS Max. Low Saturation Voltage : V q e ( s a t ) = 2.7V (Max.)
|
OCR Scan
|
GT20J311
30/iS
|
PDF
|
2SA562TM
Abstract: 2SC1959
Text: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA
|
OCR Scan
|
2SA562TM
-400mA
2SC1959.
2SA562TM
2SC1959
|
PDF
|
transistor 2SB673
Abstract: 2SB673 2SB675 2SD635 transistor 2SB673 equivalent transistor Toshiba transistor NPN Ic 50A 2SD633 AC75
Text: TOSHIBA 2SD633,2SD635 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD633, 2SD635 HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • High DC Current Gain : hjPE = 2000 Min. • Low Saturation Voltage :
|
OCR Scan
|
2SD633
2SD635
2SD633,
2SB673
2SB675.
transistor 2SB673
2SB675
2SD635
transistor 2SB673 equivalent transistor
Toshiba transistor NPN Ic 50A
AC75
|
PDF
|
MIG25Q806H
Abstract: MIG25Q806HA
Text: TOSHIBA MIG25Q806H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG25Q806H, MIG25Q806HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter Power Circuits and Thermistor in One Package.
|
OCR Scan
|
MIG25Q806H/HA
MIG25Q806H,
MIG25Q806HA
MIG25Q806H
2-108E5A
2-108E6A
961001EAA2
MIG25Q806H
MIG25Q806HA
|
PDF
|
2SA1382
Abstract: A1382
Text: 2SA1382 TOSHIBA 2 S A 1 382 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE Unit in mm POWER AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 5.1 MAX High DC Current Gain : hFE = 150-400 Iç; = —0.5A Low Saturation Voltage : VcE(sat) = -0.5V (MAX.) (IC = - 1A)
|
OCR Scan
|
2SA1382
75MAX
2SA1382
A1382
|
PDF
|
MG100J1BS11
Abstract: c40f
Text: MG100J1BS11 TOSHIBA TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT MG 100J1B S 1 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • High Input Impednace H ighspeed : tf=1.0/«s Max. (l£ = 100A) Low Saturation Voltage : V cE(sat) = 2-?V (Max.) (IC = 100A)
|
OCR Scan
|
MG100J1BS11
2-33F1A
MG100J1BS11
c40f
|
PDF
|
2SC5386
Abstract: 2-16E3A 2sc538
Text: TOSHIBA 2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS • • • • LD 15.5 ± 0.5 r- _ . O '* High Voltage
|
OCR Scan
|
2SC5386
2SC5386
2-16E3A
2sc538
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.)
|
OCR Scan
|
1SS344
1500S344
61001EA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2033 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE i <; ic ? n 3 3 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage Excellent Switching Times • • Small Package.
|
OCR Scan
|
2SK2033
|
PDF
|