Untitled
Abstract: No abstract text available
Text: MMA004AA 6-18GHz, 21dB Gain, 1.5dB NF Low Noise Amplifier Features • 16dBm PSAT with 1.5dB NF and 21.5dB gain typical from 6-18GHz • Gain flatness < +/-0.5dB • Input and Output matched to 50Ω • Self biased for simple biasing, small solution size and ease of manufacture
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MMA004AA
6-18GHz,
16dBm
6-18GHz
24dBm
MM-PDS-0005
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CHA6517
Abstract: fop 630
Text: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,
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CHA6517
6-18GHz
CHA6517
18GHz
DSCHA65179250
fop 630
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CHA3514
Abstract: No abstract text available
Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the
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CHA3514
6-18GHz
CHA3514
6-18GHz
19dBm
190mA
DSCHA3514-8144
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Untitled
Abstract: No abstract text available
Text: SPA-180-36-005-SMA DATA SHEET 6 GHz to 18 GHz, Medium Power Broadband Amplifier with 500 mW, 36 dB Gain and SMA SPA-180-36-005-SMA is a 27 dBm power amplifier designed for operation in the 6 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that
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SPA-180-36-005-SMA
SPA-180-36-005-SMA
15Volts,
800mA)
-broadband-amplifier-spa-180-36-005-sma-p
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Untitled
Abstract: No abstract text available
Text: SLNA-180-38-25-SMA DATA SHEET 2.5 dB NF, 6 GHz to 18 GHz, Low Noise Broadband Amplifier with 22 dBm, 38 dB Gain, 30 dBm IP3 and SMA SLNA-180-38-25-SMA is a Broadband High Gain GaAs PHEMT MMIC-based coaxial Low Noise Amplifier, operating in the 6 to 18 GHz frequency range. The amplifier
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SLNA-180-38-25-SMA
SLNA-180-38-25-SMA
12Volts,
-broadband-amplifier-slna-180-38-25-sma-p
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DPS-0618-360-6-5
Abstract: No abstract text available
Text: MAST - MICROWAVE ASSEMBLIES, SYSTEMS & TECHNOLOGIES 100 Davids Drive, Hauppauge, NY 11788 Tel: 631 436-7400 FAX: (631) 436-9219 Digital Phase Shifter MODEL: DPS-0618-360-6-5.6 Features Frequency ………Main Band.7.0-14.0GHz Stretch Band 6-18GHz Insertion Loss:
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DPS-0618-360-6-5
6-18GHz
0-14GHz
40dBm
35dBm
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CHA3514
Abstract: digital attenuator 544
Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the
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CHA3514
6-18GHz
CHA3514
6-18GHz
19dBm
190mA
DSCHA3514-8144
digital attenuator 544
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HBM W50
Abstract: AMMC-6408
Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6408 AMMC-6408 6-18 GHz 1W Power Amplifier Description AMMC-6408 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands
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AMMC-6408
AMMC-6408
18GHz.
6-18GHz
38dBm
Wirel38
17GHz
AMMC-6408-W10
HBM W50
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CHP4511
Abstract: digital phase shift DC 6GHz
Text: CHP4511 RoHS COMPLIANT 6-18GHz Phase-shifter GaAs Monolithic Microwave IC _ A Description The CHP4511 is a 4-bit digital phaseshifter with an output single pole double through SPDT switch. It is designed for 6 to 18GHz frequency range applications. The backside of the chip is both RF and
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CHP4511
6-18GHz
CHP4511
18GHz
6-18GHz
22dBm
DSCHP45110197
digital phase shift DC 6GHz
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Untitled
Abstract: No abstract text available
Text: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed
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CHA3512
6-18GHz
CHA3512
6-18GHz
23dBm
DSCHA3512-8144
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Untitled
Abstract: No abstract text available
Text: 6 GHz to 18 GHz, Log Amplifier, 25 mV/dB Log Slope, 70 dBm Log Range, SMA TECHNICAL DATA SHEET PE15A2002 The PE15A2002 is a SDLVA Successive Detection Logarithmic Video Amplifier designed to operate over the 6 GHz to 18 GHz Frequency Range. The SDLVA is designed for ultra high speed applications while maintaining flatness and accuracy
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PE15A2002
PE15A2002
MIL-STD-202F
amplifier-25-mv-db-70-dbm-sma-pe15a2002-p
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marconi
Abstract: NN12 P35-5131-000-200 MARCONI power
Text: P35-5131-000-200 GaAs MMIC POWER AMPLIFIER, 6-18GHz Simulated Electrical Parameters Parameters Small Signal Gain Gain Flatness Input Return Loss Output Return Loss Saturated Output Power Power Added Efficiency PAE Total circuit current Supply Voltage; Vdd
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P35-5131-000-200
6-18GHz
18GHz
marconi
NN12
P35-5131-000-200
MARCONI power
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CHA3512
Abstract: No abstract text available
Text: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed
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CHA3512
6-18GHz
CHA3512
6-18GHz
23dBm
DSCHA3512-8144
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6Ghz phase shifter
Abstract: CHP4511 digital phase shift DC 6GHz
Text: CHP4511 RoHS COMPLIANT 6-18GHz Phase-shifter GaAs Monolithic Microwave IC _ A Description The CHP4511 is a 4-bit digital phaseshifter with an output single pole double through SPDT switch. It is designed for 6 to 18GHz frequency range applications. The backside of the chip is both RF and
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CHP4511
6-18GHz
CHP4511
18GHz
6-18GHz
22dBm
DSCHP45116216
6Ghz phase shifter
digital phase shift DC 6GHz
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TGA1342-SCC
Abstract: No abstract text available
Text: Product Data Sheet 2-20 GHz Wideband AGC Amplifier TGA1342-SCC July 1, 2001 Key Features and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA Dimensions 3.4 x 2.0 x 0.1 mm
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TGA1342-SCC
TGA1342-SCC
120um
0007-inch
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CHA3514
Abstract: No abstract text available
Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the
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CHA3514
6-18GHz
CHA3514
6-18GHz
19dBm
190mA
DSCHA3514-8144
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DA-26-4
Abstract: DA-618-4
Text: MODEL DA-26-4, DA-618-4 2-18 GHz, Digital Attenuators TECHNICAL BULLETIN Description Two models are provided, to cover the frequency range of 2-18 GHz, in two bands: 2-6GHz Model DA-26-4 and 6-18Ghz Model DA-618-4). Both models are 4-bit digitally controlled, with a
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DA-26-4,
DA-618-4
DA-26-4)
6-18Ghz
DA-618-4)
DA-26-4
DA-26-4
DA-618-4
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CHP4511
Abstract: digital phase shift DC 6GHz
Text: CHP4511 RoHS COMPLIANT 6-18GHz Phase-shifter GaAs Monolithic Microwave IC _ A Description The CHP4511 is a 4-bit digital phaseshifter with an output single pole double through SPDT switch. It is designed for 6 to 18GHz frequency range applications. The backside of the chip is both RF and
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CHP4511
6-18GHz
CHP4511
18GHz
6-18GHz
22dBm
DSCHP45116216
digital phase shift DC 6GHz
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capacitors 100pf
Abstract: 6-18ghz amplifier 18GHz MIL-HDBK-263 FMA3006
Text: FMA3006 Preliminary Datasheet v2.1 6-18 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Broadband cascadable gain block 21 dBm P1dB Output Power at 5.0V On Chip DC blocking Capacitors PHEMT technology AGC control with gate bias
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FMA3006
FMA3006
6-18GHz
15dBm.
22A114.
MIL-STD-1686
MIL-HDBK-263.
capacitors 100pf
6-18ghz amplifier
18GHz
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: CHA3511 RoHS COMPLIANT 6-18GHz Amplifier GaAs Monolithic Microwave IC Description The CHA3511 is composed of a Single Pole Single Through SPST switch followed by a double stage travelling wave amplifier. It is designed for defence, naval, or avionic applications. The backside of the chip is
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CHA3511
6-18GHz
CHA3511
6-18GHz
DSCHA35110197
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NEC71000
Abstract: NEC710 MWT-7
Text: TECHNICAL NOTE DEV101 M ic r o W a v e T echno lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for low-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier
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DEV101
NEC710
NEC71000.
NEC71000
6-18GHz
MWT-7
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Untitled
Abstract: No abstract text available
Text: 0L-MD1 -VPM S-SS-001 REVISONS ADAPTER P/N ECO NO. MD1 -VPMS-SS-001 COMPONENT CDNTACTi DESOBPTION LTR A DATE u n tasto INITIAL RELEASE FINISH MATERIAL G E O PLATE PER ASTM B 488, TYPE 1, GRADE C, .000050 TD ,000100 THICK OVER NICKEL PER AMS QD-N-290 DR AMS 2404
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S-SS-001
-VPMS-SS-001
C17300
C172000
QD-N-290
DC-65
618-gQOO
IX9CL06ED
M1ER00NNECTS.
12/12/D3
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Untitled
Abstract: No abstract text available
Text: Attenuators SMA - Lossy Line Type 18GHz Performance S p ecifica tio n s: Frequency Range: i -18GHz 3-18GH z 5-18GHz 6-18GHz Attenuation Values: i-4 d B 5-9dB io-i 5dB i 6-2 0 dB Max Deviation from Nominal: + 0.5 dB or 5% whichever is greater Impedance: so Ohms
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18GHz
-18GHz
3-18GH
5-18GHz
6-18GHz
1-18GHZ
3-18GHz
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hp dwt-18674
Abstract: No abstract text available
Text: HP/Avantek 6-18GHz Amplifier Replacements DWT-18600’s Series Guaranteed @ +25 C H P /A v a n te k 6 -1 8 G H z A m p lifie r R e p la c e m e n ts w ith o u t T e m p e r a tu r e C o m p e n sa tio n DBS Model Number Frequency Response GHz Min. Gain (dB)
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6-18GHz
DWT-18600â
20dBm
30dBm
hp dwt-18674
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