6N10 Search Results

6N10 Result Highlights (5)

Part	Manufacturer	Description
NP36N10SDE-E1-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
R5F72866N100FA#U2	Renesas Electronics Corporation	32-bit Microcontrollers
R5F72866N100FP#U2	Renesas Electronics Corporation	32-bit Microcontrollers
R5F72856N100FP#U2	Renesas Electronics Corporation	32-bit Microcontrollers
NP36N10SDE-E2-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive

6N10 Price and Stock

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Laird, A DuPont Business HI1206N101R-10 FERRITE BEAD 100 OHM 1206 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HI1206N101R-10	Reel	181,700		3,000	1 - 10 - 100 - 1000 - 10000 $0.06625	Buy Now
Newark	HI1206N101R-10	Cut Tape	47,059		10	1 - 10 $0.162 100 $0.105 1000 $0.105 10000 $0.105	Buy Now
	HI1206N101R-10	Reel	12,000		3,000	1 $0.078 10 $0.078 100 $0.078 1000 $0.078 10000 $0.076	Buy Now
Bristol Electronics	HI1206N101R-10		6,834			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	HI1206N101R-10		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	HI1206N101R-10		130		17	1 - 10 - 100 $0.15 1000 $0.15 10000 $0.15	Buy Now
	HI1206N101R-10		76			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	HI1206N101R-10		111,000		1	1 - 10 - 100 - 1000 - 10000 $0.0573	Buy Now
onsemi NTMTS1D6N10MCTXG SINGLE N-CHANNEL POWER MOSFET 10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTMTS1D6N10MCTXG	Cut Tape	2,873		1	1 $11.44 10 $7.832 100 $5.8296 1000 $5.48512 10000 $5.48512	Buy Now
	NTMTS1D6N10MCTXG	Digi-Reel	2,873		1	1 $11.44 10 $7.832 100 $5.8296 1000 $5.48512 10000 $5.48512	Buy Now
Newark	NTMTS1D6N10MCTXG	Cut Tape	2,980		1	1 $10.97 10 $9.91 100 $7.83 1000 $5.99 10000 $5.99	Buy Now
Bristol Electronics	NTMTS1D6N10MCTXG		1,367			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	NTMTS1D6N10MCTXG		7,533		1	1 $6.09 10 $6.09 100 $5.72 1000 $5.18 10000 $5.18	Buy Now
Richardson RFPD	NTMTS1D6N10MCTXG				3,000	1 - 10 - 100 - 1000 - 10000 $5.49	Buy Now

Avnet Silica	NTMTS1D6N10MCTXG			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTMTS1D6N10MCTXG		11,704			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TDK Electronics B65816N1012D001 BOBBIN COIL FORMER RM 12
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B65816N1012D001	Box	2,519		1	1 $2.14 10 $1.476 100 $0.9709 1000 $0.86573 10000 $0.86573	Buy Now
Newark	B65816N1012D001	Bulk	16		1	1 $2.2 10 $1.52 100 $1 1000 $0.911 10000 $0.911	Buy Now
Infineon Technologies AG IPF016N10NF2SATMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPF016N10NF2SATMA1	Digi-Reel	1,226		1	1 $5.82 10 $3.9 100 $5.82 1000 $5.82 10000 $5.82	Buy Now
	IPF016N10NF2SATMA1	Cut Tape	1,226		1	1 $5.82 10 $3.9 100 $5.82 1000 $5.82 10000 $5.82	Buy Now
	IPF016N10NF2SATMA1	Reel	800		800	1 - 10 - 100 - 1000 $2.33888 10000 $2.33888	Buy Now
Mouser Electronics	IPF016N10NF2SATMA1		667			1 $5.34 10 $3.66 100 $2.69 1000 $2.33 10000 $2.33	Buy Now
EBV Elektronik	IPF016N10NF2SATMA1			13 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Susumu Co Ltd RG3216N-1002-W-T1 RES SMD 10K OHM 0.05% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG3216N-1002-W-T1	Digi-Reel	1,188		1	1 $1.29 10 $0.903 100 $0.6097 1000 $0.44808 10000 $0.44808	Buy Now
	RG3216N-1002-W-T1	Cut Tape	1,188		1	1 $1.28 10 $0.894 100 $0.604 1000 $0.44392 10000 $0.44392	Buy Now
	RG3216N-1002-W-T1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.43312 10000 $0.43312	Buy Now

Find more 6N10 price and stock on Findchips.com

6N10 Datasheets (33)

Part	Manufacturer	Description	Datasheet Type	PDF
6N-10	Inmet	ATTENUATOR	Scan	PDF
6N100F	IXYS	Power MOSFETs	Original	PDF
6N100W-1	Inmet	ATTENUATOR	Scan	PDF
6N100W-10	Inmet	ATTENUATOR	Scan	PDF
6N100W-10F	Inmet	ATTENUATOR	Scan	PDF
6N100W-1M	Inmet	ATTENUATOR	Scan	PDF
6N100W-20M	Inmet	ATTENUATOR	Scan	PDF
6N100W-3	Inmet	ATTENUATOR	Scan	PDF
6N100W-30	Inmet	ATTENUATOR	Scan	PDF
6N100W-30F	Inmet	ATTENUATOR	Scan	PDF
6N100W-3F	Inmet	ATTENUATOR	Scan	PDF
6N100W-40F	Inmet	ATTENUATOR	Scan	PDF
6N100W-6	Inmet	ATTENUATOR	Scan	PDF
6N100W-6M	Inmet	ATTENUATOR	Scan	PDF

6N-10M	Inmet	ATTENUATOR	Scan	PDF
6N10W-00	Inmet	ATTENUATOR	Scan	PDF
6N10W-00F	Inmet	ATTENUATOR	Scan	PDF
6N10W-03	Inmet	ATTENUATOR	Scan	PDF
6N10W-03F	Inmet	ATTENUATOR	Scan	PDF
6N10W-04	Inmet	ATTENUATOR	Scan	PDF

6N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 6N10Z Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N10Z is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.	Original	6N10Z 6N10Z 6N10ZL-TN3-R 6N10ZG-TN3-R O-252 QW-R502-920	PDF
V/AA3R Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.	Original	OT-223 O-252 6N10L-TN3-T 6N10G-TN3-T 6N10L-TN3-R 6N10G-TN3-R 6N10L-AA3-R 6N10G-AA3-R QW-R502-486 V/AA3R	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM	Original	6N100Q 6N100Q O-247 O-268 O-268AA	PDF
6N100Q Abstract: IXFT6N100Q Text: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	6N100Q TAB72 O-268 IXFT6N100Q	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25	Original	6N100Q 6N100Q O-247 O-268 O-268	PDF
6N10G-AA3-R Abstract: 6n10g Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.	Original	OT-223 O-252 O-252 OT-223 6N10L-TN3-R 6N10G-TN3-R QW-R502-486 6N10G-AA3-R 6n10g	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.	Original	O-252 O-252D OT-223 6N10G-AA3-R 6N10L-TN3-R 6N10G-TN3-R 6N10L-TND-R 6N10G-TND-R QW-R502-486	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	6N100Q O-247 O-268	PDF
6N90 Abstract: N100 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	6N100 O-247 O-204 10Source 100ms 6N100 6N90 N100	PDF
6N90 Abstract: IXFH6N100 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	6N100 O-247 O-204 6N100 10Source 6N90 IXFH6N100	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM	Original	6N100Q 6N100Q O-247 O-268 Sour100 O-268AA	PDF
6N90 Abstract: N100 6n10 6n100 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 6 A IDM T C = 25°C, pulse width limited by T JM	Original	6N100 O-247 O-204 6N90 N100 6n10 6n100	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION SOT-223 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.	Original	OT-223 O-252 6N10L-TN3-T 6N10G-TN3-T 6N10L-TN3-R 6N10G-TN3-R 6N10L-AA3-R 6N10G-AA3-R QW-R502-486.	PDF
6N100F Abstract: transistor ixfh application note 125OC ixfh6n100f Text: Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings	Original	6N100F O-247 125oC 728B1 transistor ixfh application note 125OC ixfh6n100f	PDF

6n10 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Preliminary Power MOSFET 6 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.	Original	O-252 O-252 6N10L-TN3-R 6N10G-TN3-R QW-R502-486 6n10	PDF
6N100F Abstract: No abstract text available Text: Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 6N100F VDSS IXFT 6N100F ID25 RDS on = 1000 V = 6A = 1.9 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH)	Original	6N100F O-247	PDF
MOSFET 6N100 Abstract: 6n90 equivalent 6N90 transistor ixfh application note D-68623 Text: IXFH 6N90 IXFM 6N90 IXFH 6N100 IXFM 6N100 VDSS HiPerFETTM Power MOSFET IXFH/FM 6N90 900 V IXFH/FM 6N100 1000 V ID25 RDS on trr 1.8 Ω 250 ns 2.0 Ω 250 ns 6A 6A N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions	Original	6N100 6N100 O-247 D-68623 MOSFET 6N100 6n90 equivalent 6N90 transistor ixfh application note	PDF
n type connector male Abstract: 18N10W-20 6N10W-06F Text: ATTENUATORS Type N, up to 18 GHz, 10 Watts SPECIFICATIONS: Models: XXN10W-XX, XXN10W-XXF & XXN10W-XXM Electrical: DC - 18 GHz 6, & 18 GHz 0 - 10, 12, 20, 30 & 40 dB Frequency Range Standard Freq. Values Standard dB Values* In 1 dB Increments Attenuation Accuracy	Original	XXN10W-XX, XXN10W-XXF XXN10W-XXM XXN10W-XXY 18N10W-20 6N10W-06F N10W-03M XXN10W-ATT: n type connector male 18N10W-20 6N10W-06F	PDF
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 1000 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1000 V V GS Continuous ±20 V V GSM Transient	OCR Scan	6N100Q O-268	PDF
6N60E Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218	OCR Scan	O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E	PDF
IXFH6N100Q Abstract: No abstract text available Text: DIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Q Class IXFH 6N100Q IXFT 6N100Q Voss V oo „ DS on Test Conditions Maximum Ratings T j =25°C to150°C 1000 V T j = 25°C to 150°C; Ros = 1 M fl 1000 V Continuous ±20 V V os« Transient ±30	OCR Scan	6N100Q to150 O-247 O-268 IXFH6N100Q	PDF
D6N0502 Abstract: D6N102-3 Si1023 D6N1023 D6N101 3-24VDC Text: U ^ A d c Ü ^ D ( D V D C 'J U - d c £ i D 6N 0 5 0 2 D 6N102-3 6N101 « m » n m a* NO. iUl i L - - C SA : - TÜ V - : • * m \ n D6N0502 D 6N I0 2 -3 D6NI0I M íé V dc 90 120 180 V dc i II 2.0 2.0 LO A dc 2 II 1 .2 1 .2 1 .0 A dc S ai	OCR Scan	D6N0502 D6N102-3 D6N101 D6N0502, D6N101 D6N0502 D6NI02-3 DC500Vy -201C 500UT D6N102-3 Si1023 D6N1023 3-24VDC	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS	OCR Scan	6N100E/D MTW6N100E 340K-01	PDF
h6n100 Abstract: h6n90 Text: n ix Y S HiPerFET Power MOSFETs IXFH /IXFM 6N90 IXFH / IXFM 6N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family V DSS ^D25 900 V 1000 V 6A 6A p DS on 1.8 Q 2.0 £2 yo 69 Symbol Test Conditions Maximum Ratings v DSS T j =25°C to 150°C	OCR Scan	6N100 6N100 IXFH6N100 IXFM6N100 h6n100 h6n90	PDF

6N10 Search Results

6N10 Result Highlights (5)

6N10 Price and Stock

Laird, A DuPont Business HI1206N101R-10

onsemi NTMTS1D6N10MCTXG

TDK Electronics B65816N1012D001

Infineon Technologies AG IPF016N10NF2SATMA1

Susumu Co Ltd RG3216N-1002-W-T1

6N10 Datasheets (33)

6N10 Datasheets Context Search

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V/AA3R

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6N100Q

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6N10G-AA3-R

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6N90

6N90

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6N90

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6N100F

6n10

6N100F

MOSFET 6N100

n type connector male

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6N60E

IXFH6N100Q

D6N0502

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h6n100