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    6N100 Search Results

    6N100 Result Highlights (4)

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    R5F72866N100FA#U2 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    R5F72866N100FP#U2 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    R5F72856N100FP#U2 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    10127397-06N1000LF Amphenol Communications Solutions PwrBlade® ULTRA Connector System, Power Connectors, Header, 2HP Right Angle, Through Hole Visit Amphenol Communications Solutions
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    6N100 Price and Stock

    Susumu Co Ltd RG3216N-1004-B-T5

    RES SMD 1M OHM 0.1% 1/4W 1206
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    DigiKey RG3216N-1004-B-T5 Cut Tape 5,225 1
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    Mouser Electronics RG3216N-1004-B-T5 3,684
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    Susumu Co Ltd RG3216N-1004-W-T1

    RES SMD 1M OHM 0.05% 1/4W 1206
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    Susumu Co Ltd RG3216N-1002-W-T1

    RES SMD 10K OHM 0.05% 1/4W 1206
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    DigiKey RG3216N-1002-W-T1 Digi-Reel 1,188 1
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    Littelfuse Inc IXFH26N100X

    MOSFET N-CH 1000V 26A TO247
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    DigiKey IXFH26N100X Tube 260 1
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    RS IXFH26N100X Bulk 8 Weeks 30
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    Littelfuse Inc IXTP6N100D2

    MOSFET N-CH 1000V 6A TO220AB
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    DigiKey IXTP6N100D2 Tube 183 1
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    Newark IXTP6N100D2 Bulk 290 1
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    6N100 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    6N100F IXYS Power MOSFETs Original PDF
    6N100W-1 Inmet ATTENUATOR Scan PDF
    6N100W-10 Inmet ATTENUATOR Scan PDF
    6N100W-10F Inmet ATTENUATOR Scan PDF
    6N100W-1M Inmet ATTENUATOR Scan PDF
    6N100W-20M Inmet ATTENUATOR Scan PDF
    6N100W-3 Inmet ATTENUATOR Scan PDF
    6N100W-30 Inmet ATTENUATOR Scan PDF
    6N100W-30F Inmet ATTENUATOR Scan PDF
    6N100W-3F Inmet ATTENUATOR Scan PDF
    6N100W-40F Inmet ATTENUATOR Scan PDF
    6N100W-6 Inmet ATTENUATOR Scan PDF
    6N100W-6M Inmet ATTENUATOR Scan PDF

    6N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM


    Original     		6N100Q 6N100Q O-247 O-268 O-268AA PDF

    6N100Q

    Abstract: IXFT6N100Q
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		6N100Q TAB72 O-268 IXFT6N100Q PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25


    Original     		6N100Q 6N100Q O-247 O-268 O-268 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		6N100Q O-247 O-268 PDF

    6N90

    Abstract: N100
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM


    Original     		6N100 O-247 O-204 10Source 100ms 6N100 6N90 N100 PDF

    6N90

    Abstract: IXFH6N100
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM


    Original     		6N100 O-247 O-204 6N100 10Source 6N90 IXFH6N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM


    Original     		6N100Q 6N100Q O-247 O-268 Sour100 O-268AA PDF

    6N90

    Abstract: N100 6n10 6n100
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 6 A IDM T C = 25°C, pulse width limited by T JM


    Original     		6N100 O-247 O-204 6N90 N100 6n10 6n100 PDF

    6N100F

    Abstract: transistor ixfh application note 125OC ixfh6n100f
    Text: Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		6N100F O-247 125oC 728B1 transistor ixfh application note 125OC ixfh6n100f PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM


    Original     		6N100 O-247 O-204 10Source 100ms 6N100 PDF

    6N100F

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH)


    Original     		6N100F O-247 PDF

    MOSFET 6N100

    Abstract: 6n90 equivalent 6N90 transistor ixfh application note D-68623
    Text: IXFH 6N90 IXFM 6N90 IXFH 6N100 IXFM 6N100 VDSS HiPerFETTM Power MOSFET IXFH/FM 6N90 900 V IXFH/FM 6N100 1000 V ID25 RDS on trr 1.8 Ω 250 ns 2.0 Ω 250 ns 6A 6A N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions


    Original     		6N100 6N100 O-247 D-68623 MOSFET 6N100 6n90 equivalent 6N90 transistor ixfh application note PDF

    Untitled

    Abstract: No abstract text available
    Text: ATTENUATORS Type N, up to 6 GHz, 100 Watts SPECIFICATIONS: Models: XN100W-XX, XN100W-XXF & XN100W-XXM Electrical: Frequency Range Standard Freq. Values Standard dB Values Attenuation Accuracy 3 & 6 dB 10 dB 20 & 30 dB 40 dB VSWR Max. DC - 1.5 GHz ±0.50 dB


    Original     		XN100W-XX, XN100W-XXF XN100W-XXM 2N100W-03F 6N100W-20FM XN100W-XXY XN100W-ATT: PDF

    BNC 7044

    Abstract: mini Audio 5709 7043 BNC INMET 64671 26AH TN180-50W 5205/AU attenuation 3dB DC 18GHz BNC Matching T CA 5210 PL F/5057
    Text: Short Form Catalog Microwave, Wireless and Broadband Components www.aeroflex-inmet.com Attenuators Adapters Bias Tees DC Blocks Gain Equalizers Terminations Table of Contents Company Profile . Attenuators .


    Original     		PDF

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E PDF

    IXFH6N100Q

    Abstract: No abstract text available
    Text: DIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Voss V oo „ DS on Test Conditions Maximum Ratings T j =25°C to150°C 1000 V T j = 25°C to 150°C; Ros = 1 M fl 1000 V Continuous ±20 V V os« Transient ±30


    OCR Scan     		6N100Q to150 O-247 O-268 IXFH6N100Q PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS


    OCR Scan     		6N100E/D MTW6N100E 340K-01 PDF

    h6n100

    Abstract: h6n90
    Text: n ix Y S HiPerFET Power MOSFETs IXFH /IXFM 6N90 IXFH / IXFM 6N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 900 V 1000 V 6A 6A p DS on 1.8 Q 2.0 £2 yo 69 Symbol Test Conditions Maximum Ratings v DSS T j =25°C to 150°C


    OCR Scan     		6N100 6N100 IXFH6N100 IXFM6N100 h6n100 h6n90 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    1N100W-1

    Abstract: 3N100W-3F 6N100W-20M
    Text: ATTENUATORS up to 6 GHz TYPE N 100 Watts MODELS: XN1 OOW -XX, XN 100W -X X F & IN M E T X N 100W -XXM SPECIFICATIONS: Electrical: Frequency Range _DC - 6.0 GHz Standard Freq. Values _1.5, 3 & 6 GHz Standard dB Values_ _1,3, 6, 10, 20, 30 & 40* dB


    OCR Scan     		MIL-STD-o48 1N100W-1 3N100W-3F 6N100W-20M XN100W-ATT; PDF

    6N100E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r T O -2 4 7 W ith Is o la te d M ounting H ole TMOS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n


    OCR Scan     		PDF

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS PDF

    Untitled

    Abstract: No abstract text available
    Text: v DSS HiPerFET Power MOSFETs ix f h /ix f m g n m IXFH/IXFM 6 N100 Symbol Test Conditions v ^ Voa« Tj = 25°C to 150°C; Vos Continuous ±20 V Transient ±30 V 6 A vesM •» ' dm dv/dt Tc Maximum Ratings = 25“C to 150°C 1 f RGS=1 M£2J \ 6N90 900 V


    OCR Scan     		O-247 6N100 PDF

    dual diode TO254AA 600V

    Abstract: No abstract text available
    Text: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package


    OCR Scan     		1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V PDF