Untitled
Abstract: No abstract text available
Text: 68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating 68B257AJ-8:185mA (Max.)
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OCR Scan
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KM68B257A
110mA
KM68B257AJ-8
185mA
KM68B257AJ-9
KM68B257AJ-10
175mA
KM68B257AJ-12
165mA
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PDF
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Untitled
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b?E D • T T h M l M S D G 17 bü l 754 « S P I C K 68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 9 , 1 0 , 12ns Max. • Low Power Dissipation
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OCR Scan
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KM68B257A
68B257AJ-8
68B257AJ-9
68B257AJ-10
KM68B257AJ-12
165mA
KM68B257A
144-bit
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PDF
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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OCR Scan
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KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY BiCMOS SRAM 68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 150mA
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OCR Scan
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KM68B257
195mA,
175mA,
150mA
68B257
44-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: BiCMOS SRAM 68B257A 32,768 W O R D x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating 68B257AJ-8: 185mA (Max.)
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OCR Scan
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KM68B257A
110mA
KM68B257AJ-8:
185mA
68B257AJ-9
KM68B257AJ-10
175mA
KM68B257AJ-12
165mA
KM68B257AJ:
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PDF
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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OCR Scan
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C1000BJ
KM44C256BP
KM41C1000BP
KM41C1001BP
KM44C256BJ
km4164
KM44C1000LJ
KM41C464Z
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PDF
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KM68B257
Abstract: No abstract text available
Text: PRELIMINARY BiCMOS SRAM 68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Tim e — Commercial: 10ns, 12ns, 15ns — 6ns O utput Enable tim e • Low Power Dissipation — Standby: 20mA — O perating: 195m A, 175m A, 150mA
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OCR Scan
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KM68B257
150mA
68B257
44-bit
KM68B257
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PDF
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