65764
Abstract: MATRA MHS HM* 28 pins SOIC pack
Text: HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.
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8192x8
65764
MATRA MHS HM* 28 pins SOIC pack
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F 10 L 600
Abstract: DIL 330 65764 z1015
Text: L 65764 MATRA MHS 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 × 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip
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SMD-5962-38294
Abstract: No abstract text available
Text: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active
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SMD5962
SMD-5962-38294
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EC3H03B
Abstract: No abstract text available
Text: Ordering number : ENN6576 EC3H03B NPN Epitaxial Planar Type Silicon Transistor EC3H03B VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications Features 0.35 0.2 0.25 [EC3H03B] 0.15 0.15 0.05 1 2 3 0.5 1.0 0.4 0.65 • 0.05 • unit : mm 2183 0.25 •
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ENN6576
EC3H03B
EC3H03B]
S21e2
E-CSP1006-3
EC3H03B
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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MATRA
Abstract: No abstract text available
Text: Te m ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum power consumption of only 743 mW.
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8192x8
MATRA
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65764 ram
Abstract: No abstract text available
Text: Tem ic L 65764 Semi co n du ct o rs 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Description The L 65764 is a high speed CMOS static RAM organized
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Untitled
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s Ordering Information High-Speed, Low-Power, General-Purpose Memories Package HM1 Device 65764 Grade H Level - 5R i D evice type 0 1 3 4 T = TP= U = C = _ 2 CM O S STA N D ARD B - High speed - low pow er C - R elaxed version
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1202z
Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883
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5962-3829409MXA
5962-3829409MYC
5962-3829409MZA
5962-3829411MXA
5962-382941IMYC
2-3H29411MZA
5962-3829413MX
5962-3829413MYC
5962-3829413MZA
5962-3829415MYC
1202z
MR80C31
J65608
8kx8 sram
LCC48
128KX8 SRAM
5962-8506401MQA
C965608
5962-89X
MR-80C3
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Untitled
Abstract: No abstract text available
Text: March 1994 DATA SHEET_ HM 65764 8 Kx 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE
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8192x8
65764/Rev
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Untitled
Abstract: No abstract text available
Text: 41E D S ñ b ñ 4Sb GQDS107 3Ö7 • MMHS January 1991 MATRA M H S HM 65764 HI-REL DATA SHEET 8 kx 8 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME : 25*/35/45/55 ns 300 AND 600 MILS WIDTH PACKAGE . LOW POWER CONSUMPTION ACTIVE : 380 mW typ STANDBY : 110 mW (typ)
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GQDS107
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Untitled
Abstract: No abstract text available
Text: 4TE 3> • Söbfl4Sb Ü O D im 474 H H MHS ^ 6 - Z 3 - / Z - nllll H w l l S B MATRA September 1990 M H S HM 65764 DATASHEET 8 k X8 HIGH SPEED CMOS SRAM FEATURES . ■ . . ■ FAST ACCESS TIME INDUSTRIAL/MILITARY : 35/45/55 ns max COMMERCIAL : 15*/20/25/35/45/55 ns (max)
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8192x8
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Untitled
Abstract: No abstract text available
Text: M l M A I S September 1989 HM 65764 DATASHEET 8 k X 8 HIGH SPEED CMOS SRAM FEATURES 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME
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110mW
-55CT0125C
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Untitled
Abstract: No abstract text available
Text: Tem ic L 65764 MATRA MHS 8 K X 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip
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1117hm
Abstract: SMD-5962-38294
Text: T em ic HM 65764 S emi co nd uc t or s 8K X 8 High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using
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8192x8
SMD5962-382941
1117hm
SMD-5962-38294
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Untitled
Abstract: No abstract text available
Text: electronic June 1992 HM 65764 HI-REL DATA SHEET 8 k X 8 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME : 25*/35/45/55 ns • 300 AND 600 MILS WIDTH PACKAGE , LOW POWER CONSUMPTION ACTIVE : 380 mW typ STANDBY: 110 mW(typ) . TTL COMPATIBLE INPUTS AND OUTPUTS
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cloc16
GDGM23fl
Sflbfl45b
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Untitled
Abstract: No abstract text available
Text: IlM l DATA SHEET_ HM 65764 8 Kx 8 HIGH SPEED CMOS SRAM FEATURES . . . . 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE . SINGLE 5 VOLT SUPPLY
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65764/Rev
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Untitled
Abstract: No abstract text available
Text: IIMII HM 65764 DATA SHEET_ KX 8 HIGH SPEED CMOS SRAM 8 FEATURES « FAST ACCESS TIME COMMERCIAL : 15/20/25/35/45/55 ns max INDUSTRIAL/MILITARY : 20/25/35/45/55 ns (max) • LOW POWER CONSUMPTION ACTIVE: 380 mWftyp) STANDBY : 110 mW (typ) . WIDE TEMPERATURE RANGE:
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8192x8
65764/Rev
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Untitled
Abstract: No abstract text available
Text: T em ic HM 65764 MATRA MHS 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum
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8192x8
b04Sb
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dda 009
Abstract: No abstract text available
Text: Temic L 65764 S e m ic o n d u c t o r s 8 K X 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip
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D074DÃ
dda 009
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Untitled
Abstract: No abstract text available
Text: T e m ic MATRA MHS_HM 65764 8K x 8 High Speed CMOS SRAM Description The HM 65764 is a high speed CMOS static RAM organized as 8192x8 bits. It is manufactured using MHS high performance CMOS technology. Access times as fast as 15 ns are available with maximum
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8192x8
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b2045
Abstract: No abstract text available
Text: • Bifurcated contacts provide redundant connection to p.c. board. • Uniform insertion and withdrawal forces. • Sight holes in cable cover allow for inspection after assembly. • Covers supplied in choice of closed-end to protect the exposed ends of the flat flexible cable or with
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305/HT
b2045
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B 58290
Abstract: 58550
Text: PRODUCT NO SEE TABLE OPTIONAL POLARIZING KEY P/N 67107 1. CONNECTORS ARE PACKED IN LOTS OF 100. A. OASH 054 THRU 061 ARE PACKAGED IN TUBES. B. DASH 154 AND 163 ARE PACKAGED IN TUBES. 2. MATERIAL: A. SUB-ASS'V: GLASS FILLED POLYESTER. FLAME RETARDANT PER UL-94V-0. COLOR: SEE TABLE.
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UL-94V-0.
CENTE070
B 58290
58550
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Burr Brown 3510am
Abstract: ner eN8 capacitor 3421J A5 GNC mosfet OPA103 OPA104 TF 6221 HEN LED display LOG100 3510CM Burr Brown OPA Application Reference
Text: BURR-BROWN Internatlenal Airport Industrial Park - P.0. Box 11400 - Tucson. Arizona B5734 Tel [602 746-1111 - TW X: 910-952-1111 - Cable: BBRCORP - Telex: 66-6491 PR O D U C T DATA BOOK The information in this publication has been carefully checked and is believed to be reliable; however, no responsibility is assumed for
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B5734
305/395-61C8
Burr Brown 3510am
ner eN8 capacitor
3421J
A5 GNC mosfet
OPA103
OPA104
TF 6221 HEN LED display
LOG100
3510CM
Burr Brown OPA Application Reference
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