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    Texas Instruments UC3865NG4

    IC OFFLINE SWITCH MULT TOP 16DIP
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    Texas Instruments SN74HC165NG4

    IC SHIFT REGISTER 8BIT 16-DIP
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    Texas Instruments SN74LS465NG4

    IC BUF NON-INVERT 5.25V 20DIP
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    Texas Instruments SN74HC365NG4

    IC BUFFER NON-INVERT 6V 16DIP
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    DigiKey SN74HC365NG4 Tube 1,075
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    STMicroelectronics STM32F765NGH7

    IC MCU 32BIT 1MB FLASH 216TFBGA
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    Mouser Electronics STM32F765NGH7 435
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    STMicroelectronics STM32F765NGH7 435 1
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    Avnet Silica STM32F765NGH7 1,760 16 Weeks 160
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    65NG Datasheets Context Search

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    58 65NG mosfet

    Abstract: 65NG 369D NTD5865NT4G
    Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 58 65NG mosfet 65NG 369D NTD5865NT4G

    Untitled

    Abstract: No abstract text available
    Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(on) MAX


    Original     		PDF NTD5865N NTD5865N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4865N NTD4865N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4965N NTD4965N/D

    58 65NG

    Abstract: No abstract text available
    Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 58 65NG

    65NG

    Abstract: 49 65NG 4965ng NTD4965N
    Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4965N NTD4965N/D 65NG 49 65NG 4965ng

    65NG

    Abstract: 48 65NG
    Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4865N NTD4865N/D 65NG 48 65NG

    65NG

    Abstract: 49 65NG 4965ng NTD4965NT4G
    Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4965N NTD4965N/D 65NG 49 65NG 4965ng NTD4965NT4G

    V68A

    Abstract: No abstract text available
    Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4965N NTD4965N/D V68A

    65NG

    Abstract: 48 65NG 369D
    Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4865N NTD4865N/D 65NG 48 65NG 369D

    65NG

    Abstract: 369D NTD4865NT4G
    Text: NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4865N NTD4865N/D 65NG 369D NTD4865NT4G

    49 65NG

    Abstract: 4965ng 65NG 4965n NTD4965N-35G NTD4965NT4G mosfet 126 NTD4965N 369D-01 369D
    Text: NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility


    Original     		PDF NTD4965N NTD4965N/D 49 65NG 4965ng 65NG 4965n NTD4965N-35G NTD4965NT4G mosfet 126 NTD4965N 369D-01 369D

    65NG

    Abstract: 58 65NG 48 65NG
    Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 65NG 58 65NG 48 65NG

    49 65NG

    Abstract: 65NG
    Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 49 65NG 65NG