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    NEC71000

    Abstract: NEC710 MWT-7
    Text: TECHNICAL NOTE DEV101 M ic r o W a v e T echno lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for low-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier


    OCR Scan     		DEV101 NEC710 NEC71000. NEC71000 6-18GHz MWT-7 PDF

    NEC710

    Abstract: NEC71000 DEV101 REF12 MWT-7 MWT-7 MICROWAVE
    Text: TECHNICAL NOTE DEV101 M ic r o W a v e T e c h n o lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for iow-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier


    OCR Scan     		DEV101 NEC710 NEC71000. NEC71000 0000GHz 5000GHz 000GHz 000GHz 6-18GHz REF12 MWT-7 MWT-7 MICROWAVE PDF